UTD36N03G-TN3-R [UTC]
N-CHANNEL ENHANCEMENT MODE;
| 型号： | UTD36N03G-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总5页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTD36N03
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
FEATURES
* RDS(ON) < 17mΩ @VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
1
2
D
D
D
3
S
S
S
Lead Free
Halogen Free
UTD36N03L-TA3-T
UTD36N03L-TN3-T
UTD36N03L-TN3-R
UTD36N03G-TA3-T
UTD36N03G-TN3-T
UTD36N03G-TN3-R
TO-220
TO-252
TO-252
G
G
G
Tube
Tube
Tape Reel
www.unisonic.com.tw
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Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R502-179.B
UTD36N03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
30
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
Continuous Drain Current
Pulsed Drain Current (Note 1)
43.4
A
IDM
173.6
1.9
A
TO-220
TO-252
W
W
°С
°С
Power Dissipation
PD
1.6
Junction Temperature
Storage Temperature
TJ
+175
-55 ~ +175
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
SYMBOL
RATINGS
62.5
UNIT
°С/W
°С/W
TO-220
TO-252
θJA
75
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS =0V, ID =250 µA
30
V
VDS =24V, VGS =0V
0.05
10
1
µA
nA
IGSS
VGS = ±20V, VGS =0V
100
Gate-Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250 µA
1
1.5
18
14
2
V
VGS =4.5V, ID =12A
22
17
Drain-Source On-State Resistance
mΩ
VGS=10 V, ID =25 A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
690
160
110
Output Capacitance
V
DS =25 V, VGS =0V, f=1.0MHz
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
6
10
VDS =15 V, VGS =10V,
RG =10ꢀ, RL =0.6 ꢀ
ns
Turn-OFF Delay Time
Turn-OFF Fall-Time
33
19
Total Gate Charge
QG
18.5
4.2
2.9
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
VDS =15V,VGS =10V,ID =36 A
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source
Diode Forward Current
VSD
IS=25A, VGS=0V
0.97
1.2
V
A
IS
43.4
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
173.6
Reverse Recovery Time
tRR
15
2
18
3
ns
VR=15V,IF=IS, dIF/dt=100A/μs
Reverse Recovery Charge
QRR
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R502-179.B
www.unisonic.com.tw
UTD36N03
Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R502-179.B
www.unisonic.com.tw
UTD36N03
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UNISONIC TECHNOLOGIES CO., LTD
4 of 5
QW-R502-179.B
www.unisonic.com.tw
UTD36N03
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
QW-R502-179.B
www.unisonic.com.tw
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