-SP10NAE600S7-LQ89F08T [VINCOTECH]
Low collector emitter saturation voltage;High speed and smooth switching;
| 型号： | -SP10NAE600S7-LQ89F08T |
| 厂家： | 
VINCOTECH |
| 描述： | Low collector emitter saturation voltage;High speed and smooth switching |
| 文件： | 总35页 (文件大小：5240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B0-SP10NAx600S7-LQx9F08T
datasheet
flowANPC S3 split
1500 V / 600 A
Topology features
flow S3 12 mm housing
● Temperature sensor
● Advanced Neutral Point Clamped topology
● Integrated Capacitor
● Split topology
Component features
● Low collector emitter saturation voltage
● High speed and smooth switching
Housing features
● Base isolation: Al2O3
● CTI600 housing material
● Compact, baseplate-less housing
● VINcoPress Technology
Schematic
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
● Reliable cold welding connection
Target applications
● Solar Inverters
Types
● B0-SP10NAD600S7-LQ79F08T
● B0-SP10NAE600S7-LQ89F08T
Copyright Vincotech
1
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
AC Switch
VCES
Collector-emitter voltage
950
318
800
365
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
AC Diode
VRRM
Peak repetitive reverse voltage
950
157
600
277
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Neutral Point Switch
VCES
Collector-emitter voltage
950
148
400
283
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
DC-Link Diode
VRRM
Peak repetitive reverse voltage
950
157
600
277
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
DC-Link Switch
VCES
Collector-emitter voltage
950
292
1200
491
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Neutral Point Diode
VRRM
Peak repetitive reverse voltage
1200
144
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
858
A
Single Half Sine Wave,
tp = 10 ms
3672
301
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Copyright Vincotech
3
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Capacitor (DC)
1000
1000
VMAX
Maximum DC voltage
Tj = 125 °C
Tj = 150 °C
V
750
Top
Operation Temperature
-55 ... 150
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
>12,7
V
mm
mm
12,16 / 11,8
≥ 600
LQ79F08T / LQ89F08T
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
4
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0065
400
25
4,15
4,85
5,65
V
V
25
1,21
1,23
1,24
1,4(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
25
8
µA
nA
Ω
20
200
0,75
49200
530
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
220
±15
0
4100
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
0,26
K/W
Rth(j-s)
AC Diode
Static
25
2,1
2,59
2,43
2,37
2,8(1)
VF
IR
Forward voltage
300
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
12
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
0,34
K/W
Rth(j-s)
Copyright Vincotech
5
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Neutral Point Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00334 25
25
4,35
5,1
5,85
V
V
1,83
2,06
2,11
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
200
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
4
µA
nA
Ω
20
25
200
0,75
13000
278
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
40
±15
0
460
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,34
K/W
Rth(j-s)
25
89,6
92,8
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
93,44
11,84
13,44
14,08
95,04
116,8
122,24
21,84
43,77
52,18
5,42
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
225
tf
125
150
25
ns
QrFWD=8,4 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
QrFWD=18,65 µC
QrFWD=22,53 µC
125
150
25
7,51
mWs
mWs
8,04
5,79
Eoff
125
150
9,12
9,98
Copyright Vincotech
6
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
DC-Link Diode
Static
25
2,1
2,59
2,43
2,37
2,8(1)
VF
IR
Forward voltage
300
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
12
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,34
K/W
Rth(j-s)
25
281,62
412,72
452,68
75,17
110,38
121,86
8,4
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=16479 A/µs
Qr
Recovered charge
di/dt=15192 A/µs ±15
di/dt=14757 A/µs
600
225
125
150
25
18,65
22,53
3,73
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
8,77
mWs
A/µs
10,68
13298
13191
13480
(dirf/dt)max
125
150
Copyright Vincotech
7
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
DC-Link Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00975 25
25
4,35
5,1
5,85
V
V
1,82
2,07
2,13
2,25(1)
VCEsat
Collector-emitter saturation voltage
15
600
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
12
µA
nA
Ω
20
25
300
0,5
37800
810
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
120
±15
0
1350
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,19
K/W
Rth(j-s)
25
193,08
196,81
198,35
16,02
18,33
18,72
194,16
242,48
256,56
23,46
44,46
54,73
4,42
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
225
tf
125
150
25
ns
QrFWD=0,715 µC
QrFWD=0,707 µC
QrFWD=0,7 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
4,89
mWs
mWs
4,93
5,32
Eoff
125
150
9,62
10,98
Copyright Vincotech
8
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Neutral Point Diode
Static
25
1,44
1,71
1,81
1,2
1,6(1)
480
VF
IR
Forward voltage
120
125
150
25
V
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
84
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,32
K/W
Rth(j-s)
25
89,37
85,82
IRM
Peak recovery current
125
150
25
A
84,02
13,66
trr
Reverse recovery time
125
150
25
14,12
ns
14,08
0,715
di/dt=13649 A/µs
Qr
Recovered charge
di/dt=12810 A/µs ±15
di/dt=12887 A/µs
600
225
125
150
25
0,707
μC
0,7
0,03
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,028
mWs
A/µs
0,027
19045,32
18252,19
16046,84
(dirf/dt)max
125
150
Copyright Vincotech
9
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Capacitor (DC)
Static
DC bias voltage =
0 V
33
nF
%
%
C
Capacitance
25
25
Tolerance
-5
5
Dissipation factor
f = 1 kHz
0,1
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
10
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
AC Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1000
1000
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
750
500
250
0
750
500
250
0
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
400
10
-1
300
200
100
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,26
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,48E-02
5,61E-02
1,18E-01
3,20E-02
9,31E-03
3,94E+00
7,03E-01
7,58E-02
1,49E-02
9,18E-04
Copyright Vincotech
11
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
AC Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
12
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
