UP2518-AE3-6-R [UTC]
LOW VCE(SAT) PNP SILICON POWER TRANSISTORS; 低VCE （ SAT） PNP硅功率晶体管
| 型号： | UP2518-AE3-6-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | LOW VCE(SAT) PNP SILICON POWER TRANSISTORS |
| 文件： | 总4页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UP2518
PNP EPITAXIAL SILICON TRANSISTOR
LOW VCE(SAT) PNP SILICON
POWER TRANSISTORS
ꢀ
FEATURES
3
* Extremely low collector-emitter saturation voltage VCE(SAT) and
corresponding extremely low equivalent on-resistance RCE(SAT)
(97mΩ at 1.5A)
* High collector current capability(1.5A)
* High peak pulse current up to 6A
* High collector current gain
1
2
SOT-23
*Pb-free plating product number: UP2518L
ꢀ PIN CONFIGURATION
PIN NO.
PIN NAME
EMITTER
1
2
3
BASE
COLLECTOR
ꢀ
ꢀ
ORDERING INFORMATION
Order Number
Package
SOT-23
Packing
Normal
Lead Free Plating
UP2518L-AE3-6-R
UP2518-AE3-6-R
Tape Reel
MARKING INFORMATION
Y18
www.unisonic.com.tw
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Copyright © 2005 Unisonic Technologies Co., LTD
QW-R206-083,A
UP2518
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATING (Ta = 25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IPEAK
IC
RATINGS
-20
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-20
V
-5
V
Peak Pulse Current (Note 2)
Continuous Collector Current
Base Current
-6
A
-1.5
A
IB
-500
625
mA
mW
℃
℃
Power Dissipation at Ta =25°C(Note 3)
Junction Temperature
PD
TJ
+150
-40~+150
Storage Temperature
TSTG
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width=300ms. Duty cycle≤2%
3. Assume the device is mounted and measured on a ceramic substrate15x15x0.6mm
ꢀ
ELECTRICAL CHARACTERISTICS (Ta = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO IC= -100µA
BVCEO IC= -10mA
BVEBO IE= -100µA
-20
-20
-5
-65
-55
-8.8
V
V
V
ICBO
IEBO
ICES
VCB= -15V
-100
-100
-100
-40
nA
nA
nA
mV
mV
mV
V
Emitter Cut-Off Current
VEB= -4V
Collector Emitter Cut-Off Current
VCES= -15V
IC= -100mA, IB= -10mA
VCE(SAT) IC= -1A, IB= -20mA
IC= -1.5A, IB= -50mA
-16
Collector-Emitter Saturation Voltage
-130 -200
-145 -220
-0.87 -1.0
-0.81 -1.0
475
450
230
70
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(SAT) IC= -1.5A, IB= -50mA
VBE(ON) IC= -2A, VCE= -2V
IC= -10mA, VCE= -2V
V
300
300
150
35
IC= -100mA, VCE= -2V
DC Current Gain
hFE
IC= -2A, VCE= -2V
IC= -4A, VCE= -2V
IC= -6A, VCE= -2V
15
30
Transition Frequency
Output Capacitance
Turn-On Time
fT
IC= -50mA, VCE =-10V, f=100MHz
VCB= -10V, f=1MHz
150
180
MHZ
pF
COB
t(ON)
t(OFF)
21
40
30
VCC= -10V, IC= -1A
ns
IB1= IB2= -20mA
Turn-Off Time
670
ns
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤ 2%
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-083,A
www.unisonic.com.tw
UP2518
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTIC
VCE(SAT) vs IC
VCE(SAT) vs IC
1
100m
10m
1m
0.6
+25℃
IC/IB=30
0.5
0.4
0.3
100℃
25℃
-40℃
IB/IC=50
IB/IC=30
IB/IC=10
0.2
0.1
0.0
10m
Collector Current, IC(A)
1m
100m
1
10
1mA
10mA
100mA
1mA
10mA
Collector Current
VBE(SAT) vs IC
hFE vs IC
1.4 100℃
1.2 25℃
1.0
IC/IB=10
VCE=2V
1.4
1.2
1.0
450
-40℃
25℃
0.8
0.8
0.6
0.6 -40℃
0.4
100℃
225
0
0.4
0.2
0.2
0.0
1mA
0.0
1mA
10mA
100mA
1A
10A
10mA
100mA
1A
10A
Collector Current
Collector Current
VBE(SAT) vs IC
Safe Operating Area
10
1.2
VCE=2V
1.0
0.8
0.6
0.4
0.2
0.0
-40℃
25℃
D.C.
1s
100ms
1.0
10ms
1ms
100℃
100μs
0.1
0.1
Single Pulse Test
Ta=25℃
1mA
10mA
1A
10A
100mA
0.1
1.0
10
100
VCE (V)
Collector Current
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-083,A
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UP2518
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ
THERMAL CHARACTERISTICS AND DERATING INFORMATION
Derating Curve
Maximum Transient Thermal Resistance
200
D=1.0
D = f1 /
fP
f 1
1000
150
100
50
800
600
400
200
0
f P
D=0.5
D=0.2
D=0.1
D=0.5
Devices were mounted on a
15mmx15mm ceramic substrate
0
0.1ms 1ms
10ms
0.1ms
1s
10s
200
-60 -40 -20
0
20 40 60 80 100 120 140 160
Ambient Temperature (℃)
Pulse Width
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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