UTT60P03L-TN3-R [UTC]
-60A, -30V, P-CHANNEL POWER MOSFETS; -60A ， -30V ，P沟道功率MOSFET
| 型号： | UTT60P03L-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | -60A, -30V, P-CHANNEL POWER MOSFETS |
| 文件： | 总5页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTT60P03
Preliminary
Power MOSFET
-60A, -30V, P-CHANNEL
POWER MOSFETS
DESCRIPTION
The UTC UTT60P03 is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed and a minimum on-state resistance and it can also withstand
high energy in the avalanche.
This UTC UTT60P03 is suitable for switching converters, motor
drivers, switching regulators and relay drivers.
FEATURES
* VDS = -60V
* ID = -30A
* RDS(ON)=0.027Ω @ VGS=-10V, ID=-60A
* High Switching Speed
SYMBOL
3.Source
1.Gate
2.Drain
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
TO-252
Packing
Halogen Free
1
2
3
UTT60P03L-TN3-R
UTT60P03G-TN3-R
D: Drain S: Source
G
D
S
Tape Reel
Note: Pin Assignment: G: Gate
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QW-R502-605.a
UTT60P03
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-30
UNIT
V
Drain-Source Voltage (Note 2)
Gate-Source Voltage
±20
V
Continuous
Pulsed (Note 2)
-60
A
Drain Current
IDM
240
A
Power Dissipation
45
W
PD
Derate Above 25°C
Junction Temperature
Storage Temperature
0.36
W/°C
°C
°C
TJ
+150
-55~+150
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating: Pulse width limited by maximum junction temperature
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
RATINGS
110
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.73
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UTT60P03
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=-250µA, VGS=0V
VDS=Rated BVDSS, VGS=0V
-30
V
-1
Drain-Source Leakage Current
IDSS
µA
VDS=0.8×Rated BVDSS, TC=150°C
VGS=+20V
-50
Gate- Source Leakage
Current
Forward
Reverse
+100 nA
IGSS
VGS=-20V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State
Resistance (Note)
VGS(TH) VDS=VGS, ID=-250µA
RDS(ON) VGS=-10V, ID=-60A
-2
-4
V
0.027
ꢀ
DYNAMIC PARAMETERS
Input Capacitance
CISS
3000
1500
525
pF
pF
pF
VGS=0V, VDS=-25V, f=1.0MHz
Output Capacitance
COSS
CRSS
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Turn-On Time
QG
VGS=0 ~ -20V
190
100
7.5
230
120
9
nC
nC
nC
ns
ns
ns
ns
ns
ns
VDD=-24V, ID≈-60A,
QG(-10) VGS=0 ~ -10V
RL=0.4ꢀ, IG(REF)=-3mA
QG(TH) VGS=0 ~ -2V
tON
140
Turn-ON Delay Time
Rise Time
tD(ON)
20
75
35
40
tR
tD(OFF)
tF
VDD=15V, VGS=-10V, ID≈60A,
RL=0.25ꢀ, RG=2.5ꢀ
Turn-OFF Delay Time
Fall-Time
Turn-Off Time
tOFF
115
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
(Note )
VSD
tRR
ISD=-60A
ISD=-60A, ISD/dt=100A/µs
-1.75
200
V
Body Diode Reverse Recovery Time
ns
Note: Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
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UTT60P03
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
tAV
VDS
0
L
Vary tP To Obtain
Required Peak IAS
-
RG
VDD
+
0V
DUT
VDD
tP
IAS
VGS
VDS
IAS
tP
0.01ꢀ
BVDSS
Unclamped Energy Test Circuit
Unclamped Energy Waveform
tON
td(ON)
tOFF
td(OFF)
tf
tr
0
10%
10%
VDS
VGS
RL
VDS
VGS
90%
90%
-
0
VGS
VDD
10%
50%
DUT
+
RGS
50%
90%
PULSE WIDTH
Resistive Switching Waveforms
Switching Time Test Circuit
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UTT60P03
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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