UT50N03G-TN3-R [UTC]
N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | UT50N03G-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：341K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT50N03
Power MOSFET
50A, 30V N-CHANNEL
POWER MOSFET
FEATURES
* RDS(ON) < 14 mΩ @ VGS = 10 V, ID = 30 A
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
2
D
D
D
3
S
S
S
UT50N03L-TM3-T
UT50N03L-TN3-R
UT50N03L-TND-R
UT50N03G-TM3-T
UT50N03G-TN3-R
UT50N03G-TND-R
TO-251
TO-252
G
G
G
Tube
Tape Reel
Tape Reel
TO-252D
Note: Pin Assignment: G: Gate D: Drain S: Source
MARKING
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QW-R502-168.F
UT50N03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
30
±20
Gate-Source Voltage
V
Continuous Drain Current
Pulsed Drain Current (Note 2)
Single Pulsed Avalanche Energy (Note 3)
Power Dissipation
50
A
IDM
180
A
EAS
45
mJ
W
PD
50
Junction Temperature
TJ
+150
-55 ~ +150
°C
°C
Storage Temperature
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 0.1mH, IAS = 30A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
71.4
UNIT
°C/W
°C/W
Junction to Ambient (Note 3)
Junction to Case
θJC
3.0
Note: Surface-mounted on FR4 board using 1 sq in pad, 1 oz Cu
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UT50N03
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS VGS =0V, ID =250 µA
30
V
IDSS
IGSS
VDS=20V, VGS =0V
1.5
µA
VDS =0V, VGS = ±20V
±100 nA
Gate-Threshold Voltage
VGS(TH) VDS =VGS, ID =250 µA
1.0
1.7
12
2.0
V
ID = 30 A
mΩ
mΩ
mΩ
mΩ
mΩ
VGS = 11.5V
VGS = 10 V
VGS = 4.5V
ID = 15 A
ID = 30 A
ID = 30 A
ID = 15 A
11.7
12.5
21
Drain-Source On-State Resistance
RDS(ON)
14
23
19
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
610
300
125
750
pF
pF
pF
VDS=12V, VGS =0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
tD(ON)
tR
tD(OFF)
tF
8.2
9.6
11.2
6.8
5.0
84
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
nC
nC
VGS = 4.5 V, VDS =15 V,
ID = 30 A, RG = 3.0Ω
Turn-OFF Delay Time
Turn-OFF Fall-Time
Turn-ON Delay Time
Turn-ON Rise Time
VGS = 11.5 V, VDS =15 V,
ID = 30 A, RG = 3.0Ω
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
15
4.0
6.0
1.9
3.7
15
QG
10
VDS =15V,VGS =4.5V,
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
QGS
QGD
QG
ID =30 A
VDS =15V,VGS =11.5V,
Gate-to-Source Charge
Gate-to-Drain Charge
QGS
QGD
1.9
3.9
ID =30 A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
IS=30 A, VGS =0V
0.85
1.1
45
V
A
IS
Reverse Recovery Time
trr
IS = 30 A, VGS = 0 V,
dI /dt = 100 A/μs
24
14
ns
Reverse Recovery Charge
QRR
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
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UT50N03
Power MOSFET
TYPICAL CHARACTERISTICS
On-Resistance versus Gate-to-
Source Voltage
On-Resistance versus Drain Current
and Gate Voltage
0.065
0.030
0.025
TJ=25℃
ID=15A
TJ=25℃
0.055
0.045
VGS=4.5V
0.020
0.035
0.025
0.015
0.010
VGS=10V
0.015
0.005
0.005
0
2
3
10
50
4
5
6
7
8
9
10
20
30
40
Gate-to-Source Voltage,VGS (V)
Drain Current,ID (A)
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UT50N03
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
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UT50N03
Power MOSFET
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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