UM6K1N [UTC]
SILICON N-CHANNEL MOSFET;
| 型号： | UM6K1N |
| 厂家： | 
Unisonic Technologies |
| 描述： | SILICON N-CHANNEL MOSFET |
| 文件： | 总4页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UM6K1N
Preliminary
Power MOSFET
SILICON N-CHANNEL
MOSFET
DESCRIPTION
The UTC UM6K1N is a silicon N-channel MOSFET. it uses
UTC’s advanced technology to provide the customers with a
minimum on state resistance, high switching speed and low gate
threshold voltage.
The UTC UM6K1N is suitable for switching and interfacing
applications.
FEATURES
* RDS(on)<8Ω @ VGS=4V, ID=10mA
DS(on)<13Ω @ VGS=2.5V, ID=1mA
R
* High switching speed
* Low gate threshold voltage
SYMBOL
D1
D2
G1
G2
S1
S2
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-363
Packing
Lead Free
Halogen Free
UM6K1NG-AL6-R
S: Source
1
2
3
4
5
6
UM6K1NL-AL6-R
S1 G1 D2 S2 G2 D1 Tape Reel
Note: Pin Assignment: G: Gate D: Drain
MARKING
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UM6K1N
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
VDSS
RATINGS
30
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
ID
±20
V
Continuous
100
mA
mA
mW
°C
Drain Current
Pulsed (Note 1)
TC=25°C
IDM
PD
200
Power Dissipation (Note 2)
Channel Temperature
150
TCH
TSTG
150
Storage Temperature Range
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pw≤10µs, Duty cycle≤50%.
3. With each pin mounted on the recommended lands.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=10µA, VGS=0V
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
30
V
1.0 µA
+1 µA
Forward
Reverse
Gate-Source Leakage Current
IGSS
VGS=-20V, VDS=0V
-1
µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
|YFS|
VDS=3V, ID=100µA
0.8
20
1.5
8
V
Ω
VGS=4V, ID=10mA
5
7
Static Drain-Source On-State Resistance
VGS=2.5V, ID=1mA
VDS=3V, ID=10mA
13
Ω
Forward Transfer Admittance
DYNAMIC PARAMETERS
Input Capacitance
mS
CISS
COSS
CRSS
13
9
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
VGS=0V, VDS=5V, f=1.0MHz
4
tD(ON)
tR
tD(OFF)
tF
15
35
80
80
ns
ns
ns
ns
VDD≈5V, VGS=5V, ID=10mA,
RGS=10Ω, RL=500Ω
Turn-OFF Delay Time
Fall-Time
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UM6K1N
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
RG
RD
VDS
VGS
10V
10%
VGS
DUT
tR
td(OFF)
td(ON)
tON
tF
tOFF
Resistive Switching Waveforms
Resistive Switching Test Circuit
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UM6K1N
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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