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10-E212PMA050M7-L189A78Z [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
10-E212PMA050M7-L189A78Z
型号： 10-E212PMA050M7-L189A78Z
厂家： VINCOTECH    VINCOTECH
描述：

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
文件： 总29页 (文件大小：9856K)
中文：  中文翻译
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10-E212PMA050M7-L189A78Z  
datasheet  
flowPIM E2  
1200 V / 50 A  
Features  
flow E2 12 mm housing  
● IGBT M7 with low VCEsat and improved EMC behavior  
● Standard industrial housing  
● Optimized Rth(j-s) with Phase Change Material  
● Built-in NTC  
Schematic  
Target applications  
● Industrial Drives  
Types  
● 10-E212PMA050M7-L189A78Z  
Copyright Vincotech  
1
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Inverter Switch  
VCES  
Collector-emitter voltage  
1200  
60  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
100  
124  
±20  
9,5  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
tSC  
Short circuit ratings  
VGE = 15 V, VCC = 800 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Inverter Diode  
VRRM  
Peak repetitive reverse voltage  
1200  
48  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
100  
87  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Brake Switch  
VCES  
Collector-emitter voltage  
1200  
60  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
100  
124  
±20  
9,5  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
tSC  
Short circuit ratings  
VGE = 15 V, VCC = 800 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
2
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Brake Diode  
VRRM  
Peak repetitive reverse voltage  
1200  
19  
V
A
IF  
Forward current (DC current)  
Total power dissipation  
Tj = Tjmax  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Ptot  
43  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Rectifier Diode  
VRRM  
Peak repetitive reverse voltage  
1600  
58  
V
A
IF  
Forward current (DC current)  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
IFSM  
I2t  
400  
800  
68  
A
Single Half Sine Wave,  
tp = 10 ms  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
Tjmax  
Maximum junction temperature  
150  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition**  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
>12,7  
8,83  
V
tp = 1 min  
V
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
≥ 600  
**Tjmax >Tj> Tjop is allowed only for maximum 60 sec overload not exceeding 1/5 duty ratio of each loading cycle for selected semiconductor component  
under switching conditions.  
Copyright Vincotech  
3
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
10  
0,005  
50  
25  
5,4  
6
6,6  
V
V
25  
1,55  
1,77  
1,83  
1,9(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
25  
0,09  
0,5  
mA  
µA  
Ω
20  
None  
10000  
350  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
0
10  
25  
25  
Reverse transfer capacitance  
Gate charge  
130  
VCC = 600 V  
15  
50  
380  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,77  
K/W  
25  
343  
337  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
349  
84  
tr  
125  
150  
25  
94  
96  
Rgon = 16 Ω  
Rgoff = 16 Ω  
274  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
297  
ns  
308  
±15  
600  
50  
96,5  
106,46  
114,83  
5,83  
7,88  
7,98  
2,97  
4,12  
5,04  
tf  
125  
150  
25  
ns  
QrFWD=4,51 µC  
QrFWD=7,96 µC  
QrFWD=8,1 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
4
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Inverter Diode  
Static  
25  
1,66  
1,78  
1,79  
2,1(1)  
VF  
IR  
Forward voltage  
50  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 1200 V  
25  
40  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,09  
K/W  
25  
23,22  
28,4  
IRRM  
Peak recovery current  
125  
150  
25  
A
27,65  
319,72  
502,45  
543,17  
4,51  
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=488 A/µs  
di/dt=364 A/µs  
di/dt=416 A/µs  
Qr  
Recovered charge  
±15  
600  
50  
125  
150  
25  
7,96  
μC  
8,1  
1,48  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
2,9  
mWs  
A/µs  
3,16  
150,38  
120,86  
82,76  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
5
