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UT60N04G-TMS-T [UTC]

Power Field-Effect Transistor,;
UT60N04G-TMS-T
型号： UT60N04G-TMS-T
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Power Field-Effect Transistor,
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UNISONIC TECHNOLOGIES CO., LTD  
UT60N04  
Power MOSFET  
60A, 40V N-CHANNEL  
POWER MOSFET  
1
1
DESCRIPTION  
The UTC UT60N04 is a N-channel enhancement MOSFET using  
UTC’s advanced technology to provide the customers with perfect  
RDS(ON) and high switching speed.  
TO-251  
TO-251S  
The UTC UT60N04 is suitable for all commercial-industrial  
applications at power dissipation levels to approximately 50 watts,  
etc.  
SOP-8  
FEATURES  
* RDS(ON) ≤ 11.5 mΩ @ VGS=4.5V, ID=20A  
RDS(ON) ≤ 8.0 mΩ @ VGS=10V, ID=30A  
* High Switching Speed  
SYMBOL  
Drain  
Gate  
Source  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
G
G
S
2
3
S
S
S
4
-
5
-
6
-
7
-
8
-
UT60N04L-TM3-T  
UT60N04G-TM3-T  
UT60N04G-TMS-T  
UT60N04G-S08-R  
G: Gate D: Drain  
TO-251  
TO-251S  
SOP-8  
D
D
S
Tube  
Tube  
UT60N04L-TMS-T  
UT60N04L-S08-R  
-
-
-
-
-
G
D
D
D
D Tape Reel  
Note: Pin Assignment: Source  
UT60N04G-TM3-T  
(1)Packing Type  
(2)Package Type  
(1) T: Tube, R: Tape Reel  
(2) TM3: TO-251, TMS: TO-251S, S08: SOP-8  
(3) G: Halogen Free and Lead Free, L: Lead Free  
(3)Green Package  
www.unisonic.com.tw  
1 of 9  
Copyright © 2020 Unisonic Technologies Co., Ltd  
QW-R209-303.B  
UT60N04  
Power MOSFET  
MARKING  
TO-251 / TO-251S  
UTC  
SOP-8  
8
7
6
5
Date Code  
UTC  
UT60N04  
L: Lead Free  
UT60N04  
L: Lead Free  
G: Halogen Free  
G: Halogen Free  
Lot Code  
Date Code  
Lot Code  
1
2
1
3
4
UNISONICTECHNOLOGIESCO.,LTD  
2 of 9  
Ver.A  
www.unisonic.com.tw  
UT60N04  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
40  
±20  
V
Continuous (VGS=10V)  
Pulsed (Note 2)  
60  
A
Drain Current  
IDM  
120  
A
Avalanche Energy  
Single Pulsed (Note 3)  
EAS  
57  
mJ  
V/ns  
W
Peak Diode Recovery dv/dt (Note 4)  
dv/dt  
4.5  
TO-251/TO-251S  
SOP-8  
50  
Power Dissipation  
PD  
1.8  
W
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
°C  
°C  
TSTG  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating: Pulse width limited by maximum junction temperature.  
3. L=0.1mH, IAS=33.8A, VDD=25V, RG=25Ω, Starting TJ=25°С  
4. ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C  
THERMAL DATA (NOTE)  
PARAMETER  
SYMBOL  
RATING  
50  
UNIT  
°C/W  
TO-251/TO-251S  
SOP-8  
Junction to Ambient  
Junction to Case  
θJA  
90  
TO-251/TO-251S  
SOP-8  
2.5  
θJC  
°C/W  
69  
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.  
UNISONICTECHNOLOGIESCO.,LTD  
3 of 9  
Ver.A  
www.unisonic.com.tw  
UT60N04  
Power MOSFET  
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS  
IDSS  
VGS=0V, ID=250µA  
40  
V
VDS=40V, VGS=0V  
VGS=+20V, VDS=0V  
VGS=-20V, VDS=0V  
1
µA  
Forward  
+100 nA  
-100 nA  
Gate- Source Leakage Current  
IGSS  
Reverse  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250µA  
VGS=4.5V, ID=20A  
VGS=10V, ID=30A  
1.0  
3.0  
V
11.5 mΩ  
8.0 mΩ  
Static Drain-Source On-State Resistance  
DYNAMIC PARAMETERS  
Input Capacitance  
CISS  
COSS  
CRSS  
1200  
215  
pF  
pF  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge  
VGS=0V, VDS=20V, f=1.0MHz  
160  
QG  
QGS  
QGD  
tD(ON)  
tR  
25  
3
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VDS=20V, VGS=10V, ID=60A  
IG=1mA (Note 2)  
Gate to Source Charge  
Gate to Drain Charge  
Turn-ON Delay Time  
Rise Time  
6
10  
21  
150  
90  
VDD=20V, VGS=60V, ID=25A,  
RG=25Ω, (Note 2)  
Turn-OFF Delay Time  
Fall-Time  
tD(OFF)  
tF  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Maximum Continuous Drain-Source Diode  
Forward Current  
IS  
60  
A
A
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
120  
1.4  
Drain-Source Diode Forward Voltage  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
VSD  
trr  
IS=50A,VGS=0V  
V
40  
25  
ns  
nC  
IF=30A,VGS=0V, di/dt=100A/µs  
Qrr  
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.  
