UT12N10L-TM3-T [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | UT12N10L-TM3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总3页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT12N10
Preliminary
Power MOSFET
12 Amps, 100 Volts
N-CHANNEL POWER MOSFET
1
SOT-223
DESCRIPTION
The UTC UT12N10 is an N-channel mode Power FET using
UTC’s advanced technology to provide custumers with minimum
on-state resistance by extremely high dense cell design. Moreover,
it‘ s good at handing high power and current.
1
FEATURES
TO-252
TO-251
* RDS(ON) < 180mΩ @ VGS=10V, ID=6A
* Be good at handing high power and current.
* Very high dense cell design for super low RDS(ON)
* Lead free product is acquired.
.
1
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
-
Halogen Free
1
2
D
D
D
3
S
S
S
UT12N10G-AA3-T
UT12N10G-TM3-T
UT12N10G-TN3-R
SOT-223
TO-251
TO-252
G
G
G
Tape Reel
Tube
UT12N10L-TM3-T
UT12N10L-TN3-R
Note: Pin Assignment: G: Gate
Tape Reel
D: Drain
S: Source
MARKING
SOT-223
TO-251 / TO-252
www.unisonic.com.tw
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Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R502-508.f
UT12N10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
100
±20
V
V
A
A
Continuous
12
Drain Current
Pulsed (Note 2)
SOT-223
IDM
44
9
Power Dissipation
PD
W/°C
TO-251/TO-252
36
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
PARAMETER
SOT-223
SYMBOL
RATINGS
UNIT
°C/W
150
50
Junction to Ambient (Note 2)
θJA
TO-251/TO-252
SOT-223
14
Junction to Case
θJC
°C/W
TO-251/TO-252
3.5
Note: 1. θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins.
θ
JC is guaranteed by design while θJA is determined by the user’s board design.
2. When mounted on a 1 in2 pad of 2 oz copper.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS ID=250µA, VGS=0V
IDSS VDS=100V, VGS=0V
GS=+20V, VDS=0V
VGS=-20V, VDS=0V
100
V
1
µA
Forward
Reverse
V
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
VGS(TH) VDS=VGS, ID=250µA
RDS(ON) VGS=10V, ID=6A
1
3
V
150 180 mΩ
gFS
VDS=10V, ID=6A
5
S
CISS
COSS
CRSS
430 500 pF
Output Capacitance
V
V
GS=0V, VDS=25V, f=1.0MHz
90
20
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 2)
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
8
1.5
2
16
24
nC
nC
nC
ns
Gate to Source Charge
Gate to Drain Charge
GS=10V, VDS=50V, ID=1.3A
Turn-ON Delay Time
12
Rise Time
174 185 ns
132 145 ns
188 210 ns
VDD=30V, ID=0.5A, VGS=10V,
RG=25Ω
Turn-OFF Delay Time
tD(OFF)
tF
Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Drain-Source Diode Forward Voltage (Note 1)
IS
12
A
V
VSD
IS=12A, VGS=0V
1.2
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R502-508.f
www.unisonic.com.tw
UT12N10
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
VDD
ton
toff
td(on)
td(off)
90%
Inverted
tr
tf
90%
RL
RGEN
VOUT
VIN
10%
90%
VOUT
10%
D
G
50%
50%
V
IN10%
S
Pulse Width
Switching Waveforms
Switching Test Circuit
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R502-508.f
www.unisonic.com.tw
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