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UT60N03-TN3-T [UTC]

Transistor;
UT60N03-TN3-T
型号： UT60N03-TN3-T
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Transistor
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UNISONIC TECHNOLOGIES CO., LTD  
UT60N03  
Power MOSFET  
N-CHANNEL LOGIC LEVEL  
MOSFETS 30V, 30A, 0.023Ω  
„
DESCRIPTION  
This device employs advanced MOSFET technology and  
features low gate charge while maintaining low on-resistance.  
Optimized for switching applications, this device improves the  
overall efficiency of DC/DC converters and allows operation to  
higher switching frequencies.  
„
FEATURES  
* RDS(ON) = 14mΩ @VGS = 10V  
* RDS(ON) = 24mΩ @VGS = 4.5V  
* Low capacitance  
* Low gate charge  
* Fast switching capability  
* Avalanche energy specified  
Lead-free:  
Halogen-free: UT60N03G  
UT60N03L  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free  
Halogen Free  
1
2
D
D
3
S
S
UT60N03-TN3-R  
UT60N03-TN3-T  
UT60N03L-TN3-R  
UT60N03L-TN3-T  
UT60N03G-TN3-R  
UT60N03G-TN3-T  
TO-252  
TO-252  
G
G
Tape Reel  
Tube  
www.unisonic.com.tw  
Copyright © 2008 Unisonic Technologies Co., Ltd  
1 of 5  
QW-R502-237.A  
UT60N03  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
RATINGS  
30  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGSS  
ID  
±20  
V
Continuous Drain Current (VGS=10V)  
Power Dissipation  
Derate above 25°C  
30  
A
45  
W
PD  
0.37  
+150  
W/°C  
°C  
Junction Temperature  
Storage Temperature  
TJ  
TSTG  
-55 ~ +150  
°C  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
MIN  
TYP  
100  
MAX  
UNIT  
°C/W  
°C/W  
Junction-to-Ambient  
Junction-to-Case  
θJC  
2.73  
„
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
ON CHARACTERISTICS  
BVDSS  
IDSS  
VGS=0V, ID=250µA  
30  
1
V
VDS=25V, VGS=0V  
VDS=0V, VGS=±20V  
1
µA  
nA  
IGSS  
±100  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250µA  
VGS=10V, ID=30A  
VGS=4.5V, ID=19A  
3
V
14  
24  
23  
30  
Static Drain-Source On-Resistance  
mΩ  
DYNAMIC PARAMETERS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
VGS=4.5V  
CISS  
COSS  
CRSS  
900  
210  
90  
pF  
pF  
pF  
VDS=15V, VGS=0V, f=1MHz  
Turn-ON Time  
t(ON)  
tD(ON)  
tR  
90  
83  
ns  
ns  
ns  
ns  
ns  
ns  
Turn-ON Delay Time  
Turn-ON Rise Time  
Turn-OFF Time  
11  
49  
VDD=15V, ID=7.9A, RL=18ꢀ  
t(OFF)  
tD(OFF)  
tF  
Turn-OFF Delay Time  
Turn-OFF Fall-Time  
VGS=10V  
27  
28  
Turn-ON Time  
t(ON)  
tD(ON)  
tR  
48  
ns  
ns  
ns  
ns  
ns  
ns  
Turn-ON Delay Time  
Turn-ON Rise Time  
Turn-OFF Time  
6
26  
VDD=15V, ID=7.9A, RL=18ꢀ  
t(OFF)  
tD(OFF)  
tF  
120  
Turn-OFF Delay Time  
Turn-OFF Fall-Time  
52  
28  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R502-237.A  
www.unisonic.com.tw  
UT60N03  
Power MOSFET  
„
ELECTRICAL CHARACTERISTICS(Cont.)  
SWITCHING PARAMETERS(Cont.)  
VGS=0V~5V, VDD=15V, ID=19A  
5V  
10V  
18  
9.6  
1.0  
28  
14  
IG=1.0mA  
VGS=0V~10V, VDD=15V,  
ID=19A, IG=1.0mA  
Total Gate Charge  
QG  
nC  
nC  
VGS=0V~1V, VDD=15V, ID=19A  
Threshold Gate Charge  
QG(TH)  
1.5  
IG=1.0mA  
Gate-Source Charge  
Gate-Drain Charge  
QGS  
QGD  
3.4  
3.4  
nC  
nC  
VDD=15V, ID=19A IG=1.0mA  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
ISD=19A  
1.25  
1.0  
58  
Drain-Source Diode Forward Voltage  
VSD  
V
I
SD=10A  
Reverse Recovery Time  
Reverse Recovery Charge  
tRR  
ns  
ISD=9A, dIS/dt =100A/s,  
QRR  
70  
nC  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 5  
QW-R502-237.A  
www.unisonic.com.tw  
UT60N03  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
Drain Current vs. Source to Drain Voltage  
Switching Time Waveforms  
12  
10  
8
VDS  
90%  
6
10%  
4
VGS  
tD(ON)  
tD(OFF)  
2
tTHL  
tTLH  
0
200  
400  
600  
800  
0
Source to Drain Voltage,VSD (mV)  
UNISONIC TECHNOLOEO., LTD  
4 of 5  
www.unisonic.com.tw  
QW-R502-237.A  
UT60N03  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 5  
QW-R502-237.A  
www.unisonic.com.tw  

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