10-EY124PA016ME-LP49F18T [VINCOTECH]
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;
| 型号： | 10-EY124PA016ME-LP49F18T |
| 厂家： | 
VINCOTECH |
| 描述： | High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up |
| 文件： | 总22页 (文件大小：8778K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-EY124PA016ME-LP49F18T
datasheet
fastPACK E2 SiC
1200 V / 16 mΩ
Features
flow E2 12 mm housing
● Compact and low inductive design
● High frequency SiC MOSFET
● Integrated NTC
Schematic
Target applications
● Charging Stations
● Power Supply
● Welding & Cutting
Types
● 10-EY124PA016ME-LP49F18T
Copyright Vincotech
1
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
H-Bridge Switch - Lo side
VDSS
Drain-source voltage
1200
71
V
A
ID
Drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
Peak drain current
tp limited by Tjmax
Tj = Tjmax
240
A
Ptot
Total power dissipation
Gate-source voltage
Maximum Junction Temperature
126
W
V
VGSS
-4 / 15
175
Tjmax
°C
H-Bridge Switch - Hi side
VDSS
Drain-source voltage
1200
71
V
A
ID
Drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
Peak drain current
tp limited by Tjmax
Tj = Tjmax
240
A
Ptot
Total power dissipation
Gate-source voltage
Maximum Junction Temperature
126
W
V
VGSS
-4 / 15
175
Tjmax
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
min. 12,7
9,14
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
2
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
H-Bridge Switch - Lo side
Static
25
11,2
1,8
17
21
23
20,8
rDS(on)
Drain-source on-state resistance
15
80
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
0
0,02
25
25
25
2,5
20
3,6
500
38
V
15
0
0
nA
µA
Ω
0
0
2
0,85
236
6714
258
16
Qg
Gate charge
-4/15
800
1000
80
0
25
25
25
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 100 kHz
0
0
pF
V
40
4,6
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
0,75
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
19,84
18,88
18,56
6,72
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
6,4
6,4
Rgon = 2 Ω
Rgoff = 2 Ω
42,24
44,8
td(off)
Turn-off delay time
Fall time
125
150
25
ns
45,76
9,4
-4/15
600
64
tf
125
150
25
9,22
ns
9,44
QrFWD=0,776 µC
QrFWD=1,06 µC
QrFWD=1,17 µC
0,365
0,35
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
0,366
0,125
0,118
0,129
Eoff
125
150
Copyright Vincotech
3
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
H-Bridge Switch - Hi side
Static
25
11,2
1,8
17
21
23
20,8
rDS(on)
Drain-source on-state resistance
15
80
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
0
0,02
25
25
25
2,5
20
3,6
500
38
V
15
0
0
nA
µA
Ω
0
0
2
0,85
236
6714
258
16
Qg
Gate charge
-4/15
800
1000
80
0
25
25
25
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 100 kHz
0
0
pF
V
40
4,6
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
0,75
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
19,84
18,88
18,56
6,72
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
6,4
6,4
Rgon = 2 Ω
Rgoff = 2 Ω
42,24
44,8
td(off)
Turn-off delay time
Fall time
125
150
25
ns
45,76
9,4
-4/15
600
64
tf
125
150
25
9,22
ns
9,44
QrFWD=0,776 µC
QrFWD=1,06 µC
QrFWD=1,17 µC
0,365
0,35
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
0,366
0,125
0,118
0,129
Eoff
125
150
Copyright Vincotech
4
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
5
kΩ
%
R100 = 493 Ω
100
-5
5
245
1,4
mW
mW/K
K
d
25
B(25/50)
Tol. ±2 %
Tol. ±2 %
3375
3437
B(25/100)
B-value
K
Vincotech Thermistor Reference
K
Copyright Vincotech
5
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
H-Bridge Switch - Lo side Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
250
200
VGS
:
-20 V
-18 V
-16 V
-14 V
-12 V
-10 V
-8 V
-6 V
-4 V
-2 V
0 V
200
150
100
50
100
0
2 V
4 V
-100
-200
-300
6 V
8 V
10 V
12 V
14 V
16 V
18 V
20 V
0
0
1
2
3
4
5
6
7
8
-10,0 -7,5
-5,0 -2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
14
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -20 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
0,752
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,19E-02
9,26E-02
3,53E-01
1,55E-01
6,57E-02
3,38E-02
2,61E+00
5,45E-01
9,51E-02
2,37E-02
3,84E-03
5,95E-04
Copyright Vincotech
6
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
H-Bridge Switch - Lo side Characteristics
figure 5.
