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UTD20N03G-TN3-R [UTC]

N-CHANNEL ENHANCEMENT MODE POWER M OSFET; n沟道增强模式功秏OSFET
UTD20N03G-TN3-R
型号： UTD20N03G-TN3-R
厂家： Unisonic Technologies    Unisonic Technologies
描述：

N-CHANNEL ENHANCEMENT MODE POWER M OSFET
n沟道增强模式功秏OSFET
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中文：  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
UTD20N03  
Power MOSFET  
N-CHANNEL ENHANCEMENT  
MODE POWER M OSFET  
„
FEATURES  
* Ambient operating temperature: 175°C  
* Low drain-source and low on-resistance  
* Logic level  
* Perfect gate charge × RDS(ON) product  
* Superior thermal resistance  
* Avalanche rated  
* Specified dv/dt  
* For fast switching buck converters  
* Halogen free  
„
SYMBOL  
„ ORDERING INFORMATION  
Pin Assignment  
Ordering Number  
Package  
TO-252  
Packing  
1
2
3
UTD20N03G-TN3-R  
G
D
S
Tape Reel  
www.unisonic.com.tw  
1 of 3  
Copyright © 2009 Unisonic Technologies Co., Ltd  
QW-R502-342.A  
UTD20N03  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified))  
PARAMETER  
SYMBOL  
VDSS  
VGS  
ID  
RATINGS  
UNIT  
V
Drain-Source Voltage  
30  
Gate-Source Voltage  
±20  
V
Continuous Drain Current (TC=25°C)  
Pulsed Drain Current (TC=25°C)  
30  
A
IDM  
120  
A
Single Pulsed (Note 2)  
Repetitive (Note 3)  
EAS  
15  
mJ  
mJ  
kV/µs  
W
Avalanche Energy  
EAR  
dv/dt  
PD  
6
6
Peak Diode Recovery dv/dt (Note 4)  
Power Dissipation (TC=25°C)  
Junction Temperature  
60  
TJ  
+175  
-55 ~ +175  
°C  
°C  
Storage Temperature  
TSTG  
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. ID =15 A, VDD =25 V, RGS =25 Ω  
3. Repetitive Rating: Pulse width limited by TJ  
4. IS =30 A, VDS =24 V, di/dt =100A/µs,TJ(MAX) = 175 °C  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
MIN  
TYP  
1.7  
MAX  
100  
2.5  
UNIT  
°C/W  
°C/W  
Junction to Ambient  
Junction to Case  
θJC  
„
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
ON CHARACTERISTICS  
BVDSS VGS =0 V, ID =1 mA  
30  
V
IDSS  
IGSS  
VDS =30 V,VGS =0 V  
VGS =20 V, VDS =0 V  
0.01  
1
1
µA  
nA  
100  
Gate Threshold Voltage  
VGS(TH) VDS =VGS, ID =25µA  
1.2  
1.6  
2
V
VGS =4.5 V, ID =15 A  
RDS(ON)  
22.9  
15.5  
31  
20  
mΩ  
mΩ  
Drain-Source On-State Resistance  
VGS =10 V, ID =15 A  
DYNAMIC PARAMETERS  
Input Capacitance  
CISS  
530  
200  
60  
700  
275  
90  
pF  
pF  
pF  
Ω
VDS =25 V, VGS =0 V, f =1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
COSS  
CRSS  
RG  
1.3  
SWITCHING PARAMETERS  
Turn-ON Delay Time  
Turn-ON Rise Time  
tD(ON)  
tR  
tD(OFF)  
tF  
6.2  
11  
9.3  
17  
ns  
ns  
VDD =15 V, VGS =10 V,  
ID =15 A, RG =12.7 Ω  
Turn-OFF Delay Time  
Turn-OFF Fall-Time  
Total Gate Charge  
23  
34  
ns  
18  
27  
ns  
QG  
VDD =15 V, ID =15 A,VGS =5V  
VDD =15 V, ID =15 A  
8.4  
2.5  
6.4  
11  
nC  
nC  
nC  
Gate Source Charge  
Gate Drain Charge  
QGS  
QGD  
3.1  
9.6  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Inverse Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
Maximum Pulsed Drain-Source Diode  
Forward Current  
VSD  
IF =30 A, VGS =0 V  
1.1  
1.4  
30  
V
A
IS  
TC =25°C  
ISM  
120  
A
Reverse Recovery Time  
Reverse Recovery Charge  
tRR  
15  
2
18  
3
ns  
VR =15 V,IF = IS, dI/dt =100A/µs  
QRR  
nC  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R502-342.A  
www.unisonic.com.tw  
UTD20N03  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
Drain Current vs. Drain-Source  
Breakdown Voltage  
Drain Current vs. Gate Threshold  
Voltage  
300  
300  
250  
200  
250  
200  
150  
100  
50  
150  
100  
50  
0
0
0
10  
20  
30  
40  
0
0.5  
1.0  
1.5  
2.0  
Drain-Source Breakdown Voltage, BVDSS(V)  
Gate Threshold Voltage, VTH (V)  
Drain Current vs. Source to Drain  
Voltage  
Drain-Source On-State Resistance  
Characteristics  
12  
12  
10  
10  
8
VGS=10V  
ID=15A  
8
6
4
2
6
VGS=4.5V  
ID=15A  
4
2
0
0
200  
Drain to Source Voltage, VDS (mV)  
250  
0
50  
100  
150  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
Source to Drain Voltage, VSD (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R502-342.A  
www.unisonic.com.tw  

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