10-F112PMA050M7-P580A79 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 10-F112PMA050M7-P580A79 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总29页 (文件大小：8513K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-F112PMA050M7-P580A79
datasheet
flowPIM 1
1200 V / 50 A
Topology features
flow 1 17 mm housing
● Kelvin Emitter for improved switching performance
● Open Emitter configuration
● Temperature sensor
● Converter+Brake+Inverter
Component features
● Easy paralleling
● Low turn-off losses
● Low collector emitter saturation voltage
● Positive temperature coefficient
● Short tail current
● Switching optimized for EMC
Housing features
Schematic
● Base isolation: Al2O3
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Solder pin
Target applications
● Industrial Drives
Types
● 10-F112PMA050M7-P580A79
Copyright Vincotech
1
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
57
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
100
115
±20
9,5
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
45
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
100
78
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
Brake Switch
VCES
Collector-emitter voltage
1200
51
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
70
A
Ptot
107
±20
9,5
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
33
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
50
A
Ptot
62
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
54
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
350
610
65
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
>12,7
≥ 600
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
3
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,005
50
25
5,4
6
6,6
V
V
25
1,55
1,77
1,83
1,9(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
0,09
0,5
mA
µA
Ω
20
None
10000
350
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
130
VCC = 600 V
0/15
50
380
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,82
K/W
25
176
176
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
190
52
tr
125
150
25
58
60
Rgon = 8 Ω
Rgoff = 8 Ω
206
td(off)
Turn-off delay time
Fall time
125
150
25
229
ns
241
±15
600
50
92,14
124,72
122,14
4,82
6,38
6,25
2,98
4,25
5,03
tf
125
150
25
ns
QrFWD=4,93 µC
QrFWD=7,08 µC
QrFWD=8,04 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
4
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,66
1,78
1,79
2,1(1)
VF
IR
Forward voltage
50
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
40
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,22
K/W
25
28,72
32,83
32,97
339,05
434,87
511,31
4,93
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=338 A/µs
di/dt=450 A/µs
di/dt=498 A/µs
Qr
Recovered charge
±15
600
50
125
150
25
7,08
μC
8,04
1,79
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
2,59
mWs
A/µs
3,33
194,94
128,35
114,47
(dirf/dt)max
125
150
Copyright Vincotech
5
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,0035
35
25
5,4
6
6,6
V
V
25
1,47
1,64
1,68
1,85(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
80
µA
nA
Ω
20
200
None
7900
270
97
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
VCC = 600 V
0/15
35
260
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,89
K/W
25
199,4
172,4
167
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
111,2
109,2
110,4
437,6
485,4
497,2
64,65
99,99
107,31
4,87
tr
125
150
25
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
700
35
tf
125
150
25
ns
QrFWD=2,81 µC
QrFWD=4,53 µC
QrFWD=5,09 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
5,85
mWs
mWs
6,1
3
Eoff
125
150
3,88
4,1
Copyright Vincotech
6
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,63
1,7
2,1(1)
VF
IR
Forward voltage
25
125
150
V
1,69
Reverse leakage current
Thermal
Vr = 1200 V
25
35
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,54
K/W
25
17,92
19,64
20,47
269,22
397,4
448,88
2,81
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=310 A/µs
di/dt=311 A/µs
di/dt=260 A/µs
Qr
Recovered charge
0/15
700
35
125
150
25
4,53
μC
5,09
1,12
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
1,92
mWs
A/µs
2,21
132,1
79,89
77,49
(dirf/dt)max
125
150
Copyright Vincotech
7
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
0,99
0,912
0,908
1,21(1)
1,1(1)
VF
IR
Forward voltage
18
125
150
V
Reverse leakage current
Thermal
Vr = 1600 V
25
50
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,08
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
150
VGE
:
7 V
8 V
125
100
75
50
25
0
125
100
75
50
25
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
50
10
40
30
20
10
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,823
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,05E-02
8,54E-02
3,18E-01
2,80E-01
6,47E-02
3,43E-02
5,17E+00
1,03E+00
1,67E-01
5,49E-02
7,32E-03
6,46E-04
Copyright Vincotech
9
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
17,5
15,0
12,5
10,0
7,5
100µs
10
1
1ms
10ms
100ms
DC
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
50
100
150
200
250
300
350
400
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
50
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Inverter Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
150
125
100
75
10
0
10
-1
10
50
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
25
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,224
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
3,84E-02
9,89E-02
3,93E-01
4,67E-01
1,41E-01
8,52E-02
6,82E+00
9,92E-01
1,28E-01
3,75E-02
5,65E-03
5,44E-04
Copyright Vincotech
11
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Brake Switch Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
75
50
25
0
75
50
25
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 11.
IGBT
figure 12.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
35
10
30
25
20
15
10
5
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,888
25 °C
Tj:
VCE
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,56E-02
8,84E-02
3,30E-01
2,86E-01
8,94E-02
3,24E-02
1,67E-02
3,89E+00
7,65E-01
1,35E-01
4,71E-02
7,49E-03
8,15E-04
2,52E-04
Copyright Vincotech
12
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Brake Switch Characteristics
figure 13.
IGBT
figure 14.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
17,5
15,0
12,5
10,0
7,5
10µs
10
1
100µs
1ms
10ms
100ms
DC
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
50
100
150
200
250
300
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
35
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Brake Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,539
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,69E-02
1,06E-01
5,57E-01
4,68E-01
2,35E-01
8,77E-02
4,01E-02
5,05E+00
7,09E-01
1,01E-01
3,22E-02
5,52E-03
1,01E-03
5,52E-04
Copyright Vincotech
14
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Rectifier Diode Characteristics
figure 17.