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Brake Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
10  
0,005  
50  
25  
5,4  
6
6,6  
V
V
25  
1,55  
1,77  
1,83  
1,9(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
25  
0,09  
0,5  
mA  
µA  
Ω
20  
None  
10000  
350  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
0
10  
25  
25  
Reverse transfer capacitance  
Gate charge  
130  
VCC = 600 V  
15  
50  
380  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,77  
K/W  
25  
128,8  
117,2  
114  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
25,2  
tr  
125  
150  
25  
30  
30,4  
Rgon = 16 Ω  
Rgoff = 16 Ω  
619,4  
700,4  
721  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
0/15  
700  
16,5  
118,12  
159,87  
169,1  
1,13  
tf  
125  
150  
25  
ns  
QrFWD=1,53 µC  
QrFWD=2,19 µC  
QrFWD=2,43 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
1,33  
mWs  
mWs  
1,38  
1,93  
Eoff  
125  
150  
2,61  
2,79  
Copyright Vincotech  
6
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Brake Diode  
Static  
25  
1,61  
1,69  
1,7  
2,1(1)  
VF  
IR  
Forward voltage  
10  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 1200 V  
25  
25  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
2,19  
K/W  
25  
14,73  
15,4  
IRRM  
Peak recovery current  
125  
150  
25  
A
15,6  
225,94  
322,11  
356,51  
1,53  
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=662 A/µs  
di/dt=627 A/µs  
di/dt=544 A/µs  
Qr  
Recovered charge  
0/15  
700  
16,5  
125  
150  
25  
2,19  
μC  
2,43  
0,682  
1,05  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
1,19  
70,55  
84,31  
99,59  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
7
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Rectifier Diode  
Static  
25  
1,09  
1,02  
1,02  
1,5(1)  
VF  
IR  
Forward voltage  
35  
125  
150  
25  
V
100  
Reverse leakage current  
Thermal  
Vr = 1600 V  
µA  
150  
2000  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
1,03  
K/W  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
5
kΩ  
%
R100 = 493 Ω  
100  
-5  
5
245  
1,4  
mW  
mW/K  
K
d
25  
B(25/50)  
Tol. ±2 %  
Tol. ±2 %  
3375  
3437  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
K
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
8
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Inverter Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
150  
150  
VGE  
:
7 V  
8 V  
9 V  
125  
100  
75  
50  
25  
0
125  
100  
75  
50  
25  
0
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
125 °C  
150 °C  
VGE  
=
Tj =  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
50  
10  
40  
30  
20  
10  
0
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-4  
10  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
10  
tp(s)  
V
GE(V)  
tp  
=
=
250  
10  
μs  
V
D =  
tp / T  
0,766  
25 °C  
125 °C  
150 °C  
VCE  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
4,42E-02  
9,11E-02  
2,73E-01  
2,59E-01  
6,73E-02  
3,15E-02  
4,45E+00  
9,15E-01  
1,28E-01  
4,34E-02  
6,94E-03  
6,91E-04  
Copyright Vincotech  
9
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Inverter Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
IC = f(VCE  
)
100  
100µs  
10  
1
1ms  
10ms  
100ms  
DC  
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
10  
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Inverter Diode Characteristics  
figure 6.  
FWD  
figure 7.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
150  
125  
100  
75  
10  
0
10  
-1  
10  
50  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
25  
-3  
10  
0
0,0  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
1,094  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
4,05E-02  
8,82E-02  
2,80E-01  
4,48E-01  
1,45E-01  
9,23E-02  
7,09E+00  
9,93E-01  
1,18E-01  
3,26E-02  
5,44E-03  
5,22E-04  
Copyright Vincotech  
11  
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Brake Switch Characteristics  
figure 8.  
IGBT  
figure 9.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
150  
150  
VGE  
:
7 V  
8 V  
9 V  
125  
100  
75  
50  
25  
0
125  
100  
75  
50  
25  
0
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
125 °C  
150 °C  
VGE  
=
Tj =  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 10.  
