UP2003-TN3-R [UTC]
P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; P沟道逻辑电平增强模式场效应晶体管
| 型号： | UP2003-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总5页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UP2003
Power MOSFET
P-CHANNEL LOGIC LEVEL
ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
DESCRIPTION
The UP2003 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* VDS(V)=-25V
* ID=-9 A
*Pb-free plating product number: UP2003L
* RDS(ON)<35 mΩ@ VGS =-4.5 V, ID =-7 A
* RDS(ON)<20 mΩ@ VGS =-10 V, ID =-9 A
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
UP2003L-TN3-R
UP2003L-TN3-T
1
G
G
2
D
D
3
S
S
UP2003-TN3-R
UP2003-TN3-T
TO-252
TO-252
Tape Reel
Tube
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Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R502-202.B
UP2003
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VGSS
ID
RATINGS
UNIT
V
Gate Source voltage
±20
-9
Continuous Drain Current
Pulsed Drain Current (Note 1)
Power Dissipation
A
IDM
-50
PD
2.5
W
°C
Junction Temperature
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
MAX
50
UNIT
°C/W
°C/W
Junction-to-Ambient
Junction-to-Case
θJC
25
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS =0 V, ID=-250µA
VDS =-24 V, VGS =0 V
DS =-20 V, VGS =0 V
-25
V
-1
Drain Source Leakage Current
µA
nA
V
-10
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate-Threshold Voltage
IGSS
VDS =0 V, VGS =±20V
±100
VGS(TH)
ID(ON)
VDS =VGS, ID =-250 µA
VDS = -5V, VGS = -10V
VGS =-4.5 V, ID =-7 A
-1.0
-50
-1.5
-3.0
V
A
On-State Drain Current (Note 2)
25
15
35
20
Drain-Source On-Resistance (Note 2) RDS(ON)
mΩ
VGS =-10 V, ID =-9 A
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
1610
410
VDS =-15 V, VGS =0V, f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 3)
Gate to Source Charge
Gate Charge at Threshold
Gate to Drain Charge
Turn-ON Delay Time
200
QG
QGS
QGD
tD(ON)
tR
17
5
24
VDS =-0.5V(BR)DSS, VGS =-10 V,
nC
ns
ID =-9 A
6
6.2
10
18
10
5
9.3
Turn-ON Rise Time
VDS =-15V, ID≈-1A, VGS =-10V,
Turn-OFF Delay Time
Turn-ON Delay Time
tD(OFF)
tD(ON)
tF
RGS =6ꢀ ,RL=1ꢀ
Turn-OFF Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Continuous Forward Current
Diode Pulse Current (Note 1)
Forward Voltage (Note 2)
IS
-2.1
-4
A
V
ISM
VSD
IF=IS, VGS=0 V
-1.2
Note: 1. Pulse width limited by maximum junction temperature.
2. Pulse test: Pulse Width ≤ 300μsec, Duty Cycle ≤ 2%
3. Independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-202.B
UP2003
Power MOSFET
TYPICAL CHARACTERISTICS
On-Resistance vs. Drain Current
and Gate Voltage
On-Resistance vs. Junction Temperature
2.4
1.6
1.4
1.2
ID=-9A
VGS=-10V
VGS=-3.5V
2.2
2.0
1.8
-4.0V
-4.5V
-5V
-6V
1.6
1.4
1
-7V
1.2
1.0
0.8
0.8
-10V
0.6
0
10
20
30
40
50
-50 -25
0
25 50
100 125 150 175
75
Drain Current,-ID (A)
Junction Temperature (°С)
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QW-R502-202.B
UP2003
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Gate-Charge Characteristics
VDS=-5V
Capacitance Characteristics
10
8
2500
2000
1500
ID=-9A
f=1MHZ
VGS=0V
-10V
CISS
6
-15V
4
2
0
1000
500
0
COSS
CRSS
12
18
24
30
0
5
10
15
20
25
30
0
6
Drain to Source Voltage,-VDS (V)
Gate Charge,-QG (nC)
Single Pulse Maximum Power Dissipationg
Maximum Safe Operating Area
RDS(ON)
Limited
100
50
40
Single Pulse
θJA=125°С/W
TA=25°С
100μs
1ms
10ms
10
1
100ms
1s
10s
30
20
DC
VGS=-10V
0.01
0.1
10
0
Single Pulse
θJA=125°С/W
TA=25°С
1000
0.1
1
10
100
0.001 0.01 0.1
1
10
100
Drain to Source Voltage,-VDS (V)
Pulse Width (s)
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QW-R502-202.B
UP2003
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R502-202.B
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