UT9435HG-AG6-R [UTC]
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,;型号: | UT9435HG-AG6-R |
厂家: | Unisonic Technologies |
描述: | Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 开关 光电二极管 晶体管 |
文件: | 总5页 (文件大小:244K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT9435H
Power MOSFET
P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UTC UT9435H provide excellent RDS(ON), low gate
charge and fast switching speed. It has been optimized for
power management applications.
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
G
S
S
S
D
2
D
S
S
G
D
3
S
S
S
D
G
4
-
5
-
6
-
7
-
8
-
UT9435HL-AA3-R
UT9435HL-S08-R
UT9435HL-S08-T
UT9435HL-AE3-R
UT9435HL-AG6-R
UT9435HG-AA3-R
UT9435HG-S08-R
UT9435HG-S08-T
UT9435HG-AE3-R
UT9435HG-AG6-R
SOT-223
SOP-8
Tape Reel
Tape Reel
Tube
G
G
-
D
D
-
D
D
-
D
D
-
D
D
-
SOP-8
SOT-23
SOT-26
Tape Reel
Tape Reel
S
D
D
-
-
www.unisonic.com.tw
1 of 6
Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-131.D
UT9435H
Power MOSFET
PIN CONFIGURATION
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R502-131.D
www.unisonic.com.tw
UT9435H
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDS
RATING
-30
UNITS
Drain-Source Voltage
V
V
A
A
Gate-Source Voltage
VGS
±20
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 1, 2)
TA=125°C
ID
±5.3
±20
IDM
SOT-223/SOP-8
(Note 4)
2.5
Power Dissipation
PD
W
SOT-23
0.38
0.48
SOT-26
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATING
50
UNIT
°C/W
SOT-223/SOP-8
(Note 4)
Junction to Ambient
θJA
SOT-23
325
260
SOT-26
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS =0 V, ID =-250 µA
VDS =-24 V, VGS =0 V
VDS =0 V, VGS = ±20V
-30
V
-1
µA
nA
IGSS
±100
Gate Threshold Voltage
VGS(TH)
RDS(ON)
ID(ON)
VDS =VGS, ID =-250 µA
VGS =-10V, ID =-5.3A
VGS =-4.5V, ID =-4.2A
VDS = -5V, VGS =-10V
-1
-3
50
90
V
mΩ
mΩ
A
44
74
Drain-Source On-State Resistance (Note 2)
On State Drain Current
-20
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
1040
420
pF
pF
pF
VDS =-15V, VGS =0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
150
tD(ON)
tR
tD(OFF)
tF
19
9
26
13
ns
ns
VDD =-15V, ID=-1A,
VGEN =-10V, RG =6ꢀ
Turn-OFF Delay Time
74
36
22.5
2
105
50
ns
Turn-OFF Fall Time
ns
Total Gate Charge (Note 2)
Gate-Source Charge
QG
29
nC
nC
nC
VDS =-15V, VGS =-10V,
ID =-4.6A
QGS
QGD
Gate-Drain Charge
6
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note 2)
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
VSD
VGS =0V, IS =-5.3A
-0.84 -1.3
V
3. Surface mounted on 1 in2 copper pad of FR4 board
4. When mounted on 1 inch square copper board.
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R502-131.D
www.unisonic.com.tw
UT9435H
Power MOSFET
TYPICAL CHARACTERISTICS
On-Rseistance Variation with Drain
Current and Temperature
Capacitance
0.18
0.15
0.12
1500
VGS=-10V
1250
1000
CISS
750
500
0.09
TJ=25℃
0.06
0.03
0.00
COSS
CRSS
250
0
0
5
10
15
20
25
30
0
5
7.5
10
2.5
Drain-to-Source Voltage,-VDS (V)
Drain Current,-ID (A)
UNISONIC TECHNOLOGIECO., LTD
of 5
QW-R52-31.D
www.unisonic.com.tw
UT9435H
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Maximum Safe Operating Area
Gate Charge
50
10
10
8
VDS=-15V
ID=-5.3A
10ms
100ms
1s
RDS(ON) Limited
6
1
DC
4
2
0
VGS=-10V
Single Pulse
TA=25℃
0.1
0.03
0
3
6
9
12 15 18 21 24
0.1
1
10
30 50
Total Gate Charge,QG (nC)
Drain-to-Source Voltage,-VDS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
QW-R502-131.D
www.unisonic.com.tw
相关型号:
UT9435HL-AE3-R
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3
UTC
UT9435HL-AG6-R
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-6
UTC
UT9435HZG-AE3-R
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-59, 3 PIN
UTC
©2020 ICPDF网 联系我们和版权申明