10-F007NRA050SG-P966F09 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 10-F007NRA050SG-P966F09 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总32页 (文件大小：5285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-F007NRA050SG-P966F09
datasheet
flowNPC 0 IGBT
1200 V / 50 A
Features
flow 0 17 mm housing
● Neutral point clamped inverter
● Reactive power capability
● Low inductance layout
● Improved LVRT capability
Schematic
Target applications
● Solar inverter
● UPS
Types
● 10-F007NRA050SG-P966F09
Copyright Vincotech
1
28 Jul. 2021 / Revision 3
10-F007NRA050SG-P966F09
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
650
51
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
119
±20
5
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 400 V
µs
°C
Tjmax
Maximum junction temperature
175
Buck Diode
VRRM
Peak repetitive reverse voltage
650
23
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
70
A
Single Half Sine Wave,
tp = 8,3 ms
Tj = 150 °C
Ts = 80 °C
50
A
Tj = Tjmax
47
W
°C
Tjmax
Maximum junction temperature
175
Buck Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
650
18
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
33
W
°C
Tjmax
Maximum junction temperature
175
28 Jul. 2021 / Revision 3
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2
10-F007NRA050SG-P966F09
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
1200
42
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
105
101
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
25
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
100
50
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
61
Tjmax
Maximum junction temperature
175
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
1200
16
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
14
A
Ptot
36
W
°C
Tjmax
Maximum junction temperature
150
28 Jul. 2021 / Revision 3
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3
10-F007NRA050SG-P966F09
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
4000
2500
V
AC Voltage
tp = 1 min
V
>12,7
>12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
28 Jul. 2021 / Revision 3
Copyright Vincotech
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10-F007NRA050SG-P966F09
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0008
50
25
4,2
5,1
5,6
V
V
25
1,38
1,89
2,17
2,22(1)
15
0
125
650
0
25
25
2,8
µA
nA
Ω
0
150
None
3100
90
Cies
pF
pF
f = 1 Mhz
0
20
25
Cres
Reverse transfer capacitance
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,8
K/W
25
66
td(on)
Turn-on delay time
Rise time
125
150
25
66,6
67
ns
ns
7,4
tr
125
150
25
8,8
9
Rgon = 4 Ω
Rgoff = 4 Ω
103,2
124
td(off)
Turn-off delay time
Fall time
125
150
25
ns
129,8
6,92
11,96
16,34
0,134
0,18
0,192
0,254
0,455
0,498
±15
350
35
tf
125
150
25
ns
QrFWD=0,072 µC
QrFWD=0,075 µC
QrFWD=0,075 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
28 Jul. 2021 / Revision 3
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10-F007NRA050SG-P966F09
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,37
1,55
1,63
3,2
1,55(1)
320
VF
IR
Forward voltage
16
125
150
25
V
Reverse leakage current
Thermal
Vr = 650 V
µA
150
48
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,03
K/W
25
20,69
19,95
19,58
9,07
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
8,95
ns
8,97
0,072
0,075
0,075
7,853x10-3
6,428x10-3
7,703x10-3
di/dt=3796 A/µs
di/dt=5003 A/µs
di/dt=4290 A/µs
Qr
Recovered charge
±15
350
35
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
6945
6615
6348
(dirf/dt)max
125
150
28 Jul. 2021 / Revision 3
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10-F007NRA050SG-P966F09
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Buck Sw. Protection Diode
Static
25
1,23
1,67
1,54
1,87(1)
0,14
VF
IR
Forward voltage
10
V
125
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,87
K/W
28 Jul. 2021 / Revision 3
Copyright Vincotech
7
10-F007NRA050SG-P966F09
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0012
35
25
5,3
5,8
6,3
V
25
1,58
2,07
2,13
2,07(1)
15
0
V
125
1200
0
25
25
5
µA
nA
Ω
20
120
None
2000
70
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
270
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,94
K/W
25
44,2
44,6
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
5,4
tr
125
25
8,4
Rgon = 4 Ω
Rgoff = 4 Ω
147,6
192,2
70,47
110,11
0,372
0,631
1,25
td(off)
Turn-off delay time
Fall time
ns
125
25
±15
350
35
tf
ns
125
25
QrFWD=2,24 µC
QrFWD=4,25 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
1,92
28 Jul. 2021 / Revision 3
Copyright Vincotech
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10-F007NRA050SG-P966F09
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
2,3
2,74(1)
VF
IR
Forward voltage
25
125
150
25
2,41
V
2,79(1)
60
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
1600
1,56
3300
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
K/W
25
65,21
66,56
43,39
122,12
2,24
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
di/dt=2585 A/µs
di/dt=2622 A/µs
Qr
±15
350
35
μC
125
25
4,25
0,591
1,18
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
5361
3861
(dirf/dt)max
125
28 Jul. 2021 / Revision 3
Copyright Vincotech
9
10-F007NRA050SG-P966F09
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Sw. Protection Diode
Static
25
2,01
1,66
3,5(1)
250
VF
IR
Forward voltage
7
V
125
Reverse leakage current
Thermal
Vr = 1200 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,92
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
28 Jul. 2021 / Revision 3
Copyright Vincotech
10
10-F007NRA050SG-P966F09
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
125
VGE
:
7 V
8 V
125
100
75
50
25
0
9 V
100
75
50
25
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
VGE
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
40
10
-1
30
20
10
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
0,795
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,19E-02
1,10E-01
4,12E-01
1,04E-01
5,73E-02
4,98E-02
2,26E+00
4,08E-01
9,23E-02
2,31E-02
5,67E-03
8,49E-04
28 Jul. 2021 / Revision 3
Copyright Vincotech
11
10-F007NRA050SG-P966F09
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
28 Jul. 2021 / Revision 3
Copyright Vincotech
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10-F007NRA050SG-P966F09
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,032
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,81E-01
4,90E-01
7,30E-01
4,51E-01
1,81E-01
1,80E+00
1,58E-01
4,04E-02
4,19E-03
6,96E-04
28 Jul. 2021 / Revision 3
Copyright Vincotech
13
10-F007NRA050SG-P966F09
datasheet
Buck Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,873
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
6,53E-02
1,48E-01
1,31E+00
7,32E-01
4,04E-01
2,11E-01
3,94E+00
4,48E-01
5,96E-02
1,36E-02
2,79E-03
5,37E-04
28 Jul. 2021 / Revision 3
Copyright Vincotech
14
10-F007NRA050SG-P966F09
datasheet
Boost Switch Characteristics
figure 10.