IGBT  
figure 11.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
50  
10  
40  
30  
20  
10  
0
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-4  
10  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
10  
tp(s)  
V
GE(V)  
tp  
=
=
250  
10  
μs  
V
D =  
tp / T  
0,766  
25 °C  
125 °C  
150 °C  
VCE  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
4,42E-02  
9,11E-02  
2,73E-01  
2,59E-01  
6,73E-02  
3,15E-02  
4,45E+00  
9,15E-01  
1,28E-01  
4,34E-02  
6,94E-03  
6,91E-04  
Copyright Vincotech  
12  
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Brake Switch Characteristics  
figure 12.  
IGBT  
Safe operating area  
IC = f(VCE  
)
100  
100µs  
10  
1
1ms  
10ms  
100ms  
DC  
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
13  
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Brake Diode Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
30  
25  
20  
15  
10  
5
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
-2  
10  
0
0,0  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
2,189  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
8,09E-02  
2,08E-01  
6,85E-01  
5,92E-01  
3,27E-01  
2,95E-01  
3,20E+00  
2,82E-01  
4,41E-02  
1,02E-02  
2,02E-03  
3,64E-04  
Copyright Vincotech  
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17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Rectifier Diode Characteristics  
figure 15.  
Rectifier  
figure 16.  
Rectifier  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
100  
75  
50  
25  
0
10  
0
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-4  
10  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,00  
0,25  
0,50  
μs  
0,75  
1,00  
1,25  
1,50  
1,75  
VF(V)  
10  
10  
10  
tp(s)  
tp  
=
250  
D =  
tp / T  
1,032  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
Rectifier thermal model values  
R (K/W)  
τ (s)  
4,86E-02  
1,31E-01  
5,24E-01  
1,97E-01  
8,14E-02  
4,98E-02  
5,67E+00  
6,68E-01  
9,95E-02  
3,35E-02  
4,54E-03  
8,29E-04  
Copyright Vincotech  
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17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Thermistor Characteristics  
figure 17.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
6000  
5000  
4000  
3000  
2000  
1000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
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17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Inverter Switching Characteristics  
figure 18.  
IGBT  
figure 19.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
20,0  
17,5  
15,0  
12,5  
10,0  
7,5  
17,5  
15,0  
12,5  
10,0  
7,5  
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
5,0  
5,0  
2,5  
2,5  
0,0  
0,0  
0
20  
40  
60  
80  
100  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
16  
V
V
Ω
Ω
125 °C  
150 °C  
600  
±15  
50  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
VGE  
Rgon  
Rgoff  
16  
figure 20.  
FWD  
figure 21.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
20  
40  
60  
80  
100  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
16  
V
V
Ω
125 °C  
150 °C  
600  
±15  
50  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
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17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Inverter Switching Characteristics  
figure 22.  
IGBT  
figure 23.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
1
10  
td(on)  
td(off)  
tr  
td(on)  
0
10  
td(off)  
tr  
-1  
10  
tf  
tf  
-1  
10  
-2  
10  
-2  
10  
0
20  
40  
60  
80  
100  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
±15  
16  
°C  
V
150  
600  
±15  
50  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
16  
figure 24.  
FWD  
figure 25.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn off gate resistor  
trr = f(IC)  
trr = f(Rgoff)  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
trr  
trr  
trr  
trr  
trr  
trr  
0
20  
40  
60  
80  
100  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
16  
V
V
Ω
125 °C  
150 °C  
600  
±15  
50  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
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17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Inverter Switching Characteristics  
figure 26.  
FWD  
figure 27.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn off gate resistor  
Qr = f(IC)  
Qr = f(Rgoff)  
12  
10  
8
12  
10  
8
Qr  
Qr  
Qr  
Qr  
Qr  
6
6
4
4
Qr  
2
2
0
0
0
20  
40  
60  
80  
100  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
16  
V
V
Ω
125 °C  
150 °C  
600  
±15  
50  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
figure 28.  
