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10-EZ126PA025M7-L858F78T [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
10-EZ126PA025M7-L858F78T
型号： 10-EZ126PA025M7-L858F78T
厂家： VINCOTECH    VINCOTECH
描述：

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
文件： 总16页 (文件大小：3286K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
flowPACK E1  
1200 V / 25 A  
Features  
flow E1 12 mm housing  
● IGBT M7 with low VCEsat and improved EMC behavior  
● Standard industrial housing  
● Optimized Rth(j-s) with Phase Change Material  
● Built-in NTC  
Press-fit pin  
Solder pin  
Schematic  
Target applications  
● Industrial Drives  
Types  
● 10-EZ126PA025M7-L858F78T  
● 10-E1126PA025M7-L858F78Z  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Switch  
VCES  
Collector-emitter voltage  
1200  
33  
V
A
IC  
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj =150 °C  
ICRM  
Ptot  
VGES  
tSC  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
50  
A
79  
W
V
±20  
9,5  
175  
Short circuit ratings  
VGE = 15 V  
Vcc = 800 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
Copyright Vincotech  
1
30 May. 2019 / Revision 4  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
1200  
35  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj limited by Tjmax  
Tj = Tjmax  
50  
A
71  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Module Properties  
Thermal Properties  
Storage temperature  
Tstg  
Tjop  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
V
Visol  
Isolation voltage  
Creepage distance  
Clearance  
tp = 1 min  
V
min. 12,7  
8,62  
mm  
mm  
mm  
with solder pins  
with Press-fit pins  
8,62  
Comparative Tracking Index  
*100 % tested in production  
CTI  
≥ 600  
Copyright Vincotech  
2
30 May. 2019 / Revision 4  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
10  
0,0025 25  
25  
5,4  
6,0  
6,6  
V
V
1,65  
1,89  
1,95  
2,15  
Collector-emitter saturation voltage  
VCEsat  
15  
25  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
70  
µA  
nA  
Ω
20  
25  
500  
none  
4800  
170  
57  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
#VALUE!  
0
10  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
15  
600  
25  
180  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,20  
K/W  
Dynamic  
25  
147  
149  
145  
29  
Turn-on delay time  
td(on)  
125  
150  
25  
Rise time  
tr  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
33  
34  
Rgon = 16 Ω  
Rgoff = 16 Ω  
ns  
171  
191  
196  
95  
110  
115  
2,06  
2,66  
2,82  
1,67  
2,18  
Turn-off delay time  
Fall time  
td(off)  
±15  
600  
25  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 2,5 μC  
= 3,9 μC  
= 4,3 μC  
Turn-on energy (per pulse)*  
Eon  
mWs  
125  
Eoff  
Turn-off energy (per pulse)*  
* Ls = 14 nH  
150  
2,29  
Copyright Vincotech  
3
30 May. 2019 / Revision 4  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Diode  
Static  
25  
1,63  
1,70  
1,69  
2,1  
35  
VF  
IR  
125  
150  
Forward voltage  
25  
V
Reverse leakage current  
1200  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,34  
K/W  
25  
21  
23  
23  
IRRM  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
Peak recovery current  
A
254  
367  
404  
2,54  
3,88  
4,28  
0,884  
1,45  
1,61  
217  
134  
132  
trr  
Qr  
Reverse recovery time  
ns  
di/dt = 645 A/μs  
di/dt = 673 A/μs ±15  
di/dt = 633 A/μs  
600  
25  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
Thermistor  
Rated resistance  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
5
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 493 Ω  
-5  
+5  
245  
1,4  
mW  
mW/K  
K
B(25/50) Tol. ±2 %  
B(25/100) Tol. ±2 %  
3375  
3437  
B-value  
K
Vincotech NTC Reference  
K
Copyright Vincotech  
4
30 May. 2019 / Revision 4  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
Inverter Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
80  
80  
VGE  
:
7
V
V
V
I
I
8
9
10  
11  
12  
13  
14  
15  
16  
17  
V
V
V
V
V
V
V
V
60  
40  
20  
0
60  
40  
20  
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)  
VC E (V)  
tp  
=
250  
15  
μs  
25 °C  
125 °C  
150 °C  
tp  
Tj  
=
=
250  
125  
μs  
°C  
VGE  
=
V
Tj:  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
25  
I
20  
Z
100  
15  
10  
5
0,5  
10-1  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10-2  
10-5  
0
0
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
2
4
6
8
10  
12  
14  
VG E (V)  
tp  
=
100  
10  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
V
Tj:  
=
1,20  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
7,19E-02  
1,76E-01  
6,46E-01  
2,16E-01  
8,54E-02  
2,96E+00  
3,16E-01  
6,48E-02  
1,08E-02  
1,15E-03  
Copyright Vincotech  
5
30 May. 2019 / Revision 4  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
Inverter Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
I C = f(VCE  
)
I
D =  
single pulse  
80  
Ts  
=
ºC  
VGE  
=
±15  
V
Tj =  
Tjmax  
Copyright Vincotech  
6
30 May. 2019 / Revision 4  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
Inverter Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
tp / T  
1,34  
Tj:  
R th(j-s)  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
7,90E-02  
1,38E-01  
5,15E-01  
3,34E-01  
1,30E-01  
1,40E-01  
2,29E+00  
2,89E-01  
5,53E-02  
1,22E-02  
2,48E-03  
3,42E-04  
Thermistor Characteristics  
figure 1.  
