10-0B06PPA006RC-L023A09 [VINCOTECH]
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels;
| 型号： | 10-0B06PPA006RC-L023A09 |
| 厂家： | 
VINCOTECH |
| 描述： | Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels 双极性晶体管 |
| 文件： | 总31页 (文件大小：3525K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-0B06PPA006RC-L023A09
datasheet
flowPIM 0B + PFC
600 V / 6 A
Features
flow 0B 17 mm housing
● Converter, PFC, inverter in one housing
● High speed IGBT for PFC
● One screw heatsink mounting
Schematic
Target applications
● Embedded Drives
Types
● 10-0B06PPA006RC-L023A09
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Rectifier Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1600
18
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
60 Hz Single Half Sine Wave
150
34
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
150
Copyright Vincotech
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27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collector-emitter voltage
600
8
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
ICRM
Repetitive peak collector current
Turn off safe operating area
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj ≤ 150°C, VCE ≤ 600 V
Tj = Tjmax
18
12
39
±20
5
A
A
Ptot
VGES
tSC
Ts = 80 °C
W
V
Short circuit ratings
VGE = 15 V
Vcc = 400 V
Tj = 150 °C
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
IF
Ptot
Tjmax
Peak repetitive reverse voltage
600
8
V
A
Continuous (direct) forward current
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
39
W
°C
Maximum junction temperature
175
PFC Switch
VCES
IC
Collector-emitter voltage
650
21
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
ICRM
Repetitive peak collector current
Turn off safe operating area
Total power dissipation
tp limited by Tjmax
Tj ≤ 175°C, VCE ≤ 650 V
Tj = Tjmax
45
A
45
A
Ptot
VGES
Tjmax
Ts = 80 °C
44
W
V
Gate-emitter voltage
±20
175
Maximum junction temperature
°C
PFC Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
15
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
30
A
Tj = Tjmax
43
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
PFC Sw. Protection Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
8
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
12
A
Tj = Tjmax
32
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
min. 12,7
> 200
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Rectifier Diode
Static
25
1,04
0,97
1,14
20
VF
IR
Forward voltage
Reverse leakage current
Thermal
7
V
125
1600
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,09
K/W
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,00011 25
25
4,4
5
5,6
V
V
1,88
2,23
2,33
2,34
2,62
VCEsat
Collector-emitter saturation voltage
15
6
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
600
0
25
2
µA
nA
Ω
20
25
120
none
470
24
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
14
15
480
6
48
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,41
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
25
106
102
18
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
22
Rgon = 64 Ω
Rgoff = 64 Ω
ns
121
127
8
Turn-off delay time
Fall time
±15
400
6
50
0,160
0,241
0,078
Qr
Qr
= 0,3 μC
= 0,5 μC
FWD
Eon
Turn-on energy (per pulse)
FWD
mWs
Eoff
Turn-off energy (per pulse)
125
0,112
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
2,33
2,18
2,14
2,6
Forward voltage
VF
6
125
150
V
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,41
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
4
5
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
192
235
0,309
0,531
0,085
0,138
58
trr
Qr
ns
di/dt = 410 A/μs
di/dt = 227 A/μs
±15
400
6
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
46
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
PFC Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0004 25
25
3,3
4
4,7
V
V
1,64
1,77
1,80
2,22
VCEsat
Collector-emitter saturation voltage
15
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
120
none
930
24
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
4
15
520
15
38
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,14
K/W
Dynamic
25
17
17
18
td(on)
125
150
25
Turn-on delay time
25
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
26
26
129
141
145
14
14
14
0,418
0,535
0,571
0,106
Rgon = 32 Ω
Rgoff = 32 Ω
ns
td(off)
Turn-off delay time
Fall time
0 / 15
400
15
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 0,5 μC
= 0,9 μC
= 1 μC
Eon
Turn-on energy (per pulse)
mWs
Eoff
Turn-off energy (per pulse)
125
150
0,141
0,154
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
PFC Diode
Static
25
1,51
1,43
1,39
1,92
0,94
VF
IR
125
150
