UT60N03L-TND-R [UTC]
Power Field-Effect Transistor;
| 型号： | UT60N03L-TND-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总6页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT60N03
Power MOSFET
30V, 60A N-CHANNEL LOGIC
LEVEL MOSFET
1
1
DESCRIPTION
TO-220
TO-251
This device employs advanced MOSFET technology and features
low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the
overall efficiency of DC/DC converters and allows operation to higher
switching frequencies.
1
1
TO-252D
TO-252
FEATURES
* RDS(ON) < 23mΩ @ VGS=10V, ID=30A
* RDS(ON) < 30mΩ @ VGS=4.5V, ID=19A
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
2
3
S
S
S
S
UT60N03L-TA3-T
UT60N03L-TM3-T
UT60N03G-TA3-T
UT60N03G-TM3-T
UT60N03G-TN3-R
UT60N03G-TND-R
TO-220
TO-251
TO-252
TO-252D
G
G
G
G
D
D
D
D
Tube
Tube
UT60N03L-TN3-R
Tape Reel
Tape Reel
UT60N03L-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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QW-R502-237.E
UT60N03
Power MOSFET
MARKING
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UT60N03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
30
UNIT
Drain-Source Voltage
V
V
A
Gate-Source Voltage
VGSS
ID
±20
Continuous Drain Current (VGS=10V)
60
TO-220
60
Power Dissipation
W
TO-251/TO-252
45
PD
TO-220
0.4
Derate above 25°C
W/°C
TO-251/TO-252
0.37
+150
-55 ~ +150
Junction Temperature
Storage Temperature
TJ
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220
Junction to Ambient
Junction to Case
θJA
TO-251/TO-252
TO-220
100
2.5
θJC
°C/W
TO-251/TO-252
2.73
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UT60N03
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS VGS=0V, ID=250µA
30
V
IDSS
IGSS
VDS=25V, VGS=0V
VDS=0V, VGS=±20V
1
µA
±100 nA
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
1
3
V
VGS=10V, ID=30A
RDS(ON)
14
24
23
30
Static Drain-Source On-Resistance
mΩ
VGS=4.5V, ID=19A
DYNAMIC PARAMETERS
Input Capacitance
CISS
900
210
90
pF
pF
pF
VDS=15V, VGS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Time
COSS
CRSS
t(ON)
tD(ON)
tR
90
83
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Time
11
49
VDD=15V, ID=7.9A, RL=18ꢀ, VGS=4.5V
t(OFF)
tD(OFF)
tF
Turn-OFF Delay Time
Turn-OFF Fall-Time
Turn-ON Time
27
28
t(ON)
tD(ON)
tR
48
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Time
6
26
VDD=15V, ID=7.9A, RL=18ꢀ, VGS=10V
t(OFF)
tD(OFF)
tF
120
Turn-OFF Delay Time
Turn-OFF Fall-Time
52
28
18
9.6
5V
Total Gate Charge
10V
VGS=0V~5V,VDD=15V,ID=19A IG=1.0mA
VGS=0V~10V,VDD=15V,ID=19A,IG=1.0mA
28
14
QG
nC
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG(TH) VGS=0V~1V,VDD=15V,ID=19A IG=1.0mA
1.0 1.5
3.4
nC
nC
nC
QGS
VDD=15V, ID=19A IG=1.0mA
QGD
3.4
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
ISD=19A
1.25
1.0
58
Drain-Source Diode Forward Voltage
VSD
V
ISD=10A
Reverse Recovery Time
Reverse Recovery Charge
trr
ns
I
SD=9A, dIS/dt =100A/s,
QRR
70
nC
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UT60N03
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
Switching Time Waveforms
12
10
8
VDS
90%
6
10%
4
VGS
tD(ON)
tD(OFF)
2
tTHL
tTLH
0
200
400
600
800
0
Source to Drain Voltage,VSD (mV)
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UT60N03
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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