UT2321G-AE3-R [UTC]
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; P沟道增强型场效应晶体管
| 型号： | UT2321G-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总4页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT2321
Power MOSFET
P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UT2321 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* RDS(ON)<55mΩ @VGS=-4.5V
* RDS(ON)<80mΩ @VGS=-2.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-23
Packing
Lead Free
Halogen Free
1
S
2
G
3
D
UT2321L-AE3-R
UT2321G-AE3-R
Tape Reel
MARKING
231
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R502-249.D
UT2321
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-20
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±12
-3.8
V
Continuous Drain Current (Note 2)
Pulsed Drain Current (Note 2)
Power Dissipation
A
IDM
-15.2
1.25
A
PD
W
°C
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
100
UNIT
°C/W
Junction to Ambient
θJA
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=-250µA
-20
V
VDS=-16V, VGS=0V
VGS=12V, VDS=0V
VGS=-12V, VDS=0V
-1
µA
nA
nA
Forward
100
-100
Gate-Source Leakage Current
IGSS
Reverse
ON CHARACTERISTICS(Note)
Gate-Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=-250µA
VGS=-4.5V, ID=-2.4A
VGS=-2.5V, ID=-2.0A
-0.4
-1.0
55
V
45
65
mΩ
mΩ
Static Drain-Source On-Resistance
80
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
1500
270
pF
pF
pF
VDS=-10 V, VGS =0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
185
QG
QGS
QGD
tD(ON)
tR
14.8
2.8
4.4
13
19
nC
nC
nC
ns
ns
ns
ns
VDS=-10V, VGS=-4.5V, ID=-2.4A
VDD=-10V, ID=-1A, VGS=-4.5V,
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
24
24
8
RGEN=6 ꢀ
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(OFF)
tF
65
256
72
29
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage(Note)
Maximum Body-Diode Continuous
Current
VSD
VGS=0V, IS =-0.42A
-1.2
V
A
IS
-0.42
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-249.D
UT2321
Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-249.D
UT2321
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-249.D
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