UTC2SB772 [UTC]
MEDIUM POWER LOW VOLTAGE TRANSISTOR; 中功率低电压晶体管
| 型号： | UTC2SB772 |
| 厂家： | 
Unisonic Technologies |
| 描述： | MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SB772
PNPEPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
DESCRIPTION
The UTC 2SB772 is a medium power low voltage
transistor, designed for audio power amplifier, DC-DC
converter and voltage regulator.
FEATURES
1
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882
TO-126
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
VALUE
UNIT
V
V
-40
-30
-5
Collector-Emitter Voltage
Emitter-Base Voltage
V
Collector Dissipation( Tc=25°C)
Collector Dissipation( Ta=25°C)
Collector Current(DC)
Collector Current(PULSE)
Base Current
10
1
-3
-7
-0.6
W
W
A
A
A
Pc
Ic
Ic
IB
Junction Temperature
Storage Temperature
Tj
TSTG
150
-55 ~ +150
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note 1)
SYMBOL
ICBO
TEST CONDITIONS
VCB=-30V,IE=0
MIN TYP MAX UNIT
-1000
-1000
nA
nA
IEBO
hFE1
hFE2
VEB=-3V,Ic=0
VCE=-2V,Ic=-20mA
VCE=-2V,Ic=-1A
30
100
200
150
-0.3
-1.0
80
400
-0.5
-2.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(sat)
VBE(sat)
fT
Ic=-2A,IB=-0.2A
Ic=-2A,IB=-0.2A
VCE=-5V,Ic=-0.1A
VCB=-10V,IE=0,f=1MHz
V
V
MHz
pF
Cob
45
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R204-002,A
UTC2SB772
PNPEPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK
Q
P
E
RANGE
100-200
160-320
200-400
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.2 Derating curve of safe
Fig.1 Static characteristics
Fig.3 Power Derating
operating areas
150
12
8
1.6
-IB=9mA
-IB=8MA
-IB=7mA
100
1.2
-IB=6mA
-IB=5mA
0.8
-IB=4mA
50
4
0
-IB=3mA
0.4
-IB=2mA
-IB=1mA
0
0
0
4
8
12
16
20
-50
0
50
100
150
200
-50
0
50
100
150
200
-Collector-Emitter voltage(V)
Tc,Case Temperature(°C)
Tc,Case Temperature(°C)
Fig.4 Collector Output
capacitance
Fig.5 Current gain-
bandwidth product
Fig.6 Safe operating area
3
10
3
10
1
Ic(max),Pulse
10
1
0
1
m
m
S
S
Ic(max),DC
V
CE=5V
I
E=0
f=1MHz
2
2
0
10
10
10
I
B=8mA
1
1
10
-1
10
10
0
0
10
-2
10
10
0
-1
10
-2
10
-3
10
-2
10
-1
10
0
1
0
1
2
10
10
10
10
10
10
Collector-Emitter Voltage
Ic,Collector current(A)
-Collector-Base Voltage(v)
Fig.7 DC current gain
Fig.8 Saturation Voltage
3
4
10
10
V
CE=-2V
V
BE(sat)
3
10
2
10
2
10
VCE(sat)
1
10
1
10
0
0
10
10
0
10
1
2
3
4
0
1
2
3
4
10
10
10
10
10
10
10
10
10
-Ic,Collector current(mA)
-Ic,Collector current(mA)
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R204-002,A
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