2. Essentially independent of operating ambient temperature.  
UNISONICTECHNOLOGIESCO.,LTD  
4 of 9  
Ver.A  
www.unisonic.com.tw  
UT60N04  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS  
+
DUT  
VDS  
RG  
L
-
ISD  
VGS  
VDD  
Driver  
Same Type  
as DUT  
dv/dt controlled by RG  
ISD controlled by pulse period  
Gate Pulse Width  
D=  
VGS  
Gate Pulse Period  
10V  
(Driver)  
IFM, Body Diode Forward Current  
ISD  
di/dt  
(DUT)  
IRM  
Body Diode Reverse Current  
VDS  
(DUT)  
Body Diode Recovery dv/dt  
VSD  
VDD  
Body Diode Forward  
Voltage Drop  
Peak Diode Recovery dv/dt Test Circuit and Waveforms  
UNISONICTECHNOLOGIESCO.,LTD  
5 of 9  
Ver.A  
www.unisonic.com.tw  
UT60N04  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS  
VGS  
Same Type  
as DUT  
QG  
VDS  
QGS  
QGD  
VGS  
DUT  
Charge  
Gate Charge Waveforms  
Gate Charge Test Circuit  
VDS  
90%  
RG  
RD  
VDS  
VGS  
10%  
VGS  
DUT  
tR  
td(OFF)  
td(ON)  
tON  
Resistive Switching Waveforms  
tF  
tOFF  
Resistive Switching Test Circuit  
1
2
BVDSS  
BVDSS-VDD  
VDS  
2
EAS  
=
LIAS  
BVDSS  
RG  
ID  
IAS  
L
ID(t)  
DUT  
tP  
VDD  
VDD  
VDS(t)  
Time  
tP  
Unclamped Inductive Switching Waveforms  
Unclamped Inductive Switching Test Circuit  
UNISONICTECHNOLOGIESCO.,LTD  
6 of 9  
Ver.A  
www.unisonic.com.tw  
UT60N04  
Power MOSFET  
TYPICAL CHARACTERISTICS  
Drain Current vs. Drain-Source  
Voltage  
Note:  
Drain-Source On-Resistance vs.  
Gate-Source Voltage  
120  
100  
80  
100  
80  
Note:  
1.TA=25°C  
2.Pulse test  
1.TA=25°C  
2.Pulse test  
4V  
3.5V  
60  
VGS=5~10V  
60A  
60  
40  
20  
0
3V  
40  
20  
0
2.5V  
ID=30A  
2
4
6
10  
8
0
200 400 600 800 1000 1200  
Drain-Source Voltage, VDS (V)  
Gate-Source Voltage, VGS (V)  
Capacitance Characteristics  
Gate Charge Characteristics  
10000  
12  
10  
8
VDS=20V  
VGS=10V  
ID=60A  
Pulsed  
CISS  
1000  
100  
10  
6
4
2
0
COSS  
CRSS  
0
10  
20  
40  
30  
0
10  
20  
40  
30  
Total Gate Charge, QG (nC)  
Drain-Source Voltage, VDS (V)  
Drain-Source On-Resistance vs.  
Junction Temperature  
Drain-Source On-Resistance vs.  
Junction Temperature  
16  
13  
11  
9
VGS=10V  
ID=30A  
Pulsed  
VGS=4.5V  
ID=20A  
14 Pulsed  
12  
10  
8
7
5
6
50  
75  
100  
125  
150  
25  
50  
Junction Temperature, TJ (°C)  
75  
100  
125  
150  
25  
Junction Temperature, TJ (°C)  
UNISONICTECHNOLOGIESCO.,LTD  
7 of 9  
Ver.A  
www.unisonic.com.tw  
UT60N04  
Power MOSFET  
TYPICAL CHARACTERISTICS (Cont.)  
Breakdown Voltage vs. Junction  
Temperature  
Gate Threshold Voltage vs.  
Junction Temperature  
1.2  
1.1  
1
1.4  
1.2  
ID=0.25mA  
Pulsed  
ID=0.25mA  
Pulsed  
0.9  
0.8  
1
0.7  
0.6  
0.5  
0.8  
25  
50  
75  
100  
125  
150  
25  
50  
75  
100  
125  
150  
Junction Temperature, TJ (°C)  
Junction Temperature, TJ (°C)  
Drain Current vs. Gate-Source  
Voltage  
Source Current vs. Source-Drain  
Voltage  
120  
80  
TA=25°C  
Pulsed  
100  
TA=150°C  
25°C  
10  
40  
0
1
0.1  
0
2
4
8
0.6  
0.7 0.8  
0.9  
1
6
0.3 0.4 0.5  
Source-Drain Voltage, VSD (V)  
Gate-Source Voltage, VGS (V)  
Power Dissipation vs. Junction  
Temperature  
Drain-Source On-Resistance vs.  
Drain Current  
9
8
7
6
5
2
TA=25°C  
VGS=10V  
Pulsed  
SOP-8  
1.5  
1
0.5  
0
0
25  
50  
75 100 125 150  
0
20  
40  
60  
80 100 120  
Junction Temperature, TJ (°C)  
Drain Current, ID (A)  
UNISONICTECHNOLOGIESCO.,LTD  
8 of 9  
Ver.A  
www.unisonic.com.tw  
UT60N04  
Power MOSFET  
TYPICAL CHARACTERISTICS (Cont.)  
Drain Current vs. Junction  
Temperature  
Safe Operating Area  
60  
MAX  
100  
10  
100us  
1ms  
40  
20  
0
10ms  
1
0.1  
Operation in this  
area is limited by  
RDS(ON)  
SOP-8  
TJ=150°C  
TC=25°C  
Single Pulse  
DC  
0.01  
1
10  
1000  
0.1  
50  
75  
100  
150  
25  
125  
Drain-Source Voltage, VDS (V)  
Junction Temperature, TJ (°C)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all UTC products described or contained herein.  
UTC products are not designed for use in life support appliances, devices or systems where malfunction  
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in  
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to  
make changes to information published in this document, including without limitation specifications and  
product descriptions, at any time and without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
UNISONICTECHNOLOGIESCO.,LTD  
9 of 9  
Ver.A  
www.unisonic.com.tw  

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