UN1518-AE3-R [UTC]
POWER (SWITCHING) TRANSISTOR; 电源（开关）晶体管
| 型号： | UN1518-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | POWER (SWITCHING) TRANSISTOR |
| 文件： | 总3页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UN1518
NPN SILICON TRANSISTOR
POWER (SWITCHING)
TRANSISTOR
FEATURES
* Bipolar power transistor
* High current switching
* High hFE
* Low VCE(SAT)
*Pb-free plating product number: UN1518L
ORDERING INFORMATION
Order Number
Pin Assignment
Package
SOT-23
Packing
Normal
Lead Free Plating
UN1518L-AE3-R
1
2
3
UN1518-AE3-R
E
B
C
Tape Reel
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-088,A
UN1518
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise stated)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
RATINGS
UNIT
V
Collector-Base Voltage
20
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Pulse) Note 2
Collector Current (DC)
Base Current
20
V
5
6
V
A
IC
2.5
A
IB
500
mA
mW
℃
Total Device Dissipation
Storage Temperature
PD
625
TSTG
-50 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse test tp=300μs. δ ≤ 2%
ELECTRICAL CHARACTERISTICS
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage BVCEO* IC=10mA
SYMBOL
TEST CONDITIONS
MIN
20
20
5
TYP MAX UNIT
BVCBO IC=100µA
100
27
V
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVEBO IE=100µA
8.3
V
ICBO
IEBO
ICES
VCB=16V
100
100
100
15
150
200
1.0
1.0
nA
nA
nA
Emitter Cut-Off Current
VEB=4V
Collector Emitter Cut-Off Current
VCES=16V
IC=0.1A, IB=10mA
10
70
Collector-Emitter Saturation Voltage
VCE(SAT)* IC=1A, IB=10mA
IC=2.5A, IB=50mA
mV
130
0.89
0.79
400
450
360
180
140
23
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(SAT)* IC=2.5A, IB=50mA
VBE(ON)* IC=2.5A,VCE=2V
IC=10mA, VCE=2V
V
V
200
300
200
100
100
IC=200mA, VCE=2V
hFE*
Static Forward Current Transfer Ratio
IC=2A, VCE=2V
IC=6A, VCE=2V
Transition Frequency
Output Capacitance
fT
IC=50mA, VCE=10V f=100MHz
VCB=10V, f=1MHz
MHz
pF
Cob
30
Turn-On Time
t(ON)
t(OFF)
170
400
nS
VCC=10V, IC=1A IB1=-IB2=10mA
Turn-Off Time
nS
* Pulse test conditions. tp=300μs. δ ≤ 2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-088,A
www.unisonic.com.tw
UN1518
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS (Ta=25℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-088,A
www.unisonic.com.tw
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