UT4812G-S08-R [UTC]
Power Field-Effect Transistor, 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, SOP-8;
| 型号： | UT4812G-S08-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, SOP-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT4812
Power MOSFET
DUAL N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UT4812 can provide excellent RDS(ON) and low gate
charge by using advanced trench technology. The UT4812 is
suitable for using as a load switch or in PWM applications.
FEATURES
* 30V/6.9A
* Low RDS(ON)
* Reliable and Rugged
SYMBOL
(7) (8)
D1
(5) (6)
D2
Lead-free: UT4812L
Halogen-free: UT4812G
(4)
G2
(2)
G1
S2
(3)
S1
(1)
ORDERING INFORMATION
Ordering Number
Package
Packing
Normal
Lead Free Plating
UT4812L-S08-R
UT4812L-S08-T
Halogen-Free
UT4812G-S08-R
UT4812G-S08-T
UT4812-S08-R
UT4812-S08-T
SOP-8
SOP-8
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
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QW-R502-166.B
UT4812
Power MOSFET
PIN CONFIGURATION
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QW-R502-166.B
UT4812
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
30
±20
Continuous Drain Current (Note3)
Pulsed Drain Current (Note1)
Power Dissipation
6.9
A
IDM
30
PD
2
W
℃
Junction Temperature
TJ
+150
-55 ~ +150
℃
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
74
MAX
110
UNIT
Junction-to-Ambient
θJA
℃/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS VGS =0 V, ID =250µA
30
V
IDSS
IGSS
VDS =30V, VGS =0 V
VDS =0 V, VGS = ±20V
1
µA
nA
100
Gate Threshold Voltage
VGS(TH) VDS =VGS, ID =250 µA
1
1.9
3
V
VGS =10V, ID =6.9A
RDS(ON)
22.5
34.5
28
42
mΩ
mΩ
Drain-Source On-State Resistance (Note2)
VGS =4.5V, ID =5.0A
DYNAMIC PARAMETERS
Input Capacitance
CISS
680
102
77
820
108
VDS =15 V, VGS =0V, f=1MHz
pF
Output Capacitance
COSS
CRSS
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
4.6
4.1
7
VGS=10V, VDS=15V, RL=2.2ꢀ,
GEN =3ꢀ
6.2
30
7.5
ns
R
Turn-OFF Delay Time
Turn-OFF Fall-Time
20.6
5.2
Total Gate Charge
QG
13.84 17
1.82
VDS =15V, VGS =10V, ID =6.9A
nC
Gate Source Charge
Gate Drain Charge
QGS
QGD
3.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward
Voltage(Note2)
VSD
IS
IS=1A
0.76
1
3
V
A
Maximum Continuous Drain-Source Diode
Forward Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
tRR
IF=6.9 A, dI/dt=100A/μs
IF=6.9 A, dI/dt=100A/μs
16.5
7.8
20
10
ns
QRR
nC
3. Surface Mounted on 1in 2 pad area, t≤10sec.
UNISONIC TECHNOLOGIES CO., LTD
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Power MOSFET
TYPICAL CHARACTERISTICS
On-Resistance vs. Junction
On-Resistance vs. Drain Current and
Gate Voltage
Temperature
1.6
1.5
1.4
1.3
60
50
40
30
ID=5A
VGS=10V
VGS=4.5V
VGS=4.5V
1.2
1.1
1
20
10
VGS=10V
0.9
0.8
0
50
100
150
200
0
5
10
15
20
Junction Temperature (℃)
Drain Current,ID (A)
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Capacitance Characteristics
Gate-Charge Characteristics
1000
900
10
8
f=1MHZ
VGS=0V
VDS=15V
ID=6.9A
800
700
600
500
400
300
200
100
0
CISS
6
4
2
0
COSS
CRSS
6
0
2
4
8
10
20
25
30
12
14
0
10
15
5
Gate Charge,QG (nC)
Drain to Source Voltage,VDS (V)
Maximum Forward Biased Safe
Operating Area (Note E)
Single Pulse Power Rating Junction-
to-Ambient (Note E)
40
30
100
10
TJ(Max)=150℃
TJ(Max)=150℃
TA=25℃
TA=25℃
100μs
1ms
RDS(ON) Limited
10μs
10ms
20
10
0.1s
1
1s
10s
DC
0.1
0
0.1
1
10
100
1
100 1000
0.001 0.01
0.1
10
Drain to Source Voltage,VDS (V)
Pulse Width (s)
Normalized Maximum Transient Thermal Impedance
In descending order
10
D=TON/T
J,PK=TA+PDM.ZθJA.RθJA
θJA=62.5℃/W
D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse
T
R
1
0.1
PDM
TON
T
Single Pulse
0.001
0.01
1000
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
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UT4812
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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