UP2518G-AE3-R [UTC]
LOW VCE(SAT) PNP SILICON POWER TRANSISTORS; 低VCE （ SAT） PNP硅功率晶体管
| 型号： | UP2518G-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | LOW VCE(SAT) PNP SILICON POWER TRANSISTORS |
| 文件： | 总3页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UP2518
Preliminary
PNP TRANSISTOR
LOW VCE(SAT) PNP SILICON
POWER TRANSISTORS
FEATURES
*Extremely low collector-emitter saturation voltage VCE(SAT) and
corresponding extremely low equivalent on-resistance RCE(SAT)
(97mΩ at 1.5A)
*High collector current capability(1.5A)
*High peak pulse current up to 6A
*High collector current gain
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-23
Packing
Lead Free
Halogen Free
UP2518G-AE3-R
1
2
3
UP2518L-AE3-R
E
B
C
Tape Reel
MARKING
Y18
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-083.Bb
UP2518
Preliminary
PNP TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta= 25°C, unless otherwise stated)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IPEAK
IC
RATINGS
UNIT
V
Collector-Base Voltage
-20
-20
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current (Note 2)
Continuous Collector Current
Base Current
V
-5
V
-6
A
-1.5
A
IB
-500
625
mA
mW
°С
°С
Power Dissipation (Note 3)
Junction Temperature
Storage Temperature
Ta =25°C
PD
TJ
+150
-55~+150
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width=300µs. Duty cycle≤2%
3. Assume the device is mounted and measured on a ceramic substrate15x15x0.6mm
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise stated)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO IC= -100µA
-20
-20
-5
-65
-55
-8.8
V
V
BVCEO IC= -10mA (Note)
BVEBO IE= -100µA
V
ICBO
IEBO
ICES
VCB= -15V
-100
-100
-100
-40
nA
nA
nA
mV
mV
mV
V
Emitter Cut-Off Current
VEB= -4V
Collector Emitter Cut-Off Current
VCES= -15V
IC= -100mA, IB= -10mA (Note)
IC= -1A, IB= -20mA (Note)
IC= -1.5A, IB= -50mA (Note)
-16
Collector-Emitter Saturation Voltage
VCE(SAT)
-130 -200
-145 -220
-0.87 -1.0
-0.81 -1.0
475
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(SAT) IC= -1.5A, IB= -50mA (Note)
VBE(ON) VCE= -2V, IC= -2A (Note)
VCE= -2V, IC= -10mA (Note)
V
300
300
150
35
VCE= -2V, IC= -100mA (Note)
450
DC Current Gain
hFE
VCE= -2V, IC= -2A, (Note)
VCE= -2V, IC= -4A, (Note)
VCE= -2V, IC= -6A, (Note)
VCE =-10V , IC= -50mA, f=100MHz
VCB= -10V, f=1MHz
230
70
15
30
Transition Frequency
Output Capacitance
Turn-On Time
fT
150
180
MHZ
pF
COB
t(ON)
t(OFF)
21
40
30
VCC= -10V, IC= -1A
ns
IB1= IB2= -20mA
Turn-Off Time
670
ns
Note: Measured under pulsed conditions. Pulse width=300µs. Duty cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-083.Bb
www.unisonic.com.tw
UP2518
Preliminary
PNP TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-083.Bb
www.unisonic.com.tw
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UTC
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