UT60N04L-TMS-T [UTC]
Power Field-Effect Transistor,;型号: | UT60N04L-TMS-T |
厂家: | Unisonic Technologies |
描述: | Power Field-Effect Transistor, |
文件: | 总9页 (文件大小:421K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT60N04
Power MOSFET
60A, 40V N-CHANNEL
POWER MOSFET
1
1
DESCRIPTION
The UTC UT60N04 is a N-channel enhancement MOSFET using
UTC’s advanced technology to provide the customers with perfect
RDS(ON) and high switching speed.
TO-251
TO-251S
The UTC UT60N04 is suitable for all commercial-industrial
applications at power dissipation levels to approximately 50 watts,
etc.
SOP-8
FEATURES
* RDS(ON) ≤ 11.5 mΩ @ VGS=4.5V, ID=20A
RDS(ON) ≤ 8.0 mΩ @ VGS=10V, ID=30A
* High Switching Speed
SYMBOL
Drain
Gate
Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
G
G
S
2
3
S
S
S
4
-
5
-
6
-
7
-
8
-
UT60N04L-TM3-T
UT60N04G-TM3-T
UT60N04G-TMS-T
UT60N04G-S08-R
G: Gate D: Drain
TO-251
TO-251S
SOP-8
D
D
S
Tube
Tube
UT60N04L-TMS-T
UT60N04L-S08-R
-
-
-
-
-
G
D
D
D
D Tape Reel
Note: Pin Assignment: Source
UT60N04G-TM3-T
(1)Packing Type
(2)Package Type
(1) T: Tube, R: Tape Reel
(2) TM3: TO-251, TMS: TO-251S, S08: SOP-8
(3) G: Halogen Free and Lead Free, L: Lead Free
(3)Green Package
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Copyright © 2020 Unisonic Technologies Co., Ltd
QW-R209-303.B
UT60N04
Power MOSFET
MARKING
TO-251 / TO-251S
UTC
SOP-8
8
7
6
5
Date Code
UTC
UT60N04
L: Lead Free
UT60N04
L: Lead Free
G: Halogen Free
G: Halogen Free
Lot Code
Date Code
Lot Code
1
2
1
3
4
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UT60N04
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
40
±20
V
Continuous (VGS=10V)
Pulsed (Note 2)
60
A
Drain Current
IDM
120
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
57
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
TO-251/TO-251S
SOP-8
50
Power Dissipation
PD
1.8
W
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
°C
°C
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=0.1mH, IAS=33.8A, VDD=25V, RG=25Ω, Starting TJ=25°С
4. ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA (NOTE)
PARAMETER
SYMBOL
RATING
50
UNIT
°C/W
TO-251/TO-251S
SOP-8
Junction to Ambient
Junction to Case
θJA
90
TO-251/TO-251S
SOP-8
2.5
θJC
°C/W
69
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
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UT60N04
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=250µA
40
V
VDS=40V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
1
µA
Forward
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=4.5V, ID=20A
VGS=10V, ID=30A
1.0
3.0
V
11.5 mΩ
8.0 mΩ
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
1200
215
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
VGS=0V, VDS=20V, f=1.0MHz
160
QG
QGS
QGD
tD(ON)
tR
25
3
nC
nC
nC
ns
ns
ns
ns
VDS=20V, VGS=10V, ID=60A
IG=1mA (Note 2)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
6
10
21
150
90
VDD=20V, VGS=60V, ID=25A,
RG=25Ω, (Note 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
60
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
120
1.4
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
trr
IS=50A,VGS=0V
V
40
25
ns
nC
IF=30A,VGS=0V, di/dt=100A/µs
Qrr
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
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UT60N04
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
IFM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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UT60N04
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
VDS
QGS
QGD
VGS
DUT
Charge
Gate Charge Waveforms
Gate Charge Test Circuit
VDS
90%
RG
RD
VDS
VGS
10%
VGS
DUT
tR
td(OFF)
td(ON)
tON
Resistive Switching Waveforms
tF
tOFF
Resistive Switching Test Circuit
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
RG
ID
IAS
L
ID(t)
DUT
tP
VDD
VDD
VDS(t)
Time
tP
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
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UT60N04
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Voltage
Note:
Drain-Source On-Resistance vs.
Gate-Source Voltage
120
100
80
100
80
Note:
1.TA=25°C
2.Pulse test
1.TA=25°C
2.Pulse test
4V
3.5V
60
VGS=5~10V
60A
60
40
20
0
3V
40
20
0
2.5V
ID=30A
2
4
6
10
8
0
200 400 600 800 1000 1200
Drain-Source Voltage, VDS (V)
Gate-Source Voltage, VGS (V)
Capacitance Characteristics
Gate Charge Characteristics
10000
12
10
8
VDS=20V
VGS=10V
ID=60A
Pulsed
CISS
1000
100
10
6
4
2
0
COSS
CRSS
0
10
20
40
30
0
10
20
40
30
Total Gate Charge, QG (nC)
Drain-Source Voltage, VDS (V)
Drain-Source On-Resistance vs.
Junction Temperature
Drain-Source On-Resistance vs.
Junction Temperature
16
13
11
9
VGS=10V
ID=30A
Pulsed
VGS=4.5V
ID=20A
14 Pulsed
12
10
8
7
5
6
50
75
100
125
150
25
50
Junction Temperature, TJ (°C)
75
100
125
150
25
Junction Temperature, TJ (°C)
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UT60N04
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Breakdown Voltage vs. Junction
Temperature
Gate Threshold Voltage vs.
Junction Temperature
1.2
1.1
1
1.4
1.2
ID=0.25mA
Pulsed
ID=0.25mA
Pulsed
0.9
0.8
1
0.7
0.6
0.5
0.8
25
50
75
100
125
150
25
50
75
100
125
150
Junction Temperature, TJ (°C)
Junction Temperature, TJ (°C)
Drain Current vs. Gate-Source
Voltage
Source Current vs. Source-Drain
Voltage
120
80
TA=25°C
Pulsed
100
TA=150°C
25°C
10
40
0
1
0.1
0
2
4
8
0.6
0.7 0.8
0.9
1
6
0.3 0.4 0.5
Source-Drain Voltage, VSD (V)
Gate-Source Voltage, VGS (V)
Power Dissipation vs. Junction
Temperature
Drain-Source On-Resistance vs.
Drain Current
9
8
7
6
5
2
TA=25°C
VGS=10V
Pulsed
SOP-8
1.5
1
0.5
0
0
25
50
75 100 125 150
0
20
40
60
80 100 120
Junction Temperature, TJ (°C)
Drain Current, ID (A)
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UT60N04
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Drain Current vs. Junction
Temperature
Safe Operating Area
60
MAX
100
10
100us
1ms
40
20
0
10ms
1
0.1
Operation in this
area is limited by
RDS(ON)
SOP-8
TJ=150°C
TC=25°C
Single Pulse
DC
0.01
1
10
1000
0.1
50
75
100
150
25
125
Drain-Source Voltage, VDS (V)
Junction Temperature, TJ (°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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