Forward voltage
15
V
Reverse leakage current
650
400
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,19
K/W
Dynamic
25
8
12
13
88
114
125
0,463
0,949
1,047
0,101
0,222
0,244
390
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
Peak recovery current
A
trr
Qr
Reverse recovery time
ns
di/dt = 616 A/μs
di/dt = 605 A/μs
di/dt = 593 A/μs
0 / 15
15
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
241
171
PFC Sw. Protection Diode
Static
25
1,73
1,59
1,54
1,87
0,1
VF
IR
125
150
Forward voltage
6
V
Reverse leakage current
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
3,01
K/W
Copyright Vincotech
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10-0B06PPA006RC-L023A09
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
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10-0B06PPA006RC-L023A09
datasheet
Rectifier Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
21
18
15
12
9
Z
10-1
0,5
0,2
6
0,1
0,05
0,02
0,01
0,005
0
3
10-2
0
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
2,5
3
VF (V)
tp
=
250
μs
25 °C
D =
tp / T
2,09
Tj:
125 °C
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
4,86E-02
1,45E-01
1,18E+00
5,40E-01
1,74E-01
1,03E+01
6,91E-01
6,09E-02
1,88E-02
1,96E-03
Copyright Vincotech
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27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
18
18
VGE
:
7
V
V
V
I
I
8
9
15
12
9
15
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
12
9
6
6
3
3
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
V
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
6
I
5
Z
100
4
3
2
1
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
10
VG E (V)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
2,41
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,21E-02
1,73E-01
1,45E+00
4,08E-01
3,14E-01
2,78E+00
2,71E-01
4,23E-02
1,17E-02
2,24E-03
Copyright Vincotech
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10-0B06PPA006RC-L023A09
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
16
100
120 V
480 V
V
I
14
1ms
10µs
100µs
10ms
100ms
DC
12
10
8
10
1
6
4
0,1
2
0
0
0,01
1
10
20
30
40
50
60
QG (nC)
10
100
1000
VC E (V)
D =
single pulse
80 ºC
I C
=
6
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
figure 7.
IGBT
figure 8.
IGBT
Short circuit duration as a function of VGE
Typical short circuit current as a function of VGE
tpSC = f(VGE
)
I SC = f(VGE)
12
90
I
80
70
60
50
40
30
20
10
0
t
10
8
6
4
2
0
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
VG E (V)
VG E (V)
VCE
Tj
=
VCE
≤
400
150
V
ºC
400
25
V
ºC
≤
Tj
≤
Copyright Vincotech
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27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
18
15
12
9
Z
100
0,5
10-1
6
0,2
0,1
0,05
0,02
0,01
0,005
0
3
10-2
0
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
2,41
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
7,21E-02
1,73E-01
1,45E+00
4,08E-01
3,14E-01
2,78E+00
2,71E-01
4,23E-02
1,17E-02
2,24E-03
Copyright Vincotech
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10-0B06PPA006RC-L023A09
datasheet
PFC Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
50
50
VGE
:
7
V
V
V
I
I
8
9
40
30
20
10
0
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
40
30
20
10
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
V
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
8
I
Z
6
100
4
2
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
VG E (V)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
2,14
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,10E-01
3,05E-01
8,44E-01
4,55E-01
2,79E-01
1,45E-01
1,85E+00
2,58E-01
6,42E-02
1,26E-02
3,05E-03
4,84E-04
Copyright Vincotech
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10-0B06PPA006RC-L023A09
datasheet
PFC Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
16
100
130 V
V
I
14
12
10
8
10
520 V
1
6
4
0,1
2
0
0
0,01
1
5
10
15
20
25
30
35
40
10
100
1000
QG (nC)
VC E (V)
D =
single pulse
80 ºC
I C
=
15
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
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27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
PFC Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
50
40
30
20
10
0
100
Z
10-1
10-2
10-3
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-5
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
2,5
3
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
=
2,19
K/W
FWD thermal model values
R (K/W)
τ (s)
6,49E-02
1,67E-01
9,76E-01
5,62E-01
3,00E-01
1,17E-01
4,22E+00
4,66E-01
5,57E-02
1,45E-02
2,81E-03
5,62E-04
Copyright Vincotech
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27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
