UTCX0202A [UTC]
SCR; SCR
| 型号： | UTCX0202A |
| 厂家： | 
Unisonic Technologies |
| 描述： | SCR |
| 文件： | 总4页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC X0202/A
SCR
SENSITIVE SCRs
DESCRIPTION
The X0202/A SCR series is suitable for all applications
where the available gate current is limited, such as ground
fault circuit interruptors, overvoltage crowbar protection in
low power supplies, capacitive ignition circuit,……
1
FEATURES:
*IT(RMS) : 1.25A
*VDRM/VRRM :600/800V
TO-92
1:CATHODE 2:GATE 3:ANODE
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified )
PARAMETERS
SYMBOL
RATINGS
UNIT
V
Peak Repetitive Forward and Reverse Blocking Voltage
(Tj=110°C, RGK=1kΩ)
X0202
VDRM, VRRM
600
800
1.25
X0202A
RMS On-State Current
(TI=55°C)
(TI=55°C)
IT(RMS)
IT(AV)
ITSM
A
A
A
180°C conduction angle
Average On-State Current
180°C conduction angle
0.8
25
Non Repetitive Surge Peak on-state Current
(tp=8.3ms Tj=25°C)
Non Repetitive Surge Peak on-state Current
22.5
ITSM
I t
A
A2S
(tp=10ms Tj=25°C)
I t Value for fusing (tp=10ms Tj=25°C)
Critical Rate Of Rise Of On-state Current
IG=2*IGT,tr≤100ns, f=60Hz, Tj=125°C
2.5
50
dI/dt
A/µs
Peak Gate Current (p=20µs Tj=125°C)
Average Gate Power Dissipation (Tj=125°C)
Storage Junction Temperature Range
Operating Junction Temperature Range
IGM
PG(AV)
Tstg
Tj
1.2
0.2
-40~150
-40~125
A
W
°C
°C
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R301-005,A
UTC X0202/A
SCR
ELECTRICAL CHARACTERISTICS(Tj=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
VDRM=VRRM, RGK=1kΩ
Peak Forward or Reverse Blocking
5
µ A
µ A
I
DRM, IRRM
Current
Tj =25°C
500
Tj =125°C
1.45
200
0.8
Peak Forward On-State Voltage
Gate Trigger Current
VTM
IGT
VGT
ITM= 2.5A, tp=380µs
VD=12V, RL=140Ω
VD=12V, RL=140Ω
VD=VDRM, RL=3.3kΩ,RGK=1kΩ,
(Tj=125°C)
V
µ A
V
Gate Trigger Voltage
Gate Non-Trigger Voltage
0.1
VGD
V
IT=50mA, RGK=1kΩ
IG=1mA, RGK=1kΩ
VD=67%VDRM, RGK=1kΩ,
(Tj=110°C)
IRG=10µ A
(Tj=125°C)
5
6
Holding Current
Latch Current
IH
IL
mA
mA
Critical Rate of Rise of Off-State
10
8
dv/dt
V/µs
Voltage
Peak Reversed Gate Voltage
Threshold Voltage
VRG
VTO
Rd
V
V
mΩ
0.9
200
Dynamic Resistance
(Tj=125°C)
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-I)
PARAMETER
VALUE
60
150
UNIT
°C/W
°C/W
Junction to leads
Rth(j-a)
Junction to ambient
TYPICAL CHARACTERISTICS CURVE
Figure 1.Maximum Average Power Dissipation
Figure 2-1.Average and D.C. On-state Current
vs.Lead Temperature
vs. Average On-stage Current
P(W)
1.2
IT(av)(A)
1.4
1.2
α=180°
D.C.
1.0
1.0
0.8
0.8
0.6
α=180°
0.6
0.4
0.4
360°
0.2
0.2
0.0
α
Tlead (℃)
IT(av)(A)
0.0
0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
25
50
75
100
125
0
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R301-005,A
UTC X0202/A
SCR
Figure 2-2.Average and D.C. On-state Current
Figure 3. Relative Variation of Thermal
Impedance Junction to Ambient
vs.Pulse Duration
vs.Ambient Temperature(Device Mounted On
FR4 with Recomended Pad Layout)
1.4
1.2
1.0
1.0
0.8
0.6
0.4
0.2
0.0
D.C.
0.1
α=180°
tp(s)
Tlead(℃)
0.01
0
75
100
25
50
125
1E+2
1E-2
1E-1
1E+0
1E+1
5E+2
Figure 4.Relative Variation of Gate Trigger
Figure 5.Relative Variation of Holding Current
vs.Gate-cathode Resistance (typical values).
IH[Rgk]/IH[Rgk=1kΩ ]
Current,Holding Current and Latching Current
Versus Junction Temperature (typical values).
IGT,IH,IL[Tj]/GT,IH,IL[Tj]=25℃
1.50
1.25
4.0
3.5
3.0
2.5
2.0
Tj=25℃
1.00
0.75
0.50
IH&IL
(Rgk=1kΩ )
1.5
1.0
IGT
0.25
0.0
0.5
0.0
Rgk(kΩ )
Tj(℃)
-40
-20
0
20
40
60 80 100 120 140
1E-1
1E+0
1E+1
1E-2
Figure 6.Relative Variation of dV/dt immunity
vs.Gate-Cathode Resistance (typical values).
Figure 7.Relative Variation of dV/dt Immunity
vs Gate-cathode Capacitance (typical values).
dV/dt[Rgk]/dV/dt[Rgk=1kΩ ]
dV/dt[Rgk]/dV/dt[Rgk=1kΩ ]
10.0
20
18
Tj=125(℃)
VD=0.67*VDRM
Rgk=1kΩ )
Tj=125(℃)
VD=0.67*VDRM
16
14
12
10
8
1.0
0.1
6
4
2
0
Cgk(nF)
10 12 14 16 18 20 22
Rgk(kΩ )
2.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
2
4
6
8
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R301-005,A
UTC X0202/A
SCR
Figure 9.Non-repetitive Surge Peak on-state Current for
Figure 8.Surge Peak On-state
Current vs.Number of Cycles.
a Sinusoidal pulse with width tp<10ms,and
Corresponding Value of I t
ITSM(A),I2t(A2S)
ITSM(A)
25
300
100
Tjinital=25℃
dI/dt
Limitation
tp=10ms
one cycle
20
15
10
ITSM
Tjinitial=25(℃)
Nonrepetitive
10
1
Number of cycles
100
Tamb=25(℃)
Repetitive
5
0
I2t
tp(ms)
1000
0.01
0.10
1.00
10.00
10
1
Figure 10.On-state Characteristics (maximum values)
ITM(A)
3E+1
1E+1
Tj max
Vto=0.9V
Rd=200mΩ )
TJ=TJ max
1E+0
1E-1
VTM(V)
2.5
1.0 1.5
2.0
3.0
3.5 4.0
0.5
4.5
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
4
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R301-005,A
相关型号：
©2020 ICPDF网 联系我们和版权申明