UT70N03G-TN3-R [UTC]

N-CHANNEL ENHANCEMENT MODE; N沟道增强模式


型号：	UT70N03G-TN3-R
厂家：	Unisonic Technologies
描述：	N-CHANNEL ENHANCEMENT MODE N沟道增强模式
文件：	总3页 (文件大小：146K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UT70N03

Preliminary

Power MOSFET

N-CHANNEL ENHANCEMENT

MODE

DESCRIPTION

The UT70N03 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

FEATURES

* R_DS(ON)< 9mΩ @ V_GS=10V, I_D=33A

* R_DS(ON)< 18mΩ @ V_GS=4.5V, I_D=20A

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

UT70N03L-TM3-T

UT70N03L-TN3-T

UT70N03L-TN3-R

UT70N03G-TM3-T

UT70N03G-TN3-T

UT70N03G-TN3-R

TO-251

TO-252

Tube

Tape Reel

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UT70N03

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A=25℃, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

±20

I_DM

195

P_D

Linear Derating Factor

Junction Temperature

Storage Temperature

0.36

W/°C

℃

T_J

+150

-55 ~ +150

T_STG

℃

Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

SYMBOL

θ_JA

RATINGS

110

UNIT

℃/W

θ_JC

2.8

ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

ON CHARACTERISTICS

BV_DSS

I_DSS

V_GS=0V, I_D=250µA

V_DS=30V, V_GS=0V

V_GS=±20V

µA

I_GSS

±100 nA

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

g_FS

V_DS=V_GS, I_D=250µA

mΩ

V_GS=10V, I_D=33A

Static Drain-Source On-Resistance

V_GS=4.5V, I_D=20A

V_DS=10V, I_D=33A

Forward Transconductance

DYNAMIC PARAMETERS

Input Capacitance

C_ISS

C_OSS

C_RSS

1485

245

V_DS=25V, V_GS=0V,

f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

170

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

16.5

V_DS=20V, V_GS=4.5V,

I_D=33A

Gate Source Charge

Gate Drain Charge

10.3

8.2

Turn-ON Delay Time

Turn-ON Rise Time

105

21.4

8.5

V_GS=10V, V_DS=15V, I_D=33A,

R_D=0.45ꢀ, R_G=3.3ꢀ

Turn-OFF Delay Time

Turn-OFF Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage (Note 2)

V_SD

I_S

I_S=60A, V_GS=0V

V_D=V_G=0V, V_S=1.3V

(Note 1)

1.3

Maximum Body-Diode Continuous Current

Pulsed Source Current (Body Diode)

I_SM

195

Note :1. Pulse width limited by safe operating area.

Note :2. Pulse width < 300us, duty cycle < 2%.

UNISONIC TECHNOLOGIES CO., LTD

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UT70N03

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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