UT100N03L-TQ2-R [UTC]

100A, 30V N-CHANNEL POWER MOSFET; 100A ， 30V N沟道功率MOSFET


型号：	UT100N03L-TQ2-R
厂家：	Unisonic Technologies
描述：	100A, 30V N-CHANNEL POWER MOSFET 100A ， 30V N沟道功率MOSFET
文件：	总5页 (文件大小：275K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UT100N03

Power MOSFET

100A, 30V N-CHANNEL

POWER MOSFET

TO-220

DESCRIPTION

The UT100N03 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation with

low gate voltages. This device is suitable for use as a load

switch or in PWM applications.

TO-251

FEATURES

* R_DS(ON)= 5.3mΩ@V_GS=10 V

* R_DS(ON)= 8.0mΩ@V_GS=4.5 V

SYMBOL

2.Drain

TO-263

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

UT100N03L-TA3-T

UT100N03L-TM3-T

UT100N03L-TQ2-R

UT100N03L-TQ2-T

UT100N03G-TA3-T

UT100N03G-TM3-T

UT100N03G-TQ2-R

UT100N03G-TQ2-T

TO-220

TO-251

TO-263

Tube

Tape Reel

Tube

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UT100N03

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C=25℃, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current

100

Pulsed Drain Current (Note 2)

I_DM

400

Single Pulsed Avalanche Current (Note 3)

Single Pulsed Avalanche Energy (Note 3)

I_AS

E_AS

875

TO-220/TO-263

100

Power Dissipation

TO-251

P_D

TO-220/TO-263

TO-251

0.67

0.4

Derate above 25℃

W/℃

Junction Temperature

Strong Temperature

T_J

+175

-55 ~ +175

℃

T_STG

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by maximum junction temperature

L = 0.5mH, I_AS= 35A, V_DD= 25V, R_G= 25Ω, Starting T_J= 25℃.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

62.5

UNIT

TO-220/TO-263

TO-251

℃/W

Junction to Ambient

Junction to Case

θ_JA

110

TO-220/TO-263

TO-251

1.5

℃/W

θ_JC

2.5

ELECTRICAL CHARACTERISTICS (T_J=25℃, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

ON CHARACTERISTICS(Note2)

Gate Threshold Voltage

BV_DSS

I_DSS

V_GS=0 V, I_D=250 µA

V_DS=30 V,V_GS=0 V

µA

I_GSS

V_DS=0 V, V_GS= ±20 V

±100 nA

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250 µA

V_GS=10 V, I_D=50 A

V_GS=4.5 V, I_D=40 A

3.05 5.3

Static Drain-Source On-Resistance

mΩ

4.2

DYNAMIC PARAMETERS(Note3)

Input Capacitance

C_ISS

C_OSS

C_RSS

9500

800

_DS=15V, V_GS=0V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS(Note3)

Total Gate Charge

300

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

20.8

V_DS=15V, V_GS=5V, I_D=16A

Gate Source Charge

Gate Drain Charge

Turn-ON Delay Time

25.7 50

10 20

128 200

Turn-ON Rise Time

V_DD=15V, I_D=1A, R_GEN=6ꢀ

V_GS=10 V

Turn-OFF Delay Time

Turn-OFF Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Drain-Source Diode Forward Current

V_SD

I_S

I_S=20 A,V_GS=0 V

1.5

Note: 1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.

2. Guaranteed by design, not subject to production testing.

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UT100N03

Power MOSFET

TEST CIRCUIT AND WAVEFORM

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UT100N03

Power MOSFET

TYPICAL CHARACTERISTICS

Output Characteristics

Transfer Characteristics

100

V_GS=10,8,6,4V

V_GS=3V

25℃

T_J=125℃

-55℃

Drain to Source Voltage,V_DS(V)

Gate to Source Voltage,V_GS(V)

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UT100N03

Power MOSFET

TYPICAL CHARACTERISTICS(Cont.)

Normalized Thermal Transient Impedanc Curve

10⁰

10^-1

10^-2

D=0.5

0.2

0.1

P_DM

t₁

0.05

0.02

t₂

1.R_θJC(t)=r(t)*R_θJC

0.01

2.R_θJC=See Datasheet

3.T_JM-T_C=P*R_θJC(t)

4.Duty Cycle,D=t₁/t₂

Single Pulse

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

Square Wave Pulse Duration (sec)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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