MPSA194 [UTC]
PNP EPITAXIAL PLANAR TRANSISTOR; PNP外延平面晶体管
| 型号： | MPSA194 |
| 厂家： | 
Unisonic Technologies |
| 描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总1页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTCMPSA194
PNP EPITAXIAL PLANAR TRANSISTOR
PNP EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The MPSA194 is designed for high voltage low
power switching applications especially for use in
telephone and telecommunication circuits.
1
FEATURES
*Collector-Emitter Voltage:
VCEO=400V
*Power Dissipation: 1.0W
TO-92
APPLICATIONS
*Telephone circuit
*Telecommunication circuit
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation(Ta=25°C)
Collector current
SYMBOL
VCBO
VCEO
VEBO
Pc
Ic
Tj
TSTG
RATING
400
400
6
1.0
800
150
-55 ~ +150
UNIT
V
V
V
W
mA
°C
°C
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS(Tj=25°C,unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
SYMBOL
BVCBO
BVCEO
ICBO
TEST CONDITIONS
Ic=100µA,IE=0
MIN TYP MAX UNIT
400
400
V
Ic=1mA,IB=0
V
VCB=400V,IE=0
VCB=200V,VBE=0
VEB=6V,Ic=0
10
1
µA
µA
µA
Collector cut-off current
Emitter cut-off current
ICEO
IEBO
0.2
DC current gain(note)
hFE
VCE=10V,Ic=1mA
VCE=10V,Ic=20mA
VCE=10V,Ic=80mA
Ic=20mA,IB=2mA
Ic=80mA,IB=4mA
Ic=20mA,IB=2mA
VCE=20V,IE=10mA, f=1MHz
VCB=20V,IE=0, f=1MHz
50
50
40
800
Collector-emitter saturation voltage
VCE(sat)
0.2
1.2
0.9
V
Base-emitter saturation voltage
Current Gain Bandwidth Porduct
Output capacitance
VBE(sat)
fT
Cob
V
MHz
pF
10
30
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R201-026,A
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