UTM2513G-TN3-R [UTC]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式型号: | UTM2513G-TN3-R |
厂家: | Unisonic Technologies |
描述: | N-CHANNEL ENHANCEMENT MODE |
文件: | 总4页 (文件大小:208K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTM2513
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
FEATURES
* RDS(ON) = 10.5mΩ(typ.) @VGS = 10 V
* RDS(ON) = 16mΩ(typ.) @VGS = 4.5 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
Lead-free: UTM2513L
Halogen-free: UTM2513G
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
UTM2513L-TN3-R
UTM2513L-TN3-T
Halogen Free
1
G
G
2
D
D
3
S
S
UTM2513-TN3-R
UTM2513-TN3-T
UTM2513G-TN3-R
UTM2513G-TN3-T
TO-252
TO-252
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-228.A
UTM2513
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
25
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±20
40
V
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
A
IDM
90
A
PD
50
W
°C
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS VGS=0V, IDS=250µA
25
V
IDSS
IGSS
VDS=24V, VGS=0V
VDS=0V, VGS=±20V
1
µA
±100 nA
Gate Threshold Voltage
VGS(TH) VDS=VGS, IDS=250µA
1.30 1.80 2.50
V
VGS=10V, IDS=12A
RDS(ON)
10.5
16
13
23
Drain-Source On-State Resistance(Note)
mΩ
V
GS=4.5V, IDS=10A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
1560
345
pF
pF
pF
VDS=15V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note)
Turn-ON Rise Time
245
tD(ON)
tR
tD(OFF)
tF
30
60
35
67
ns
ns
I
DS=1A, VDD=15V, RG=3ꢀ,
Turn-OFF Delay Time
272 285
168 172
ns
Turn-OFF Fall Time
ns
Total Gate Charge (Note)
Gate-Source Charge
QG
28
3.6
8.4
38
nC
nC
nC
VDS=15V, VGS=10V, IDS=10A
QGS
QGD
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note)
VSD
ISD=10A, VGS=0V
0.9
1.3
V
Note: Pulse width ≤300us, duty cycle ≤2%
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-228.A
www.unisonic.com.tw
UTM2513
Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-228.A
UTM2513
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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