UT9435 [UTC]

P-CHANNEL ENHANCEMENT MODE;
UT9435
型号: UT9435
厂家: Unisonic Technologies    Unisonic Technologies
描述:

P-CHANNEL ENHANCEMENT MODE

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UNISONIC TECHNOLOGIES CO., LTD  
UT9435  
Power MOSFET  
P-CHANNEL  
ENHANCEMENT MODE  
„
DESCRIPTION  
The UT9435 is P-Channel Power MOSFET, designed with  
high density cell with fast switching speed, ultra low  
on-resistance, and excellent thermal and electrical capabilities.  
Used in commercial and industrial surface mount applications  
and suited for low voltage applications such as DC/DC  
converters.  
„
SYMBOL  
2.Drain  
Lead-free:  
UT9435L  
Halogen-free: UT9435G  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
UT9435L-AB3-R  
UT9435L-TN3-R  
UT9435L-S08-R  
Halogen Free  
UT9435G-AB3-R  
UT9435G-TN3-R  
UT9435G-S08-R  
1
2
3
S
S
S
4
-
5
-
6
-
7
-
8
-
UT9435-AB3-R  
UT9435-TN3-R  
UT9435-S08-R  
SOT-89  
TO-252  
SOP-8  
G D  
G D  
Tape Reel  
Tape Reel  
Tape Reel  
-
-
-
-
-
G D  
S
S
D D D  
www.unisonic.com.tw  
1 of 4  
Copyright © 2009 Unisonic Technologies Co., Ltd  
QW-R502-155.C  
UT9435  
Power MOSFET  
„
PIN CONFIGURATION  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
www.unisonic.com.tw  
QW-R502-155.C  
UT9435  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TA=25)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
-30  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
A
A
±20  
Continuous Drain Current  
-4.2  
Pulsed Drain Current (Note 1, 2)  
IDM  
-20  
SOT-89  
SOP-8  
TO-252  
1.25  
2.5  
Power Dissipation (Ta=25)  
PD  
W
Power Dissipation (Tc=25)  
Junction Temperature  
Storage Temperature  
PD  
TJ  
12.5  
+150  
W
°C  
TSTG  
-55 ~ +150  
°C  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
100  
UNIT  
°C/W  
SOT-89  
TO-252  
SOP-8  
Junction to Ambient (Note 3)  
θJA  
110  
50  
„
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
BVDSS  
IDSS  
VGS =0 V, ID =-250 uA  
VDS=-30V, VGS=0V  
VGS= ±20V  
-30  
V
-1  
uA  
IGSS  
±100 nA  
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25, ID=-1mA  
-0.1  
V/℃  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=-250uA  
VGS=-10V, ID=-4A  
VGS=-4.5V, ID=-2A  
-1  
-3  
50  
90  
V
mΩ  
mΩ  
Static Drain-Source On-Resistance (Note 2)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
CISS  
COSS  
CRSS  
520 830  
180  
pF  
pF  
pF  
VGS=0V,VDS=-25V,f=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Total Gate Charge (Note 2)  
Gate-Source Charge  
130  
QG  
QGS  
QGD  
tD(ON)  
tR  
10  
2
16  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VDS=-25V, VGS=-4.5V, ID=-4A  
Gate-Drain Charge  
6
Turn-ON Delay Time (Note 2)  
Turn-ON Rise Time  
10  
7
48  
40  
VDS=-15V,ID=-1A, RG=3.3,  
VGS=-10V,RD=15Ω  
Turn-OFF Delay Time  
tD(OFF)  
tF  
26  
14  
292  
112  
Turn-OFF Fall Time  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage  
Reverse Recovery Time  
VSD  
tRR  
IS=-1A, VGS=0V  
IS=-4A, VGS=0V,  
dI/dt=-100A/μs  
-1.3  
V
30  
24  
ns  
nC  
Reverse Recovery Charge  
QRR  
Notes: 1. Pulse width limited by TJ(MAX)  
2. Pulse width 300µs , duty cycle 2%.  
3. Surface mounted on 1 in 2 copper pad of FR4 board, t10s.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
www.unisonic.com.tw  
QW-R502-155.C  
UT9435  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
Drain Current vs. Source to Drain Voltage  
Drain-Source On-State Resistance Characteristics  
6
1.2  
1.0  
0.8  
5
VGS=-10V,  
ID=-4A  
4
3
0.6  
0.4  
0.2  
2
VGS=-4.5V,  
ID=-2A  
1
0
0
50  
150  
0
100  
200  
0
0.2  
0.4  
0.6  
0.8  
1.0  
Source to Drain Voltage, VSD (V)  
Drain to Source Voltage, VDS (mV)  
Drain Current vs.  
Drain-Source Breakdown Voltage  
Drain Current vs. Gate Threshold Voltage  
450  
400  
350  
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
0
0
2.0  
0
0.5  
1.0  
1.5  
0
20  
30  
40  
50  
10  
Gate Threshold Voltage, VTH (V)  
Drain-Source Breakdown Voltage, BVDSS(V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R502-155.C  
www.unisonic.com.tw  

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