UT3006L-TN3-R [UTC]

55A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET; 55A ， 30V N沟道增强型功率MOSFET


型号：	UT3006L-TN3-R
厂家：	Unisonic Technologies
描述：	55A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET 55A ， 30V N沟道增强型功率MOSFET
文件：	总3页 (文件大小：131K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UT3006

Preliminary

Power MOSFET

55A, 30V N-CHANNEL

ENHANCEMENT MODE POWER

MOSFET

DESCRIPTION

The UTC UT3006 is an N-channel enhancement MOSFET using

UTC’s advanced technology to provide the customers with perfect

R_DS(ON), cost-effectiveness and high switching speed.

This UTC UT3006 is suitable for DC/DC converters, etc.

FEATURES

* R_DS(ON)<9mΩ @ V_GS=10V,I_D=30A

* High Switching Speed

SYMBOL

ORDERING INFORMATION

Ordering Number

Lead Free

Pin Assignment

Package

TO-252

Packing

Halogen Free

UT3006G-TN3-R

UT3006L-TN3-R

Tape Reel

Note: Pin Assignment: G: Gate D: Drain

S: Source

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UT3006

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±20

Continuous

_GS@10V

T_C=25°C

I_D

Drain Current

T_C=100°C

Pulsed (Note 2)

I_DM

P_D

160

Power Dissipation (T_C=25°C)

Junction Temperature

Storage Temperature

°C

T_J

+175

-55~+175

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse test.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

θ_JA

RATINGS

UNIT

°C/W

Junction to Ambient

Junction to Case

110

θ_JC

ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

I_D=250µA, V_GS=0V

V_DS=30V, V_GS=0V

V_DS=0V, V_GS=+20V

V_DS=0V, V_GS=-20V

µA

Forward

Reverse

+100 nA

-100 nA

Gate- Source Leakage Current

I_GSS

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

g_FS

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=30A

V_GS=4.5V, I_D=20A

V_DS=10V, I_D=30A

Static Drain-Source On-State Resistance

(Note)

mꢀ

16 mꢀ

Forward Transconductance

DYNAMIC PARAMETERS

Input Capacitance

C_ISS

C_OSS

C_RSS

700 1120 pF

V_GS=0V, V_DS=25V, f=1.0MHz

Output Capacitance

215

155

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge (Note)

Gate to Source Charge

Gate to Drain Charge

Gate Resistance

Q_G

Q_GS

Q_GD

R_G

2.5

9.5

1.9

ꢀ

V_GS=4.5V, V_DS=24V, I_D=30A

f=1.0MHz

Turn-ON Delay Time (Note)

Rise Time

t_D(ON)

t_R

t_D(OFF)

t_F

V_DS=15V, I_D=30A, R_G=3.3ꢀ,

V_GS=10V, R_D=0.5 ꢀ

Turn-OFF Delay Time

Fall-Time

20.5

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note)

Body Diode Reverse Recovery Time (Note)

Body Diode Reverse Recovery Charge

Note: Pulse test.

V_SD

t_rr

I_S=30A, V_GS=0V

1.2

µC

I_S=10A, V_GS=0V, dI/dt=100A/µs

Q_RR

UNISONIC TECHNOLOGIES CO., LTD

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UT3006

Preliminary

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

V_G

V_DS

90%

Q_G

4.5V

Q_GD

Q_GS

10%

V_GS

t_d(on)t_r

t_d(off)t_f

Charge

Gate Charge Waveform

Switching Time Waveform

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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