AC Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,343
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,28E-02
6,16E-02
9,29E-02
1,29E-01
3,71E-02
6,68E+00
1,56E+00
1,14E-01
2,95E-02
3,90E-03
Copyright Vincotech
13
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Neutral Point Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
600
600
VGE
:
7 V
8 V
500
400
300
200
100
0
500
400
300
200
100
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
10
10
tp(s)
V
GE(V)
tp
=
250
8
μs
D =
tp / T
0,336
25 °C
VCE
=
V
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,56E-02
1,54E-01
9,21E-02
1,13E-02
1,31E-02
1,61E+00
1,15E-01
2,31E-02
2,30E-03
3,26E-04
Copyright Vincotech
14
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Neutral Point Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
15
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
DC-Link Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,343
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,28E-02
6,16E-02
9,29E-02
1,29E-01
3,71E-02
6,68E+00
1,56E+00
1,14E-01
2,95E-02
3,90E-03
Copyright Vincotech
16
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
DC-Link Switch Characteristics
figure 15.
IGBT
figure 16.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1250
1250
VGE
:
7 V
8 V
9 V
1000
750
500
250
0
1000
750
500
250
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 17.
IGBT
figure 18.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
200
10
-1
150
100
50
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
24
μs
V
D =
tp / T
0,193
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,95E-02
5,08E-02
6,71E-02
9,38E-03
6,67E-03
2,31E+00
2,43E-01
5,42E-02
6,03E-03
4,50E-04
Copyright Vincotech
17
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
DC-Link Switch Characteristics
figure 19.
IGBT
Safe operating area
IC = f(VCE
)
10000
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
18
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Neutral Point Diode Characteristics
figure 20.
FWD
figure 21.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
350
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,316
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,78E-02
5,51E-02
1,40E-01
5,42E-02
1,91E-02
3,14E+00
6,41E-01
5,18E-02
6,78E-03
7,23E-04
Copyright Vincotech
19
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Thermistor Characteristics
figure 22.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
20
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Neutral Point Switching Characteristics
figure 23.
IGBT
figure 24.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
20,0
17,5
15,0
12,5
10,0
7,5
20,0
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eoff
5,0
5,0
2,5
2,5
0,0
0,0
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
225
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 25.
FWD
figure 26.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
17,5
15,0
12,5
10,0
7,5
15,0
12,5
10,0
7,5
Erec
Erec
Erec
Erec
5,0
Erec
5,0
2,5
Erec
2,5
0,0
0,0
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
225
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Neutral Point Switching Characteristics
figure 27.
IGBT
figure 28.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(off)
td(on)
-1
10
-1
10
tf
tf
tr
tr
-2
10
-2
10
-3
10
-3
10
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
225
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 29.
FWD
figure 30.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
225
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Neutral Point Switching Characteristics
figure 31.
FWD
figure 32.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
40
35
30
25
20
15
10
5
30
25
20
15
10
5
Qr
Qr
Qr
Qr
Qr
Qr
0
0
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
225
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 33.
FWD
figure 34.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
600
500
400
300
200
100
0
700
600
500
400
300
200
100
0
IRM
IRM
IRM
IRM
IRM
IRM
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
225
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
23
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Neutral Point Switching Characteristics
figure 35.
FWD
figure 36.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
20000
30000
25000
20000
15000
10000
5000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
17500
15000
12500
10000
7500
5000
2500
0
dirr/dt ──────
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
225
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 37.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
450
IC MAX
400
350
300
250
200
150
100
50
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
Copyright Vincotech
24
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
DC-Link Switching Characteristics
figure 38.
IGBT
figure 39.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
20,0
17,5
15,0
12,5
10,0
7,5
15,0
12,5
10,0
7,5
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eoff
5,0
5,0
2,5
2,5
0,0
0,0
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
225
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 40.
FWD
figure 41.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,045
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
225
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
25
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
DC-Link Switching Characteristics
figure 42.
IGBT
figure 43.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(off)
td(on)
-1
10
-1
10
tf
tf
tr
tr
-2
10
-2
10
-3
10
-3
10
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
225
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 44.
FWD
figure 45.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0225
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
trr
trr
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
225
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
26
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
DC-Link Switching Characteristics
figure 46.
FWD
figure 47.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
225
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 48.
FWD
figure 49.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
100
80
60
40
20
0
125
100
75
50
25
0
IRM
IRM
IRM
IRM
IRM
IRM
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
225
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
27
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
DC-Link Switching Characteristics
figure 50.