IGBT
figure 11.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
75
50
25
0
75
50
25
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
125
μs
°C
25 °C
Tj:
VGE
Tj =
V
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 12.
IGBT
figure 13.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
35
10
30
25
20
15
10
5
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,938
25 °C
Tj:
VCE
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,15E-01
4,15E-01
2,99E-01
7,22E-02
3,82E-02
9,47E-01
1,24E-01
4,81E-02
5,86E-03
5,62E-04
28 Jul. 2021 / Revision 3
Copyright Vincotech
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10-F007NRA050SG-P966F09
datasheet
Boost Switch Characteristics
figure 14.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
10µs
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
28 Jul. 2021 / Revision 3
Copyright Vincotech
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10-F007NRA050SG-P966F09
datasheet
Boost Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,556
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
4,65E-02
1,06E-01
4,71E-01
4,83E-01
2,34E-01
1,81E-01
3,38E-02
4,86E+00
8,11E-01
1,09E-01
3,07E-02
7,03E-03
1,25E-03
3,28E-04
28 Jul. 2021 / Revision 3
Copyright Vincotech
17
10-F007NRA050SG-P966F09
datasheet
Boost Sw. Protection Diode Characteristics
figure 17.
FWD
figure 18.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
1,919
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
8,83E-02
4,61E-01
8,36E-01
3,41E-01
1,94E-01
2,18E+00
1,63E-01
4,26E-02
5,57E-03
7,35E-04
28 Jul. 2021 / Revision 3
Copyright Vincotech
18
10-F007NRA050SG-P966F09
datasheet
Thermistor Characteristics
figure 19.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
28 Jul. 2021 / Revision 3
Copyright Vincotech
19
10-F007NRA050SG-P966F09
datasheet
Buck Switching Characteristics
figure 20.
IGBT
figure 21.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eoff
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eoff
Eon
0
10
20
30
40
50
60
70
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
125 °C
150 °C
350
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Rgon
Rgoff
Ω
Ω
4
figure 22.
FWD
figure 23.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,010
0,008
0,006
0,004
0,002
0,000
0,008
0,007
0,006
0,005
0,004
0,003
0,002
0,001
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
150 °C
350
±15
35
V
V
A
125 °C
150 °C
Tj:
Tj:
28 Jul. 2021 / Revision 3
Copyright Vincotech
20
10-F007NRA050SG-P966F09
datasheet
Buck Switching Characteristics
figure 24.
IGBT
figure 25.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
-1
10
-1
10
td(on)
tr
tf
tf
tr
-2
10
-2
10
-3
10
-3
10
0
10
20
30
40
50
60
70
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
4
°C
150
350
±15
35
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
4
figure 26.
FWD
figure 27.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
150 °C
350
±15
35
V
V
A
125 °C
150 °C
Tj:
Tj:
28 Jul. 2021 / Revision 3
Copyright Vincotech
21
10-F007NRA050SG-P966F09
datasheet
Buck Switching Characteristics
figure 28.
FWD
figure 29.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
0,09
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,12
0,10
0,08
0,06
0,04
0,02
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
125 °C
150 °C
350
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
A
Ω
figure 30.
FWD
figure 31.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
22,5
20,0
17,5
15,0
12,5
10,0
7,5
30
25
20
15
10
5
IRM
IRM
IRM
IRM
IRM
5,0
2,5
0,0
0
0,0
0
10
20
30
40
50
60
70
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
125 °C
150 °C
350
±15
35
V
125 °C
Tj:
V
A
Ω
28 Jul. 2021 / Revision 3
Copyright Vincotech
22
10-F007NRA050SG-P966F09
datasheet
Buck Switching Characteristics
figure 32.
