UTM2054G-AB3-R [UTC]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
| 型号： | UTM2054G-AB3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总2页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTM2054
Preliminary
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The UTM2054 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON)= 35mΩ @VGS=10V
* RDS(ON)= 45mΩ @VGS=4.5V
* RDS(ON)= 110mΩ @VGS=2.5V
Lead-free:
Halogen-free: UTM2054G
UTM2054L
* Ultra low gate charge ( typical 11.5 nC )
* Low reverse transfer capacitance ( CRSS = typical 60 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-89
Packing
Normal
Lead Free
Halogen Free
1
2
3
UTM2054-AB3-R
UTM2054L-AB3-R
UTM2054G-AB3-R
G
D
S
Tape Reel
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-289.a
UTM2054
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta =25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
20
±16
5
V
Continuous
Pulsed
Drain Current (VGS=10V)
A
IDM
20
Diode Continuous Forward Current
Power Dissipation
IS
3
A
PD
1.47
150
W
°C
Junction Temperature
Storage Temperature
TJ
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0V, ID=250µA
20
V
VDS=16V, VGS=0V
VDS=0V, VGS=±16V
1
μA
IGSS
±100 nA
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, IDS=5A
0.6 0.9 1.5
V
35
45
40
54
Static Drain-Source On-State Resistance
(Note)
mΩ
VGS=4.5V, IDS=3.5A
VGS=2.5V, IDS=2.5A
110 130
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
RG
450
100
60
pF
pF
pF
Ω
VDS=15V, VGS=0V, f=1.0MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
2.5
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
tD(ON)
tR
tD(OFF)
tF
7
15
19
6
10
25
26
7
ns
ns
VDD=10V, RL=10Ω, IDS=1A,
VGEN=4.5V, RG=6Ω
Turn-Off Delay Time
Turn-Off Fall Time
ns
ns
Total Gate Charge
QG
11.5 15
3.8
nC
nC
nC
VDS=10V, VGS=4.5V, IDS=5 A
Gate-Source Charge
Gate-Drain Charge
QGS
QDD
5.2
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage (Note)
VSD
ISD=3A, VGS=0V
0.7 1.3
V
Note: Pulse width≦300μs, Duty cycle≦2%
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
2 of 2
QW-R502-289.a
www.unisonic.com.tw
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