FWD
figure 51.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
22500
40000
35000
30000
25000
20000
15000
10000
5000
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
20000
dirr/dt ──────
17500
15000
12500
10000
7500
5000
2500
0
0
0
100
200
300
400
500
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
225
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 52.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
1500
IC MAX
1250
1000
750
500
250
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
Copyright Vincotech
28
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Switching Definitions
figure 53.
IGBT
figure 54.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 55.
IGBT
figure 56.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
29
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Switching Definitions
figure 57.
FWD
figure 58.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
30
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
B0-SP10NAD600S7-LQ79F08T
Ordering Code
Version
Ordering Code
Without thermal paste
B0-SP10NAD600S7-LQ79F08T
B0-SP10NAD600S7-LQ79F08T-/7/
With thermal paste (5,2 W/mK, PTM6000HV)
Marking
Name
Date code
UL & VIN
Lot
Serial
SSSS
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
GND1
GND1
GND1
GND1
GND1
GND1
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
Therm1
Therm2
Ph1
47,5
44,8
42,1
39,4
36,7
34
2
0
3
0
4
0
5
0
6
0
7
23,55
20,85
18,15
15,45
12,75
10,05
7,35
4,65
0
0
8
0
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
0
0
0
0
0
43,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
47,4
46,4
25,9
25,9
17,9
17,9
34,9
0
33,5
36,2
38,9
41,6
44,3
47
Ph1
Ph1
Ph1
Ph1
Ph1
49,7
52,4
38,9
41,9
19,85
22,85
46,9
49,9
24,95
Ph1
Ph1
S13
G13
G11
S11
S16
G16
C13
Copyright Vincotech
31
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
B0-SP10NAE600S7-LQ89F08T
Ordering Code
Version
Ordering Code
Without thermal paste
B0-SP10NAE600S7-LQ89F08T
B0-SP10NAE600S7-LQ89F08T-/7/
With thermal paste (5,2 W/mK, PTM6000HV)
Marking
Name
Date code
UL & VIN
Lot
Serial
SSSS
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
DC-
46,1
43,4
40,7
38
2
0
DC-
3
0
DC-
4
0
DC-
5
35,3
32,6
29,9
27,2
16,6
13,9
11,2
8,5
0
DC-
6
0
DC-
7
0
DC-
8
0
DC-
9
0
GND2
GND2
GND2
GND2
GND2
GND2
Ph2
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
0
0
0
5,8
0
3,1
0
0
50,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
50,4
43,4
35,45
34,45
27,25
27,25
16,6
16,6
32,3
2,7
Ph2
5,4
Ph2
8,1
Ph2
10,8
13,5
16,2
18,9
52,4
52,4
11,1
14,1
45,65
48,65
15,6
18,6
24,1
Ph2
Ph2
Ph2
Ph2
Therm1
Therm2
G14
S14
G12
S12
S15
G15
C12
Copyright Vincotech
32
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
B0-SP10NAD600S7-LQ79F08T
Pinout
DC+
7-14
Rt
16
15
Therm1
Therm2
T11
D11
G11
S11
27
C10
28
C13
31
D14
T16
T13
D16
G16
S16
G13
S13
30
29
26
25
GND1
1-6
Ph1
17-24
Identification
Component
Voltage
Current
Function
Comment
ID
T13
D14
T16
D11
T11
D16
C10
Rt
IGBT
FWD
950 V
950 V
950 V
950 V
950 V
1200 V
1000 V
400 A
300 A
200 A
300 A
600 A
120 A
AC Switch
AC Diode
IGBT
Neutral Point Switch
FWD
DC-Link Diode
DC-Link Switch
Neutral Point Diode
Capacitor (DC)
Thermistor
IGBT
FWD
Capacitor
Thermistor
Copyright Vincotech
33
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
B0-SP10NAE600S7-LQ89F08T
Pinout
GND2
9-14
Ph2
15-22
T15
T14
D15
D13
G15
S15
G14
S14
30
29
25
26
C12
31
C20
T12
D12
G12
S12
27
28
Rt
24
Therm2
23
1-8
DC-
Therm1
Identification
Component
Voltage
Current
Function
Comment
ID
T14
D13
T15
D12
T12
D15
C20
Rt
IGBT
FWD
950 V
950 V
950 V
950 V
950 V
1200 V
1000 V
400 A
300 A
200 A
300 A
600 A
120 A
AC Switch
AC Diode
IGBT
Neutral Point Switch
DC-Link Diode
DC-Link Switch
Neutral Point Diode
Capacitor (DC)
Thermistor
FWD
IGBT
FWD
Capacitor
Thermistor
Copyright Vincotech
34
31 Mar. 2023 / Revision 2
B0-SP10NAx600S7-LQx9F08T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 45
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow S3 packages see vincotech.com website.
Package data
Package data for flow S3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Combine LQ79F08T and LQ89F08T datasheets
Change Neutral Point Diode
B0-SP10NAx600S7-LQx9F08T-D2-14
31 Mar. 2023
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
35
31 Mar. 2023 / Revision 2
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