PFC Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
18
15
12
9
Z
100
0,5
10-1
6
0,2
0,1
0,05
0,02
0,01
0,005
0
3
10-2
0
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
3,01
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
5,15E-02
9,53E-02
3,22E-01
1,35E+00
8,32E-01
3,58E-01
9,38E+00
8,91E-01
1,25E-01
2,97E-02
8,19E-03
1,78E-03
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
16
27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
0,6
0,6
E
E
Eon
0,45
0,45
Eon
0,3
0,15
0
0,3
0,15
0
Eon
Eon
Eoff
Eoff
Eoff
Eoff
0
3
6
9
12
0
50
100
150
200
250
300
Rg (Ω)
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
125 °C
VCE
=
=
=
=
400
±15
64
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
400
±15
6
V
V
A
Tj:
VGE
R gon
R goff
64
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
0,24
0,24
E
E
0,18
0,18
Erec
0,12
0,06
0
0,12
0,06
0
Erec
Erec
Erec
0
50
100
150
200
250
300
Rg (Ω)
0
3
6
9
12
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
400
±15
64
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
400
±15
6
V
V
A
Tj:
125 °C
125 °C
VGE
R gon
Copyright Vincotech
17
27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
td(on)
td(off)
t
t
td(off)
td(on)
0,1
0,1
tr
tr
tf
tf
0,01
0,01
0,001
0,001
0
50
100
150
200
250
300
0
3
6
9
12
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
150
400
±15
64
°C
V
Tj =
150
400
±15
6
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
R gon
R goff
V
VGE
I C
Ω
Ω
64
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
0,4
0,4
trr
t
t
0,3
0,3
trr
trr
trr
0,2
0,1
0
0,2
0,1
0
0
0
3
6
9
12
50
100
150
200
250
300
Rg on (Ω)
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
125 °C
VCE
=
=
=
400
±15
64
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
400
±15
6
V
V
A
Tj:
VGE
R gon
Copyright Vincotech
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27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
1
1
Q
Q
0,75
0,75
Qr
Qr
Qr
0,5
0,5
Qr
0,25
0,25
0
0
0
0
3
6
9
12
50
100
150
200
250
300
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
125 °C
VCE
=
=
=
400
±15
64
V
V
Ω
Tj:
VCE=
VGE =
I C=
400
±15
6
V
V
A
Tj:
VGE
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
10
10
I
I
7,5
7,5
IRM
5
5
IRM
IRM
IRM
2,5
2,5
0
0
0
0
50
100
150
200
250
300
Rgo n (Ω)
3
6
9
12
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
125 °C
VCE
=
=
=
400
±15
64
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
400
±15
6
V
V
A
Tj:
VGE
R gon
Copyright Vincotech
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27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
1200
600
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
900
600
300
450
300
150
0
0
0
0
50
100
150
200
250
300
Rgon (Ω)
3
6
9
12
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
400
±15
64
V
V
Ω
Tj:
VCE =
VGE =
I C=
400
±15
6
V
V
A
Tj:
125 °C
125 °C
VGE
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
14
IC MAX
I
12
I
10
8
I
6
4
2
V
0
0
100
200
300
400
500
600
700
VC E (V)
At
Tj =
125
°C
Ω
R gon
R goff
=
=
64
64
Ω
Copyright Vincotech
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27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
Inverter Switching Definitions
General conditions
T j
=
=
=
125 °C
Rgon
Rgoff
64 Ω
64 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
400
6
V
400
6
V
A
A
tdoff
=
127
ns
tdon
=
102
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
tf =
400
6
V
VC (100%) =
I C (100%) =
400
6
V
A
A
50
ns
tr
=
22
ns
Copyright Vincotech
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27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
400
6
V
I F (100%) =
Q r (100%) =
6
A
A
0,531
μC
5
A
trr
=
235
ns
Copyright Vincotech
22
27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
PFC Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
1,2
1,2
E
Eon
E
Eon
Eon
Eon
0,9
0,9
Eon
Eon
0,6
0,3
0
0,6
0,3
0
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
0
40
80
120
25 °C
160
Rg (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
VCE
=
=
=
=
400
0 / 15
32
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
400
0 / 15
15
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
R goff
32
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
0,4
0,4
Erec
Erec
E
E
0,3
0,3
0,2
0,1
0
0,2
0,1
0
Erec
Erec
Erec
Erec
0
40
80
120
160
Rg (Ω)
0
5
10
15
20
25
30
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
400
0 / 15
32
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
400
0 / 15
15
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
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27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