MOSFET
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
14
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
7
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
H-Bridge Switch - Hi side Characteristics
figure 6.
MOSFET
figure 7.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
250
200
VGS
:
-20 V
-18 V
-16 V
-14 V
-12 V
-10 V
-8 V
-6 V
-4 V
-2 V
0 V
200
150
100
50
100
0
2 V
4 V
-100
-200
-300
6 V
8 V
10 V
12 V
14 V
16 V
18 V
20 V
0
0
1
2
3
4
5
6
7
8
-10,0 -7,5
-5,0 -2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
14
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -20 V to 20 V in steps of 2 V
figure 8.
MOSFET
figure 9.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
0,752
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,19E-02
9,26E-02
3,53E-01
1,55E-01
6,57E-02
3,38E-02
2,61E+00
5,45E-01
9,51E-02
2,37E-02
3,84E-03
5,95E-04
Copyright Vincotech
8
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
H-Bridge Switch - Hi side Characteristics
figure 10.
MOSFET
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
14
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
9
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
H-Bridge Switching Characteristics - Lo side
figure 11.
MOSFET
figure 12.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
600
-4/15
2
V
V
Ω
Ω
125 °C
150 °C
600
-4/15
64
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 13.
MOSFET
figure 14.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
1,0
0,8
0,6
0,4
0,2
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
600
-4/15
2
V
V
Ω
125 °C
150 °C
600
-4/15
64
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
10
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
H-Bridge Switching Characteristics - Lo side
figure 15.
MOSFET
figure 16.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
-1
10
0
10
td(off)
td(off)
-1
10
td(on)
td(on)
tf
-2
10
tr
tf
tr
-2
10
-3
10
-3
10
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
-4/15
2
°C
V
150
600
-4/15
64
°C
V
VDS
=
=
=
=
VDS
=
=
=
VGS
Rgon
Rgoff
VGS
ID
V
V
Ω
Ω
A
2
figure 17.
MOSFET
figure 18.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
=
=
=
At
600
-4/15
2
V
V
Ω
At
600
-4/15
64
V
25 °C
25 °C
VGS
VGS
ID
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
11
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
H-Bridge Switching Characteristics - Lo side
figure 19.
MOSFET
figure 20.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-4/15
2
V
V
Ω
At
600
V
V
A
25 °C
25 °C
125 °C
150 °C
-4/15
64
125 °C
150 °C
Tj:
Tj:
Rgon
figure 21.
MOSFET
figure 22.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
200
175
150
125
100
75
200
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
50
50
IRM
25
25
0
0
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
V
V
A
25 °C
25 °C
-4/15
2
125 °C
150 °C
-4/15
64
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
12
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
H-Bridge Switching Characteristics - Lo side
figure 23.
MOSFET
figure 24.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
40000
60000
50000
40000
30000
20000
10000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
35000
30000
25000
20000
15000
10000
5000
0
dirr/dt ──────
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-4/15
2
V
V
Ω
At
600
-4/15
64
V
25 °C
25 °C
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
figure 25.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
175
ID MAX
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
Copyright Vincotech
13
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
H-Bridge Switching Characteristics - Hi side
figure 26.
MOSFET
figure 27.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
600
-4/15
2
V
V
Ω
Ω
125 °C
150 °C
600
-4/15
64
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 28.
