UD2195 [UTC]

NPN EPITAXIAL PLANAR TRANSISTOR; NPN外延平面晶体管


型号：	UD2195
厂家：	Unisonic Technologies
描述：	NPN EPITAXIAL PLANAR TRANSISTOR NPN外延平面晶体管晶体晶体管局域网
文件：	总3页 (文件大小：145K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UD2195

Preliminary

NPN SILICON TRANSISTOR

NPN EPITAXIAL PLANAR

TRANSISTOR

DESCRIPTION

* The UTC UD2195 is designed for use in general purpose

amplifier and low speed switching application.

* Pb-free package process is adopted.

Lead-free:

UD2195L

Halogen-free: UD2195G

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOT-89

Packing

Normal

Lead Free

Halogen Free

UD2195-AB3-R

UD2195L-AB3-R

UD2195G-AB3-R

Tape Reel

www.unisonic.com.tw

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QW-R208-043.a

UD2195

Preliminary

NPN SILICON TRANSISTOR

EQUIVALENT CIRCUIT

UTC UD2195

8KΩ

120Ω

B: Base

C: Collector

E: Emitter

UNISONIC TECHNOLOGIES CO., LTD

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QW-R208-043.a

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UD2195

Preliminary

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (T_a=25°C)

PARAMETER

SYMBOL

V_CBO

RATINGS

UNIT

130

120

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

Collector Current

I_C

Pulse(Note 2)

Collector Dissipation

Junction Temperature

Storage Temperature

P_C

T_J

0.6

℃

150

T_STG

-55 ~ +150

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Note: 1 .Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Note: 2. Pulse test: Pulse Width≦350μs, Duty Cycle≦2%

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

208

UNIT

Junction-to-Ambient

θ_JA

℃/W

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

BV_CBO

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

I_C=100μA, I_E=0

130

BV_CEO

I_C=1mA, I_B=0

120

Base-Emitter Turn-On Voltage

Collector Cutoff Current

Emitter Cutoff Current

V_BE(ON)

I_CBO

I_CEO

I_EBO

V_CE=4V, I_C=2A

2.8

V_CB=100V, I_E=0

V_CE=50V, I_B=0

V_EB=5V, I_C=0

ON CHARACTERISTICS

V_CE=4V, I_C=1A

_CE=4V, I_C=2A

I_C=2A, I_B=2mA

1000

500

DC Current Gain (Note)

h_FE

Collector-Emitter Saturation Voltage

V_CE(SAT)

SMALL-SIGNAL CHARACTERISTICS

Output Capacitance

C_ob

V_CB=10V, I_E=0A, f=1MHz

200

Note: Pulse test: Pulse Width≦380μs, Duty Cycle≦2%

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R208-043.a

www.unisonic.com.tw

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