UTD3055G-TN3-R [UTC]

POWER MOSFET 12 AMPS, 60 VOLTS N–CHANNEL DPAK; POWER MOSFET 12 AMPS ， 60伏N沟道DPAK


型号：	UTD3055G-TN3-R
厂家：	Unisonic Technologies
描述：	POWER MOSFET 12 AMPS, 60 VOLTS N–CHANNEL DPAK POWER MOSFET 12 AMPS ， 60伏N沟道DPAK
文件：	总4页 (文件大小：140K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UTD3055

Preliminary

Power MOSFET

POWER MOSFET 12 AMPS, 60

VOLTS N–CHANNEL DPAK

DESCRIPTION

The UTC UTD3055 is an N-channel Power MOSFET, and it can

withstand high energy in the avalanche and commutation modes.

The UTC UTD3055 is needed for applications, such as power

supplies, converters and power motor controls which require low

voltage and high speed switching. These devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

FEATURES

* I_DSSand V_DS(on)Specified At Elevated Temperature

* Avalanche Energy Specified

SYMBOL

Drain

Gate

Source

ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

TO-252

Packing

UTD3055G-TN3-R

Tape Reel

Note: D; Drain, G: Gate, S: Source

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UTD3055

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25°C unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_DGR

V_GS

RATINGS

UNIT

Drain-Source Voltage

Drain-Gate Voltage (R_GS=1.0MΩ)

Continuous

±20

±25

Gate-Source Voltage

Drain Current

Non-Repetitive (t_P≤10µs)

Continuous @ 25°C

V_GSM

I_D

Continuous @ 100°C

Single Pulse (t_P≤10µs)

I_D

7.3

I_DM

Single Pulse Drain–to–Source Avalanche

Energy – Starting T_J= 25°C

E_AS

(V_DD= 25 V, V_GS= 10 V, I_L= 12 A, L = 1.0 mH, R_G= 25 Ω )

Total Power Dissipation @ 25°C

P_D

Total Power Dissipation @ T_A= 25°C, when mounted to

minimum recommended pad size

1.75

Operating Junction Temperature

T_J

-55~175

°C

Storage Temperature

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

100

UNIT

W/°C

Junction to Ambient

Junction to Case

θ_JC

3.13

ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

I_D=250µA, V_GS=0V

Drain-Source Breakdown Voltage

BV_DSS

Temperature Coefficient (Positive)

V_DS=60V, V_GS=0V

mV/°C

Drain-Source Leakage Current

I_DSS

I_GSS

µA

V_DS=60V, V_GS=0V, T_J=150°C

100

Gate- Source Leakage Current

V_GS=±20V, V_DS=0

ON CHARACTERISTICS (Note)

V_DS=V_GS, I_D=250µA

2.0 2.7 4.0

5.4

Gate Threshold Voltage

V_GS(TH)

Temperature Coefficient (Negative)

mV/°C

Static Drain-Source On-State

Resistance

R_DS(ON)V_GS=10V, I_D=6.0A

0.10 0.15

Ω

I_D=12A

V_DS(on)

1.3 2.2

1.9

Drain-Source On-Votlage (V_GS=10V)

I_D=6.0A, T_J=150°C

Forward Transconductance

DYNAMIC PARAMETERS

Input Capacitance

g_FS

V_DS=7.0V, I_D=6.0A

4.0 5.0

C_ISS

C_OSS

C_RSS

410 500

130 180

V_GS=0V, V_DS=25V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Note: Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.

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UTD3055

Preliminary

Power MOSFET

ELECTRICAL CHARACTERISTICS (Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SWITCHING PARAMETERS (Note 2)

Q_T

Q₁

12.2 17

3.2

Gate Charge

_GS=10V, V_DS=48V, I_D=12A

Q₂

5.2

Q₃

5.5

Turn-ON Delay Time

Rise Time

t_D(ON)

t_R

t_D(OFF)

t_F

7.0

V_DD=30V, V_GS=10V, I_D=12A,

R_G=9.1Ω

Turn-OFF Delay Time

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

(Note 1)

I_S=12A, V_GS=0V

1.0 1.6

0.91

V_SD

I_S=12A, V_GS=0V, T_J=150°C

t_RR

t_A

µC

Reverse Recovery Time

I_S=12A, V_GS=0V, dIs/dt=100A/µs

t_B

Reverse Recovery Charge

Q_RR

0.128

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25’’

from package to center of die)

Internal Source Inductance

(Measured from the source lead 0.25,

from package to source bond pad)

L_D

L_S

4.5

7.5

Note: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.

2. Switching characteristics are independent of operating junction temperature.

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UTD3055

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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