FWD  
figure 29.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn off gate resistor  
IRM = f(IC)  
IRM = f(Rgoff)  
30  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
0
20  
40  
60  
80  
100  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
16  
V
V
Ω
125 °C  
150 °C  
600  
±15  
50  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
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17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Inverter Switching Characteristics  
figure 30.  
FWD  
figure 31.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgoff)  
800  
2250  
2000  
1750  
1500  
1250  
1000  
750  
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
700  
600  
500  
400  
300  
200  
100  
0
dirr/dt ──────  
500  
250  
0
0
20  
40  
60  
80  
100  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
16  
V
V
Ω
125 °C  
150 °C  
600  
±15  
50  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 32.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
120  
IC MAX  
100  
80  
60  
40  
20  
0
0
250  
500  
750  
1000  
1250  
1500  
V
CE(V)  
Tj =  
At  
150  
°C  
Ω
Rgon  
Rgoff  
=
=
16  
16  
Ω
Copyright Vincotech  
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17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Brake Switching Characteristics  
figure 33.  
IGBT  
figure 34.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
5
4
3
2
1
0
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Eoff  
Eoff  
Eon  
Eon  
Eoff  
Eoff  
Eon  
Eoff  
Eoff  
Eon  
Eon  
Eon  
0
5
10  
15  
20  
25  
30  
35  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
700  
0/15  
16  
V
125 °C  
150 °C  
700  
0/15  
16,5  
V
125 °C  
150 °C  
Tj:  
Tj:  
VGE  
V
V
A
Rgon  
Rgoff  
Ω
Ω
16  
figure 35.  
FWD  
figure 36.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
5
10  
15  
20  
25  
30  
35  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
700  
0/15  
16  
V
V
125 °C  
150 °C  
700  
0/15  
16,5  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Ω
Copyright Vincotech  
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17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Brake Switching Characteristics  
figure 37.  
IGBT  
figure 38.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
1
10  
1
10  
td(off)  
0
10  
0
10  
td(on)  
td(off)  
tf  
tr  
-1  
10  
tf  
td(on)  
-1  
10  
-2  
10  
tr  
-2  
10  
-3  
10  
0
5
10  
15  
20  
25  
30  
35  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
IC(A)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
700  
0/15  
16  
°C  
150  
700  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
Ω
Ω
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
0/15  
16,5  
16  
figure 39.  
FWD  
figure 40.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn off gate resistor  
trr = f(IC)  
trr = f(Rgoff)  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
trr  
trr  
trr  
trr  
trr  
trr  
0
5
10  
15  
20  
25  
30  
35  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
700  
0/15  
16  
V
125 °C  
150 °C  
700  
0/15  
16,5  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
V
A
Ω
Copyright Vincotech  
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17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Brake Switching Characteristics  
figure 41.  
FWD  
figure 42.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn off gate resistor  
Qr = f(IC)  
Qr = f(Rgoff)  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
5
10  
15  
20  
25  
30  
35  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
700  
0/15  
16  
V
125 °C  
150 °C  
700  
0/15  
16,5  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
V
A
Ω
figure 43.  
FWD  
figure 44.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn off gate resistor  
IRM = f(IC)  
IRM = f(Rgoff)  
20,0  
17,5  
15,0  
12,5  
10,0  
7,5  
40  
35  
30  
25  
20  
15  
10  
5
IRM  
IRM  
IRM  
5,0  
IRM  
IRM  
IRM  
2,5  
0,0  
0
0
5
10  
15  
20  
25  
30  
35  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
700  
0/15  
16  
V
V
125 °C  
150 °C  
700  
0/15  
16,5  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Ω
Copyright Vincotech  
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17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Brake Switching Characteristics  
figure 45.  
FWD  
figure 46.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgoff)  
1200  
3000  
2500  
2000  
1500  
1000  
500  
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
1000  
800  
600  
400  
200  
0
0
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
700  
0/15  
16  
V
V
Ω
125 °C  
150 °C  
700  
0/15  
16,5  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 47.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
120  
IC MAX  
100  
80  
60  
40  
20  
0
0
250  
500  
750  
1000  
1250  
1500  
V
CE(V)  
Tj =  
At  
150  
°C  
Rgon  
Rgoff  
=
=
16  
16  
Ω
Ω
Copyright Vincotech  
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17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Switching Definitions  
figure 48.  