FWD
figure 33.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
9000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
8000
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
60
70
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
150 °C
350
±15
35
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 34.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
4
°C
Ω
Rgon
Rgoff
=
=
4
Ω
28 Jul. 2021 / Revision 3
Copyright Vincotech
23
10-F007NRA050SG-P966F09
datasheet
Boost Switching Characteristics
figure 35.
IGBT
figure 36.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
0
10
20
30
40
50
60
70
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
125 °C
350
±15
35
V
125 °C
V
V
A
Rgon
Rgoff
Ω
Ω
4
figure 37.
FWD
figure 38.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
125 °C
350
±15
35
V
125 °C
V
A
Ω
28 Jul. 2021 / Revision 3
Copyright Vincotech
24
10-F007NRA050SG-P966F09
datasheet
Boost Switching Characteristics
figure 39.
IGBT
figure 40.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
tf
td(on)
tf
-1
10
-1
10
td(on)
tr
tr
-2
10
-2
10
-3
10
-3
10
0
10
20
30
40
50
60
70
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
350
±15
4
°C
125
350
±15
35
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
4
figure 41.
FWD
figure 42.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
350
±15
35
V
125 °C
V
A
28 Jul. 2021 / Revision 3
Copyright Vincotech
25
10-F007NRA050SG-P966F09
datasheet
Boost Switching Characteristics
figure 43.
FWD
figure 44.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
125 °C
350
±15
35
V
125 °C
V
V
A
Ω
figure 45.
FWD
figure 46.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
100
80
60
40
20
0
90
80
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
125 °C
350
±15
35
V
125 °C
V
A
Ω
28 Jul. 2021 / Revision 3
Copyright Vincotech
26
10-F007NRA050SG-P966F09
datasheet
Boost Switching Characteristics
figure 47.
FWD
figure 48.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
8000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
dirr/dt ──────
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
350
±15
35
V
V
A
125 °C
figure 49.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
80
IC MAX
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
125
°C
Rgon
Rgoff
=
=
4
4
Ω
Ω
28 Jul. 2021 / Revision 3
Copyright Vincotech
27
10-F007NRA050SG-P966F09
datasheet
Switching Definitions
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 52.
IGBT
figure 53.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
28 Jul. 2021 / Revision 3
Copyright Vincotech
28
10-F007NRA050SG-P966F09
datasheet
Switching Definitions
figure 54.
FWD
figure 55.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
28 Jul. 2021 / Revision 3
Copyright Vincotech
29
10-F007NRA050SG-P966F09
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-F007NRA050SG-P966F09
10-F007NRA050SG-P966F09-/7/
10-F007NRA050SG-P966F09-/3/
With thermal paste (4,4 W/mK, PTM6000)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
G6
33,6
30,7
27,8
22
0
2
0
S4/6
G4
3
0
4
0
-DC
-DC
GND
S2
5
19,2
11,4
0
0
6
0
7
0
8
0
2,9
9,9
12,7
15,5
19,7
22,6
22,6
22,6
22,6
22,6
22,6
22,6
14,8
8,2
G2
9
0
Line
Line
Line
G1
10
11
12
13
14
15
16
17
18
19
20
21
0
0
0
0
S1
10,1
17,9
20,8
27,8
30,7
33,6
33,6
33,6
GND
+DC
+DC
G3
S3/5
G5
NTC1
NTC2
28 Jul. 2021 / Revision 3
Copyright Vincotech
30
10-F007NRA050SG-P966F09
datasheet
Pinout
+DC
15,16
T5
T1
D13
D1
19
G5
18 S3/5
17
G3
D9
D3
D4
12 G1
13 S1
GND
6,14
Line
9,10,11
T2
T6
D10
D14
8 G2
7 S2
NTC
D2
1
G6
2 S4/6
G4
3
NTC1
20
NTC2
21
-DC
4,5
Identification
Component
Voltage
Current
Function
Comment
ID
T5, T6
D3, D4
D13, D14
T1, T2
D2, D1
D9, D10
NTC
IGBT
FWD
650 V
650 V
50 A
16 A
10 A
35 A
25 A
7 A
Buck Switch
Buck Diode
FWD
650 V
Buck Sw. Protection Diode
Boost Switch
IGBT
1200 V
1200 V
1200 V
FWD
Boost Diode
FWD
Boost Sw. Protection Diode
Thermistor
Thermistor
28 Jul. 2021 / Revision 3
Copyright Vincotech
31
10-F007NRA050SG-P966F09
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New brand, PCM Rth values
10-F007NRA050SG-P966F09-D2-14
20 Jun. 2016
10-F007NRA050SG-P966F09-D3-14
28 Jul. 2021
Buck Diode change
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
28 Jul. 2021 / Revision 3
相关型号：
10-F0122PB100SC02-M819F09
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-F0122PB100SC03-M819F19
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-F0127PA008SC-L156E09
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-F0127PA025SC-L159E09
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-F012PMA005M7-P848A29
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-F012PMA010M7-P849A29
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-F012PMA015M7-P840A29
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-F012PNA005M7-P848C29
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-F012PNA015M7-P840C29
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
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