Typical NTC characteristic  
Thermistor  
Typical Thermistor resistance values  
as a function of temperature  
R = f(T)  
Copyright Vincotech  
7
30 May. 2019 / Revision 4  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
Inverter Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
E
E
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
=
600  
±15  
16  
V
V
Ω
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
600  
±15  
25  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
R goff  
16  
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
E
E
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
600  
±15  
16  
V
Tj:  
VCE  
VGE  
I C  
=
=
=
600  
±15  
25  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
V
R gon  
Ω
Copyright Vincotech  
8
30 May. 2019 / Revision 4  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
Inverter Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
t
t
With an inductive load at  
With an inductive load at  
Tj =  
150  
600  
±15  
16  
°C  
V
Tj =  
150  
600  
±15  
25  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
R gon  
R goff  
V
VGE  
I C  
Ω
Ω
16  
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(I C  
)
trr = f(R gon  
)
t
t
600  
600  
At  
VCE=  
V
At  
VCE  
=
V
V
A
25 °C  
25 °C  
VGE  
R gon  
=
=
±15  
V
Tj:  
VGE  
I C  
=
±15  
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
16  
Ω
=
25  
Copyright Vincotech  
9
30 May. 2019 / Revision 4  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
Inverter Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
600  
At  
VCE  
VGE  
R gon  
=
600  
±15  
16  
V
V
Ω
At  
VCE  
VGE  
I C  
=
V
V
A
25 °C  
25 °C  
=
Tj:  
=
±15  
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
=
25  
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon)  
I
I
At  
VCE  
=
600  
±15  
16  
V
V
Ω
At  
VCE  
VGE  
I C  
=
600  
±15  
25  
V
V
A
25 °C  
25 °C  
VGE  
=
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
=
Copyright Vincotech  
10  
30 May. 2019 / Revision 4  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
Inverter Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon)  
diF/dt  
dir r/dt  
diF/dt  
dirr/dt  
t
t
i
i
600  
At  
VCE  
=
V
V
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
600  
±15  
25  
V
25 °C  
125 °C  
150 °C  
VGE  
=
=
±15  
=
V
A
Tj:  
Tj:  
R gon  
16  
Ω
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
IC MAX  
I
I
I
V
At  
Tj =  
125  
°C  
Ω
R gon  
R goff  
=
=
16  
16  
Ω
Copyright Vincotech  
11  
30 May. 2019 / Revision 4  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
Inverter Switching Definitions  
General conditions  
T j  
=
=
=
125 °C  
R gon  
R goff  
16 Ω  
16 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
VGE (0%) =  
-15  
15  
V
VGE (0%) =  
-15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
600  
25  
V
600  
25  
V
A
A
tdoff  
=
191  
ns  
tdon  
=
149  
ns  
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
VC (100%) =  
I C (100%) =  
tf =  
600  
25  
V
VC (100%) =  
I C (100%) =  
600  
25  
V
A
A
110  
ns  
tr  
=
33  
ns  
Copyright Vincotech  
12  
30 May. 2019 / Revision 4  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
Inverter Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
600  
25  
V
I F (100%) =  
Q r (100%) =  
25  
A
A
3,88  
μC  
23  
A
trr  
=
367  
ns  
Copyright Vincotech  
13  
30 May. 2019 / Revision 4  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
Ordering Code & Marking  
Version  
without thermal paste 12 mm housing with Press-fit pins  
without thermal paste 12 mm housing with solder pins  
with thermal paste 12 mm housing with Press-fit pins  
with thermal paste 12 mm housing with solder pins  
Ordering Code  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
10-EZ126PA025M7-L858F78T-/3/  
10-E1126PA025M7-L858F78Z-/3/  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVVWWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table  
Pin  
X
Y
Function  
DC+  
Solder pin  
12,8  
16  
9,6  
9,6  
9,6  
9,6  
9,6  
6,4  
3,2  
0
1
2
DC+  
Therm1  
Therm2  
DC-2  
S13  
3
4
22,4  
25,6  
32  
5
6
32  
7
32  
DC-1  
S11  
8
32  
9
28,8  
6,4  
0
G11  
Press-fit pin  
10  
0
Ph1  
11  
12  
13  
3,2  
0
0
0
0
6,4  
Ph1  
G12  
G14  
14  
15  
16  
17  
18  
19  
20  
21  
22  
0
0
16  
Ph2  
Ph2  
G16  
Ph3  
Ph3  
G15  
S15  
DC-3  
G13  
19,2  
25,6  
25,6  
25,6  
25,6  
25,6  
22,4  
16  
0
3,2  
6,4  
28,8  
32  
32  
32  
Copyright Vincotech  
14  
30 May. 2019 / Revision 4  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
T11, T12, T13, T14,  
T15, T16  
IGBT  
1200 V  
25 A  
25 A  
Inverter Switch  
D11, D12, D13, D14,  
D15, D16  
FWD  
NTC  
1200 V  
Inverter Diode  
Thermistor  
Rt  
Copyright Vincotech  
15  
30 May. 2019 / Revision 4  
10-EZ126PA025M7-L858F78T  
10-E1126PA025M7-L858F78Z  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow E1 packages see vincotech.com website.  
Package data  
Package data for flow E1 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
Correction of Ic/If values  
Outline updated  
1,2  
14  
10-Ex126PA025M7-L858F78x-D4-14  
30 May. 2019  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
16  
30 May. 2019 / Revision 4  

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