IGBT  
figure 49.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 50.  
IGBT  
figure 51.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
25  
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Switching Definitions  
figure 52.  
FWD  
figure 53.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
26  
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Ordering Code  
Marking  
Version  
Ordering Code  
Without thermal paste  
With thermal paste  
10-E212PMA050M7-L189A78Z  
10-E212PMA050M7-L189A78Z-/3/  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
2
3
4
5
6
7
8
X
Y
Function  
ACIn2  
ACIn2  
ACIn1  
ACIn1  
DC+Rect  
DC+Rect  
DC-Rect  
DC-Rect  
G27  
25,6  
22,4  
16  
12,8  
9,6  
9,6  
0
6,4  
6,4  
9,6  
9,6  
0
3,2  
0
3,2  
16  
0
0
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
0
0
0
0
0
0
0
0
19,2  
22,4  
25,6  
28,8  
32  
35,2  
38,4  
41,6  
44,8  
48  
DC-Br  
G11  
DC-1  
DC-1  
G13  
DC-2  
DC-2  
G15  
DC-3  
DC-3  
Therm1  
Therm2  
G16  
Ph3  
Ph3  
G14  
Ph2  
Ph2  
G12  
Ph1  
Ph1  
0
0
9,6  
19,2  
28,8  
32  
32  
32  
32  
32  
32  
32  
32  
32  
32  
22,4  
22,4  
9,6  
48  
48  
48  
48  
44,8  
35,2  
32  
28,8  
19,2  
16  
12,8  
3,2  
0
19,2  
16  
ACIn3  
ACIn3  
DC+Inv  
DC+Inv  
Br  
19,2  
Copyright Vincotech  
27  
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Pinout  
DC+Rect  
5,6  
DC+Inv  
33,34  
T12  
T14  
T16  
D32  
D34  
D36  
D11  
D13  
D15  
28  
G12  
25  
22  
G16  
D27  
G14  
Ph1  
29,30  
ACIn1  
ACIn2  
ACIn3  
35  
3,4  
1,2  
Ph2  
26,27  
Br  
Ph3  
23,24  
31,32  
T11  
T13  
T15  
T27  
D12  
D14  
D16  
D31  
D33  
D35  
11  
14  
17  
9
G11  
G13  
G15  
G27  
Rt  
7,8  
10  
DC-Br  
12,13  
DC-1  
15,16  
DC-2  
18,19  
DC-3  
20  
Therm1  
21  
DC-Rect  
Therm2  
---  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T11, T12, T13, T14,  
T15, T16  
D11, D12, D13, D14,  
IGBT  
1200 V  
1200 V  
50 A  
Inverter Switch  
FWD  
50 A  
Inverter Diode  
D15, D16  
T27  
IGBT  
FWD  
1200 V  
1200 V  
50 A  
10 A  
Brake Switch  
Brake Diode  
D27  
D31, D32, D33, D34,  
D35, D36  
Rectifier  
NTC  
1600 V  
35 A  
Rectifier Diode  
Thermistor  
Rt  
Copyright Vincotech  
28  
17 May. 2021 / Revision 3  
10-E212PMA050M7-L189A78Z  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow E2 packages see vincotech.com website.  
Package data  
Package data for flow E2 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
UL recognition valid for Tcase<125°C and Tmax<150°C.  
Document No.:  
Date:  
Modification:  
Pages  
New datasheet format, separate solder and pressfit pin  
variant  
Update characteristics of rectifier diode, leakage current  
max value from 50 -> 100 uA  
10-E212PMA050M7-L189A78Z-D3-14  
17 May. 2021  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
29  
17 May. 2021 / Revision 3  

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