MOSFET
figure 29.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
1,0
0,8
0,6
0,4
0,2
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
600
-4/15
2
V
V
Ω
125 °C
150 °C
600
-4/15
64
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
14
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
H-Bridge Switching Characteristics - Hi side
figure 30.
MOSFET
figure 31.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
-1
10
0
10
td(off)
td(off)
-1
10
td(on)
td(on)
tf
-2
10
tr
tf
tr
-2
10
-3
10
-3
10
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
-4/15
2
°C
V
150
600
-4/15
64
°C
V
VDS
=
=
=
=
VDS
=
=
=
VGS
Rgon
Rgoff
VGS
ID
V
V
Ω
Ω
A
2
figure 32.
MOSFET
figure 33.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
=
=
=
At
600
-4/15
2
V
V
Ω
At
600
-4/15
64
V
25 °C
25 °C
VGS
VGS
ID
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
15
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
H-Bridge Switching Characteristics - Hi side
figure 34.
MOSFET
figure 35.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-4/15
2
V
V
Ω
At
600
V
V
A
25 °C
25 °C
125 °C
150 °C
-4/15
64
125 °C
150 °C
Tj:
Tj:
Rgon
figure 36.
MOSFET
figure 37.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
200
175
150
125
100
75
200
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
50
50
IRM
25
25
0
0
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
V
V
A
25 °C
25 °C
-4/15
2
125 °C
150 °C
-4/15
64
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
16
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
H-Bridge Switching Characteristics - Hi side
figure 38.
MOSFET
figure 39.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
40000
60000
50000
40000
30000
20000
10000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
35000
30000
25000
20000
15000
10000
5000
0
dirr/dt ──────
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-4/15
2
V
V
Ω
At
600
-4/15
64
V
25 °C
25 °C
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
figure 40.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
175
ID MAX
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
Copyright Vincotech
17
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
Switching Definitions
figure 41.
MOSFET
figure 42.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 43.
MOSFET
figure 44.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
18
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
Switching Definitions
figure 45.
FWD
figure 46.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 47.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
19
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-EY124PA016ME-LP49F18T
10-EY124PA016ME-LP49F18T-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
AC2
AC2
AC2
AC2
S3
3,2
0
0
2
0
3
3,2
0
3,2
3,2
9,6
12,8
25,6
25,6
32
4
5
3,2
3,2
3,2
0
6
G3
7
S1
8
G1
9
3,2
0
AC1
AC1
AC1
AC1
T1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
32
3,2
0
35,2
35,2
48
3,2
0
48
T2
32
48
DC-1
DC-1
DC-1
DC-1
G2
32
44,8
41,6
41,6
48
32
28,8
28,8
28,8
32
44,8
32
S2
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC-2
DC-2
DC-2
DC-2
S4
28,8
32
32
28,8
25,6
22,4
19,2
16
32
32
32
32
28,8
32
16
6,4
6,4
3,2
0
28,8
32
32
28,8
28,8
3,2
0
G4
Copyright Vincotech
20
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
Pinout
DC+
21-28
T3
T1
G3
G1
08
06
S3
05
S1
07
AC1
09-12
AC2
01-04
T4
T2
G4
34
G2
19
S2
20
S4
33
Rt
DC-1
15-18
DC-2
29-32
T1
13
T2
14
Identification
Component
Voltage
Current
Function
Comment
ID
T2, T4
T1, T3
Rt
MOSFET
MOSFET
1200 V
1200 V
16 mΩ
16 mΩ
H-Bridge Switch - Lo side
H-Bridge Switch - Hi side
Thermistor
Thermistor
Copyright Vincotech
21
31 Mar. 2020 / Revision 1
10-EY124PA016ME-LP49F18T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow E2 packages see vincotech.com website.
Package data
Package data for flow E2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-EY124PA016ME-LP49F18T-D1-14
31 Mar. 2020
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
22
31 Mar. 2020 / Revision 1
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