UM6K31N [UTC]

SILICON N-CHANNEL MOSFET TRANSISTOR; 硅N沟道MOSFET晶体管


型号：	UM6K31N
厂家：	Unisonic Technologies
描述：	SILICON N-CHANNEL MOSFET TRANSISTOR 硅N沟道MOSFET晶体管晶体晶体管
文件：	总3页 (文件大小：161K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UM6K31N

Preliminary

Power MOSFET

SILICON N-CHANNEL MOSFET

TRANSISTOR

DESCRIPTION

The UTC UM6K31N is a silicon N-channel MOS Field Effect

Transistor. It can be used in switching applications.

SOT-363

SYMBOL

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOT-363

Packing

Lead Free

Halogen Free

UM6K31NL-AL6-R

UM6K31NG-AL6-R

S1 G1 D2 S2 G2 D1 Tape Reel

Note: Pin Assignment: G: Gate D: Drain

S: Source

MARKING

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UM6K31N

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, it is the same rating for the Tr1 AND Tr2)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous

±250

±1

Drain Current Continuous

Pulsed (Note1)

Continuous

I_DP

I_S

125

Source Current Continuous (Body Diode)

Pulsed (Note1)

I_SP

Power Dissipation

P_D

150

°C

Channel Temperature

Strage Temperature

T_CH

T_STG

150

-55~150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL RESISTANCE

PARAMETER

SYMBOL

RATINGS

833

UNIT

°C/W

Channel to Ambient

θ_JA

ELECTRICAL CHARACTERISTICS (Ta =25°C, it is the same rating for the Tr1 And Tr2)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate- Source Leakage Current

ON CHARACTERISTICS

Gate Threshold Voltage

BV_DSS

I_DSS

I_D=1mA, V_GS=0V

V_DS=60V, V_GS=0V

µA

I_GSS

V_GS= ±20 V, V_DS=0 V

±10 µA

V_GS(TH)

V_DS=10V, I_D=1mA

1.0

2.5

1.7 2.4

2.1 3.0

2.3 3.2

3.0 12.0

V_GS=10V, I_D=250mA

V_GS=4.5V, I_D=250mA

V_GS=4.0V, I_D=250mA

V_GS=2.5V, I_D=10mA

Static Drain-Source On-State

Resistance

R_DS(ON)

(Note1)

Ω

DYNAMIC PARAMETERS

Input Capacitance

C_ISS

C_OSS

C_RSS

4.5

2.0

V_GS=0V, V_DS=25V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

t_D(ON)

(Note1)

t_R

(Note1)

t_D(OFF)

(Note1)

t_F

Turn-ON Delay Time

Rise Time

3.5

I_D=100mA, V_DD30V, V_GS=10V,

R_L300Ω, R_G=10Ω

See Fig 1-1.1-2

Turn-OFF Delay Time

Fall-Time

(Note1)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

V_SD

(Note1)

|Y_fs|

I_S=250mA, V_GS=0V

_DS=10V, I_D=250mA

1.2

Forward Transfer Admittance

0.25

(Note1)

Note1: PW≤10μs DUTY CYCLE≤1%

UNISONIC TECHNOLOGIES CO., LTD

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UM6K31N

Preliminary

Power MOSFET

TEST CIRCUIT

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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