Rectifier
figure 18.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
125
100
75
50
25
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,082
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
4,60E-02
1,23E-01
4,58E-01
3,31E-01
7,76E-02
4,64E-02
9,93E+00
1,00E+00
1,51E-01
5,61E-02
9,34E-03
1,55E-03
Copyright Vincotech
15
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Thermistor Characteristics
figure 19.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
16
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Inverter Switching Characteristics
figure 20.
IGBT
figure 21.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
5,0
5,0
2,5
2,5
0,0
0,0
0
20
40
60
80
100
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
8
figure 22.
FWD
figure 23.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
17
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Inverter Switching Characteristics
figure 24.
IGBT
figure 25.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(on)
0
10
td(on)
td(off)
td(off)
tr
tr
tf
-1
10
tf
-1
10
-2
10
-2
10
0
20
40
60
80
100
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
8
°C
V
150
600
±15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 26.
FWD
figure 27.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
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09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Inverter Switching Characteristics
figure 28.
FWD
figure 29.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
12
10
8
12
10
8
Qr
Qr
Qr
Qr
Qr
6
6
4
4
Qr
2
2
0
0
0
20
40
60
80
100
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 30.
FWD
figure 31.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
35
30
25
20
15
10
5
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
0
20
40
60
80
100
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
19
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Inverter Switching Characteristics
figure 32.
FWD
figure 33.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
1750
2250
2000
1750
1500
1250
1000
750
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
1500
1250
1000
750
500
250
0
500
250
0
0
20
40
60
80
100
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 34.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
Copyright Vincotech
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09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Brake Switching Characteristics
figure 35.
IGBT
figure 36.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
5,0
5,0
2,5
2,5
0,0
0,0
0
10
20
30
40
50
60
70
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
16
V
V
125 °C
150 °C
700
0/15
35
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
Ω
Ω
16
figure 37.
FWD
figure 38.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
16
V
125 °C
150 °C
700
0/15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
21
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Brake Switching Characteristics
figure 39.
IGBT
figure 40.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(off)
td(off)
0
10
td(on)
tr
td(on)
tr
-1
10
tf
tf
-1
10
-2
10
-2
10
0
10
20
30
40
50
60
70
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
700
0/15
16
°C
150
700
0/15
35
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
16
figure 41.
FWD
figure 42.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
16
V
125 °C
150 °C
700
0/15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
22
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Brake Switching Characteristics
figure 43.
FWD
figure 44.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
16
V
125 °C
150 °C
700
0/15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
figure 45.
FWD
figure 46.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
25
20
15
10
5
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
16
V
125 °C
150 °C
700
0/15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
23
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Brake Switching Characteristics
figure 47.
FWD
figure 48.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
450
1500
1250
1000
750
500
250
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
400
dirr/dt ──────
350
300
250
200
150
100
50
0
0
10
20
30
40
50
60
70
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
16
V
V
125 °C
150 °C
700
0/15
35
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
figure 49.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
80
IC MAX
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
24
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Switching Definitions
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 52.
IGBT
figure 53.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Switching Definitions
figure 54.
FWD
figure 55.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-F112PMA050M7-P580A79
10-F112PMA050M7-P580A79-/7/
10-F112PMA050M7-P580A79-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
G27
52,55
47,7
44,8
37,8
37,8
35
2
0
DC-Rect
DC-Rect
DC+Rect
DC+Rect
DC+Inv
DC+Inv
Therm1
Therm2
DC-3
G15
3
0
4
0
5
2,8
0
6
7
35
2,8
0
8
28
9
25,2
22,4
19,6
16,8
14
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
0
0
S15
0
DC-2
G13
11,2
8,4
0
0
S13
5,6
0
DC-1
G11
2,8
0
0
0
S11
0
28,5
28,5
28,5
28,5
28,5
28,5
28,5
28,5
28,5
28,5
25
16,9
8,6
2,8
Ph1
2,8
G12
7,5
S12
14,5
17,3
22
Ph2
G14
S14
29
Ph3
31,8
36,5
43,5
52,55
52,55
52,55
52,55
G16
S16
ACIn1
ACIn2
ACIn3
Br
DC-Br
Copyright Vincotech
27
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Pinout
DC+Rect
4,5
DC+Inv
6,7
T12
T14
T16
D11
D13
D15
G16
26
D27
G14
G12
20
D32
D34
D36
23
S16
27
S14
24
S12
21
AcIn1
28
Ph1
19
Br
31
AcIn2
29
Ph2
22
AcIn3
30
Ph3
25
D31
D33
D35
T27
T11
T13
T15
D12
D14
D16
G27
1
G11
17
G13
14
G15
11
S11
18
S13
15
S15
12
Rt
DC-2
13
DC-3
10
DC-1
16
DC-Br
32
DC-Rect
2,3
Therm1
8
Therm2
9
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
1200 V
50 A
Inverter Switch
T15, T16
D11, D12, D13, D14,
FWD
1200 V
50 A
Inverter Diode
D15, D16
T27
IGBT
FWD
1200 V
1200 V
35 A
25 A
Brake Switch
Brake Diode
D27
D31, D32, D33, D34,
D35, D36
Rectifier
NTC
1600 V
45 A
Rectifier Diode
Thermistor
Rt
Copyright Vincotech
28
09 Jun. 2022 / Revision 4
10-F112PMA050M7-P580A79
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format, module is unchanged
Separate datasheet
10-F112PMA050M7-P580A79-D4-14
9 Jun. 2022
Corrected collector current and continuous forward current
Conditions of maximum collector current and continuous
forward current added
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
09 Jun. 2022 / Revision 4
相关型号：
10-F112PNA035M7-P589C79
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
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