UD9926L-P08-R [UTC]

DUAL N-CHANNEL ENHANCEMENT MODE; 双N沟道增强模式
UD9926L-P08-R
型号: UD9926L-P08-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

DUAL N-CHANNEL ENHANCEMENT MODE
双N沟道增强模式

文件: 总5页 (文件大小:204K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
UD9926  
Power MOSFET  
DUAL N-CHANNEL  
ENHANCEMENT MODE  
SOP-8  
„
FEATURES  
* 20V/6A  
* Low RDS(ON)  
* Reliable and Rugged  
„
SYMBOL  
TSSOP-8  
Lead-free:  
UD9926L  
Halogen-free: UD9926G  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
UD9926L-S08-R  
UD9926L-P08-R  
Halogen Free  
1
2
3
4
5
6
7
8
UD9926-S08-R  
UD9926-P08-R  
UD9926G-S08-R  
SOP-8 S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel  
UD9926G-P08-R TSSOP-8 D1 S1 S1 G1 G2 S2 S2 D2 Tape Reel  
www.unisonic.com.tw  
Copyright © 2009 Unisonic Technologies Co., Ltd  
1 of 5  
QW-R502-143.B  
UD9926  
Power MOSFET  
„
PIN CONFIGURATION  
For SOP-8 Package  
For TSSOP-8 Package  
Drain1  
Drain2  
1
8
7
Source2  
2
Source1  
Source1  
Source2  
Gate2  
3
4
6
5
Gate1  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R502-143.B  
www.unisonic.com.tw  
UD9926  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
UNIT  
V
Drain Source Voltage  
Gate Source Voltage  
20  
±10  
V
Continuous(Note 3)  
Pulsed (Note 2)  
SOP-8  
6
A
Drain Current  
IDM  
20  
A
1.6  
W
W
°C  
°C  
Power Dissipation  
PD  
TSSOP-8  
1.0  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
TSTG  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
Surface Mounted on 1in 2 pad area, t10sec.  
2.  
3. Pulse width limited by TJ(MAX)  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
MIN  
TYP  
MAX  
80  
UNIT  
Junction to Ambient  
θJA  
°C /W  
„
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
ON CHARACTERISTICS  
BVDSS  
IDSS  
VGS=0V, ID=250uA  
VDS=16V, VGS=0V  
VDS=0V, VGS=±8V  
20  
V
1
uA  
IGSS  
±100 nA  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250uA  
VGS=4.5V, ID=6A  
VGS=2.5V, ID=5.2A  
0.5  
0.7  
28  
38  
1.5  
32  
45  
V
mΩ  
mΩ  
Drain-Source On-State Resistance (Note2)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
CISS  
COSS  
CRSS  
520  
110  
70  
pF  
pF  
pF  
VGS=0V,VDS=15V,f=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-ON Delay Time (Note)  
Turn-ON Rise Time  
tD(ON)  
tR  
tD(OFF)  
tF  
17  
15  
45  
25  
10  
3.6  
2
ns  
ns  
VDD=10V, VGS=4.5V, ID=1A,  
RG=0.2Ω  
Turn-OFF Delay Time  
ns  
Turn-OFF Fall Time  
ns  
Total Gate Charge (Note)  
Gate-Source Charge  
QG  
nC  
nC  
nC  
VDS=10V, VGS=-4.5V, ID=6A  
QGS  
QGD  
Gate-Drain Charge  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage(Note2)  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
IS=1.7A, VGS=0V  
0.6  
1.3  
2.5  
V
A
IS  
Note: Pulse width 300us, duty cycle 2%.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 5  
QW-R502-143.B  
www.unisonic.com.tw  
UD9926  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
Output Characteristics  
Transfer Characteristics  
20  
16  
20  
15  
VGS=2,3,4,5,6,7,8,9,10V  
1V  
12  
8
10  
5
0.5V  
TJ=25℃  
4
0
TJ=125℃  
TJ=55℃  
0
0.0  
0
4
5
1
2
3
1.5  
0.5  
1.0  
2.0  
2.5  
Drain-to-Source Voltage, VDS (V)  
Gate-to-Source Voltage, VGS (V)  
On-Resistance vs. Drain Current  
On-Resistance vs. Gate-to-Source Voltage  
0.12  
0.11  
0.10  
0.040  
0.035  
ID=6A  
0.09  
VGS=4.5V  
VGS=10V  
0.08  
0.07  
0.030  
0.025  
0.06  
0.05  
0.04  
0.020  
0.03  
0.02  
0.015  
0.010  
0.01  
0.00  
10  
0
1
2
3
4
5
6
7
8
9
0
5
10  
15  
20  
Gate-to-Source Voltage, VGS (V)  
Drain Current, ID (A)  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 5  
QW-R502-143.B  
www.unisonic.com.tw  
UD9926  
Power MOSFET  
„
TYPICAL CHARACTERISTICS(Cont.)  
Source-Drain Diode Forward Voltage  
Single Pulse Power  
20  
10  
80  
60  
40  
TJ=150℃  
TJ=25℃  
20  
0
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
0.01  
0.1  
1
10  
Source-to-Drain Voltage, VSD (V)  
Time (sec)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 5  
QW-R502-143.B  
www.unisonic.com.tw  

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