10-EY126PA075M7-L197F78T [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;型号: | 10-EY126PA075M7-L197F78T |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
文件: | 总16页 (文件大小:3229K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-EY126PA075M7-L197F78T
10-E2126PA075M7-L197F78Z
datasheet
flowPACK E2
1200 V / 75 A
Features
flow E2 12 mm housing
● IGBT Mitsubishi gen 7 technology with low VCEsat and
Improved EMC behavior
● Standard industrial package
● Built-in NTC
Press-fit pin
Solder pin
Schematic
Target applications
● Industrial Drives
● UPS
Types
● 10-EY126PA075M7-L197F78T
● 10-E2126PA075M7-L197F78Z
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
Collector-emitter voltage
VCES
1200
74
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
150
135
±20
9,5
A
W
V
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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10-E2126PA075M7-L197F78Z
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
72
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
200
121
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Storage temperature
Tstg
Tjop
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
9,08
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0075 25
25
5,4
6
6,6
1,9
V
V
1,55
1,70
1,75
Collector-emitter saturation voltage
VCEsat
15
75
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
100
500
µA
nA
Ω
20
4
Cies
Coes
Cres
Qg
16000
480
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
190
15
600
75
570
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,70
K/W
Dynamic
25
197
208
212
29
Turn-on delay time
td(on)
125
150
25
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
38
39
Rgon = 2 Ω
Rgoff = 2 Ω
ns
203
233
242
86
113
111
5,56
7,82
8,50
5,08
6,80
Turn-off delay time
Fall time
td(off)
±15
600
75
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 8,5 μC
= 13,4 μC
= 15,3 μC
Turn-on energy (per pulse)*
Eon
mWs
125
Eoff
Turn-off energy (per pulse)*
* Ls = 12 nH
150
7,29
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
1,82
1,96
1,97
2,1
40
VF
IR
125
150
Forward voltage
100
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,79
K/W
Dynamic
25
75
77
78
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
Peak recovery current
A
278
432
459
8,54
13,39
15,31
3,20
5,19
6,00
802
614
544
trr
Qr
Reverse recovery time
ns
di/dt = 2268 A/μs
di/dt = 1969 A/μs ±15
di/dt = 1970 A/μs
600
75
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
5
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 493 Ω
-5
+5
245
1,4
mW
mW/K
K
B(25/50) Tol. ±2 %
B(25/100) Tol. ±2 %
3375
3437
B-value
K
Vincotech NTC Reference
K
Copyright Vincotech
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datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
=
250
150
μs
°C
VGE
=
V
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,70
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,63E-02
9,31E-02
3,22E-01
1,83E-01
4,91E-02
2,13E-02
4,77E+00
1,03E+00
1,68E-01
5,28E-02
8,42E-03
6,25E-04
Copyright Vincotech
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datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
80
Ts
=
ºC
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
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datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-3
10-4
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
0,79
K/W
FWD thermal model values
R (K/W)
τ (s)
4,05E-02
9,02E-02
3,71E-01
1,97E-01
5,23E-02
3,58E-02
3,25E+00
5,38E-01
8,95E-02
3,04E-02
4,59E-03
6,26E-04
Thermistor Characteristics
figure 1.
Typical NTC characteristic
Thermistor
Typical Thermistor resistance values
as a function of temperature
R = f(T)
Copyright Vincotech
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10-E2126PA075M7-L197F78Z
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
With an inductive load at
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
600
±15
2
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
75
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
75
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
8
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10-E2126PA075M7-L197F78Z
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
600
±15
2
°C
V
Tj =
150
600
±15
75
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
R gon
R goff
V
VGE
I C
Ω
Ω
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
25 °C
At
VCE
=
600
±15
2
V
V
Ω
At
VCE
=
600
V
V
A
25 °C
VGE
=
=
Tj:
VGE
I C
=
±15
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
75
Copyright Vincotech
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10-E2126PA075M7-L197F78Z
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
25 °C
At
VCE
VGE
R gon
=
600
±15
2
V
V
Ω
At
VCE
VGE
I C
=
600
±15
75
V
V
A
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
25 °C
At
VCE
=
600
±15
2
V
V
Ω
At
VCE
VGE
I C
=
600
±15
75
V
V
A
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
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10-E2126PA075M7-L197F78Z
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
At
VCE
=
600
±15
2
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
75
V
25 °C
125 °C
150 °C
VGE
=
=
=
V
A
Tj:
Tj:
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj =
125
°C
Ω
R gon
R goff
=
=
2
2
Ω
Copyright Vincotech
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datasheet
Inverter Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
2 Ω
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
75
V
600
75
V
A
A
tdoff
=
233
ns
tdon
=
208
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
600
75
V
VC (100%) =
I C (100%) =
600
75
V
A
A
113
ns
tr
=
38
ns
Copyright Vincotech
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10-E2126PA075M7-L197F78Z
datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
75
V
I F (100%) =
Q r (100%) =
75
A
A
13,39
μC
77
A
trr
=
432
ns
Copyright Vincotech
13
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10-EY126PA075M7-L197F78T
10-E2126PA075M7-L197F78Z
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with Press-fit pins
without thermal paste 12 mm housing with solder pins
with thermal paste 12 mm housing with Press-fit pins
with thermal paste 12 mm housing with solder pins
Ordering Code
10-EY126PA075M7-L197F78T
10-E2126PA075M7-L197F78Z
10-EY126PA075M7-L197F78T-/3/
10-E2126PA075M7-L197F78Z -/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVVWWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
3,2
0
Function
G16
32
1
2
32
Ph3
Ph3
Ph3
Ph2
Ph2
Ph2
G14
Ph1
Ph1
Press-fit pin
3
4
28,8
25,6
19,2
16
0
0
5
0
6
0
7
12,8
12,8
6,4
3,2
0
8
3,2
0
9
10
0
11
12
13
0
0
0
0
3,2
19,2
Ph1
G12
Therm1
Solder pin
14
15
16
17
18
19
20
21
22
0
0
28,8
44,8
48
Therm2
G11
0
DC-1
DC-1
DC-1
DC-1
DC-2
G13
3,2
6,4
9,6
12,8
12,8
16
48
48
48
48
44,8
48
DC-2
23
24
25
26
27
28
29
30
31
32
33
19,2
22,4
22,4
25,6
28,8
32
48
48
DC-2
DC-2
G15
44,8
48
DC-3
DC-3
DC-3
DC-3
DC+
DC+
DC+
DC+
48
48
32
44,8
25,6
22,4
19,2
16
12,8
12,8
12,8
12,8
Copyright Vincotech
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datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12, T13, T14,
T15, T16
IGBT
1200 V
75 A
Inverter Switch
D11, D12, D13, D14,
D15, D16
FWD
NTC
1200 V
100 A
Inverter Diode
Thermistor
Rt
Copyright Vincotech
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datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow E2 packages see vincotech.com website.
Package data
Package data for flow E2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-Ex126PA075M7-L197F78x-D5-14
27 May. 2019
Outline updated
14
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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27 May. 2019 / Revision 5
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Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-EY12PNA025M7-L187C78T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
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