UT9435G-S08-R [UTC]
Power Field-Effect Transistor, 4.2A I(D), 30V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8;型号: | UT9435G-S08-R |
厂家: | Unisonic Technologies |
描述: | Power Field-Effect Transistor, 4.2A I(D), 30V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 开关 脉冲 光电二极管 晶体管 |
文件: | 总4页 (文件大小:186K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT9435
Power MOSFET
P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UT9435 is P-Channel Power MOSFET, designed with
high density cell with fast switching speed, ultra low
on-resistance, and excellent thermal and electrical capabilities.
Used in commercial and industrial surface mount applications
and suited for low voltage applications such as DC/DC
converters.
SYMBOL
2.Drain
Lead-free:
UT9435L
Halogen-free: UT9435G
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
UT9435L-AB3-R
UT9435L-TN3-R
UT9435L-S08-R
Halogen Free
UT9435G-AB3-R
UT9435G-TN3-R
UT9435G-S08-R
1
2
3
S
S
S
4
-
5
-
6
-
7
-
8
-
UT9435-AB3-R
UT9435-TN3-R
UT9435-S08-R
SOT-89
TO-252
SOP-8
G D
G D
Tape Reel
Tape Reel
Tape Reel
-
-
-
-
-
G D
S
S
D D D
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Copyright © 2009 Unisonic Technologies Co., Ltd
QW-R502-155.C
UT9435
Power MOSFET
PIN CONFIGURATION
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-155.C
UT9435
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-30
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
V
A
A
±20
Continuous Drain Current
-4.2
Pulsed Drain Current (Note 1, 2)
IDM
-20
SOT-89
SOP-8
TO-252
1.25
2.5
Power Dissipation (Ta=25℃)
PD
W
Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature
PD
TJ
12.5
+150
W
°C
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
100
UNIT
°C/W
SOT-89
TO-252
SOP-8
Junction to Ambient (Note 3)
θJA
110
50
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
VGS =0 V, ID =-250 uA
VDS=-30V, VGS=0V
VGS= ±20V
-30
V
-1
uA
IGSS
±100 nA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25℃, ID=-1mA
-0.1
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=-250uA
VGS=-10V, ID=-4A
VGS=-4.5V, ID=-2A
-1
-3
50
90
V
mΩ
mΩ
Static Drain-Source On-Resistance (Note 2)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
520 830
180
pF
pF
pF
VGS=0V,VDS=-25V,f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 2)
Gate-Source Charge
130
QG
QGS
QGD
tD(ON)
tR
10
2
16
nC
nC
nC
ns
ns
ns
ns
VDS=-25V, VGS=-4.5V, ID=-4A
Gate-Drain Charge
6
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
10
7
48
40
VDS=-15V,ID=-1A, RG=3.3Ω,
VGS=-10V,RD=15Ω
Turn-OFF Delay Time
tD(OFF)
tF
26
14
292
112
Turn-OFF Fall Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VSD
tRR
IS=-1A, VGS=0V
IS=-4A, VGS=0V,
dI/dt=-100A/μs
-1.3
V
30
24
ns
nC
Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300µs , duty cycle ≤2%.
3. Surface mounted on 1 in 2 copper pad of FR4 board, t≤10s.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-155.C
UT9435
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
Drain-Source On-State Resistance Characteristics
6
1.2
1.0
0.8
5
VGS=-10V,
ID=-4A
4
3
0.6
0.4
0.2
2
VGS=-4.5V,
ID=-2A
1
0
0
50
150
0
100
200
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
Drain to Source Voltage, VDS (mV)
Drain Current vs.
Drain-Source Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
450
400
350
300
250
200
150
100
50
300
250
200
150
100
50
0
0
2.0
0
0.5
1.0
1.5
0
20
30
40
50
10
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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