UF520L-TA3-T [UTC]
9.2A, 100V N-CHANNEL POWER MOSFET; 9.2A ， 100V N沟道功率MOSFET
| 型号： | UF520L-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 9.2A, 100V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF520
Preliminary
Power MOSFET
9.2A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UF520 is an N-channel enhancement power MOSFET
using UTC’s advanced technology to provide the customers with
high Input Impedance and high switching speed.
This UTC UF520 is suitable for motor drivers, switching
convertors, switching regulators, relay drivers and drivers for high
power bipolar switching transistors.
FEATURES
* RDS(ON)=0.25Ω @ VGS=10V,ID=5.6A
* High Input Impedance
* High Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-220
Packing
Tube
Lead Free
Halogen Free
UF520G-TA3-T
1
2
3
UF520L-TA3-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain
S: Source
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UF520
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
100
±20
VGSS
V
TC=25°C
9.2
A
Continuous
ID
Drain Current
TC=100°C
6.5
A
Pulsed (Note 2)
IDM
EAS
PD
37
A
Single Pulsed Avalanche Energy (Note 3)
Power Dissipation
36
mJ
W
°C
°C
50
Junction Temperature
TJ
+150
-55~+175
Storage Temperature
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve
3. VDD=25V, starting TJ=25°C, L=640mH, RG=25ꢀ, peak IAS=9.2A
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
80
θJC
2.5
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UF520
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
On State Drain Current (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
BVDSS
IDSS
ID=250µA, VGS=0V
100
V
250 µA
±100 nA
VDS=95V, VGS=0V
VGS=±20V, VDS=0V
IGSS
VGS(TH)
RDS(ON)
ID(ON)
VDS=VGS, ID=250µA
2.0
9.2
4.0
V
ꢀ
A
VGS=10V, ID=5.6A (Note 1)
VGS=10V, VDS>ID(ON)×RDS(ON)MAX
0.25 0.27
CISS
COSS
CRSS
350
130
25
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
10
2.5
2.5
9
30
nC
nC
nC
ns
ns
ns
ns
VGS=10V, ID=9.2A, VDS=0.8*Rated
Gate to Source Charge
Gate to Drain Charge
BVDSS, IG(REF)=1.5mA (Note 2)
Turn-ON Delay Time
13
63
70
59
Rise Time
VDD=50V, ID≈9.2A, RG=18ꢀ,
RL=5.5 ꢀ (Note 3)
30
18
20
Turn-OFF Delay Time
tD(OFF)
tF
Fall-Time
Notes: 1. Pulse test: pulse width≤300µs, duty cycle≤2%
2. Gate Charge is Essentially Independent of Operating Temperature
3. MOSFET Switching Times are Essentially Independent of Operating Temperature
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
VSD
TEST CONDITIONS
MIN TYP MAX UNIT
Source to Drain Diode Voltage
TJ=25°C,ISD=9.2A,VGS=0V (Note 1)
2.5
9.2
37
V
A
A
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 2)
ISD
Note 3
ISDM
Note : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance
curve
3. Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode.
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UF520
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
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UF520
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
Gate Pulse Period
VGS
D=
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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UF520
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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