PFC Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
td(off)
t
t
td(off)
0,1
0,1
tr
td(on)
tr
tf
td(on)
tf
0,01
0,01
0,001
0,001
0
40
80
120
160
0
5
10
15
20
25
30
35
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
150
400
0 / 15
32
°C
Tj =
150
400
°C
V
VCE
=
=
=
=
V
V
Ω
Ω
VCE
=
=
=
VGE
R gon
R goff
VGE
I C
0 / 15
15
V
A
32
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
0,2
0,2
t
t
trr
trr
trr
trr
0,15
0,15
trr
trr
0,1
0,05
0
0,1
0,05
0
0
0
5
10
15
20
25
30
40
80
120
25 °C
160
Rg on (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
VCE
=
=
=
400
0 / 15
32
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
400
0 / 15
15
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
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27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
PFC Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
1,6
1,5
Qr
Qr
Q
Q
1,2
1,2
Qr
Qr
0,9
0,6
0,3
0,8
0,4
Qr
Qr
0
0
0
0
5
10
15
20
25 °C
25
30
40
80
120
25 °C
160
Rgon (Ω)
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
400
0 / 15
32
V
V
Ω
Tj:
VCE=
VGE =
I C=
400
0 / 15
15
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
20
20
I
I
15
15
IRM
IRM
10
5
10
5
IRM
IRM
IRM
IRM
0
0
0
0
40
80
120
25 °C
160
Rgo n (Ω)
5
10
15
20
25 °C
25
30
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
400
0 / 15
32
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
400
0 / 15
15
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
25
27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
PFC Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
1600
800
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
1200
800
400
600
400
200
0
0
0
0
40
80
120
25 °C
160
Rgon (Ω)
5
10
15
20
25
30
IC (A)
With an inductive load at
25 °C
With an inductive load at
VCE
=
=
=
400
0 / 15
32
V
V
Ω
Tj:
VCE =
VGE =
I C=
400
0 / 15
15
V
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
V
A
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
35
IC MAX
I
30
I
25
20
15
10
5
I
V
0
0
100
200
300
400
500
600
700
VC E (V)
At
Tj =
125
°C
Ω
R gon
R goff
=
=
32
32
Ω
Copyright Vincotech
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27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
PFC Switching Definitions
General conditions
T j
=
=
=
125 °C
Rgon
Rgoff
32 Ω
32 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
400
15
141
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
V
400
15
V
A
A
tdoff
=
ns
tdon
=
17
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
tf =
400
15
V
VC (100%) =
I C (100%) =
400
15
V
A
A
14
ns
tr
=
26
ns
Copyright Vincotech
27
27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
PFC Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
400
15
V
I F (100%) =
Q r (100%) =
15
0
A
A
μC
12
A
trr
=
114
ns
Copyright Vincotech
28
27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
Ordering Code & Marking
Version
without thermal paste 17mm housing with solder pins
with thermal paste 17mm housing with solder pins
Ordering Code
10-0B06PPA006RC-L023A09
10-0B06PPA006RC-L023A09-/3/
Name
Type&Ver
TTTTTTTVV
Serial
Date code
WWYY
VIN & Lot
Serial&UL
NN-NNNNNNNNNN
NNNN-TTTTTTTVV
VIN LLLLL
Text
NN-NNNNNNNNNNNNNN
VIN LLLLL
SSSS UL
Type&Ver
Lot number
Date code
WWYY
WWYY SSSS UL
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
24,7
21,7
18,7
15
12
9
Y
0
0
0
0
0
0
0
0
0
3
Function
DC-Rect
1
2
DC-PFC
G27
3
4
DC-3
G15
5
6
DC-2
G13
7
6
8
3
DC-1
G11
9
0
10
0
Therm2
11
12
13
0
0
0
5,8
10,8
13,8
Therm1
G12
Ph1
14
15
16
17
18
19
20
21
22
5,7
8,7
13,8
13,8
13,8
10,8
9,3
G14
Ph2
14,4
14,4
19,7
22,9
27,9
27,9
23,05
Ph3
G16
DC+
13,8
13,8
6,95
6,95
PFC
ACIn1
ACIn2
DC+Rect
Copyright Vincotech
29
27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
D31, D32, D33, D34
Rectifier
1600 V
13 A
Rectifier Diode
T11, T12, T13, T14,
T15, T16
RC-IGBT
600 V
6 A
Inverter Switch
T27
D27
D47
Rt
IGBT
FWD
FWD
NTC
650 V
650 V
650 V
15 A
15 A
6 A
PFC Switch
PFC Diode
PFC Sw. Protection Diode
Thermistor
Copyright Vincotech
30
27 Mar. 2019 / Revision 4
10-0B06PPA006RC-L023A09
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 160
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow0 B packages see vincotech.com website.
Package data
Package data for flow0 B packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
PCN implementation: IFX Rapid1-> Rapid1Solar
PCN implementation: Tateyama NTC
6,7,15,23-28
8,16
10-0B06PPA006RC-L023A09-D4-14
27 Mar. 2019
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
31
27 Mar. 2019 / Revision 4
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