UT3009G-TN3-R [UTC]

30V, 78A N-CHANNEL FAST SWITCHING POWER MOSFETS; 30V ， 78A N沟道快速开关功率MOSFET


型号：	UT3009G-TN3-R
厂家：	Unisonic Technologies
描述：	30V, 78A N-CHANNEL FAST SWITCHING POWER MOSFETS 30V ， 78A N沟道快速开关功率MOSFET 开关
文件：	总4页 (文件大小：150K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UT3009

Preliminary

Power MOSFET

30V, 78A N-CHANNEL FAST

SWITCHING POWER MOSFETS

DESCRIPTION

The UTC UT3009 is an N-channel enhancement power MOSFET

using UTC’s advanced technology to provide the customers with

perfect R_DS(ON), low gate charge, ultra high cell density and high

switching speed.

This UTC UT3009 is suitable for most of the synchronous buck

converter applications, etc.

FEATURES

* R_DS(ON)=5.5mΩ @ V_DSS=30V,I_D=78A

* High Switching Speed

* Low Gate Charge(typical 20.8nC)

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

TO-252

Packing

Lead Free

Halogen Free

UT3009G-TN3-R

UT3009L-TN3-R

Tape Reel

Note: Pin Assignment: G: Gate D: Drain

S: Source

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UT3009

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_DSS

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

V_GSS

Continuous

V_GS@10V (Note 1)

Pulsed (Note 2)

T_C=25°C

I_D

Drain Current

T_C=100°C

I_DM

I_AR

155

Avalanche Current

Single Pulsed Avalanche Energy (Note 3)

Power Dissipation (T_C=25°C) (Note 4)

Junction Temperature

E_AS

P_D

252

°C

T_J

-55~175

Storage Temperature

T_STG

Note:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

UNIT

°C/W

Junction to Ambient (Note 1)

Junction to Case (Note 1)

Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper.

2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.

θ_JC

2.8

3. The EAS data shows Max. rating. The test condition is V_DD=25V, V_GS=10V, L=0.1mH, I_AS=48A.

4. The power dissipation is limited by 175°C junction temperature.

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UT3009

Preliminary

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

I_D=250µA, V_GS=0V

96.4

Breakdown Voltage Temperature Coefficient △BV_DSS/△T_JReference to 25°C, I_D=1mA

mV/°C

T_J=25°C

Drain-Source Leakage Current

Gate- Source Leakage Current

I_DSS

I_GSS

V_DS=24V,V_GS=0V

µA

T_J=55°C

V_GS=+20V, V_DS=0V

Forward

Reverse

+100 nA

_GS=-20V, V_DS=0V

-100

2.5

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

1.0

1.5

-6.16

4.7

mV/°C

mꢀ

_DS=V_GS, I_D=250µA

V_GS(th)Temperature Coefficient

△V_GS(TH)

Static Drain-Source On-State Resistance

(Note 2)

V_GS=10V, I_D=30A

V_GS=4.5V, I_D=15A

V_DS=5V, I_D=30A

5.5

R_DS(ON)

g_FS

7.5

Forward Transconductance

DYNAMIC PARAMETERS

Input Capacitance

C_ISS

C_OSS

C_RSS

2361

315

_GS=0V, V_DS=15V,

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge (4.5V)

Gate to Source Charge

Gate to Drain Charge

Gate Resistance

f=1.0MHz

237

Q_G

Q_GS

Q_GD

R_G

20.8

5.3

10.5

1.7

ꢀ

_GS=4.5V, V_DS=20V,

I_D=12A

V_GS=0V, V_DS=0V, f=1.0MHz

3.4

Turn-ON Delay Time

Rise Time

t_D(ON)

t_R

t_D(OFF)

t_F

7.2

13.5

V_DD=12V, V_GS=10V, I_D=5A, 17.3 21.6 32.4

R_G=3.3ꢀ

Turn-OFF Delay Time

Fall-Time

21.3 26.6 40

8.4

10.5 15.8

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous

Current (Note 1,4)

I_S

155

V_D=V_G=0V, Force Current

Maximum Body-Diode Pulsed Current

(Note 2, 4)

I_SM

V_SD

E_AS

Drain-Source Diode Forward Voltage

(Note 2)

I_S=1A, V_GS=0V, T_J=25°C

_DD=25V, L=0.1mH,

Single Pulse Avalanche Energy (Note 3)

_AS=24A

Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper.

2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.

3. The Min. value is 100% EAS tested guarantee.

4. The data is theoretically the same as I_Dand I_DM, in real applications, should be limited by total power

dissipation.

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UT3009

Preliminary

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

BV_DSS

E_AS

L × I_AS×

BV_DSS-V_DD

V_DS

BV_DSS

90%

V_DD

I_AS

10%

V_GS

t_d(on)

t_d(off)

t_r

t_f

t_off

V_GS

t_on

Unclamped Inductive Switching Wave

Switching Time Waveform

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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