10-FU127PA025SC-L159E06 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 10-FU127PA025SC-L159E06 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总30页 (文件大小：2666K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FU127PA025SC-L159E06
datasheet
flow7PACK 0
1200 V / 25 A
Features
flow 0 12mm housing
● Compact flow 0 housing
● Trench Fieldstop IGBT4 technology
● Compact and low inductance layout
● Built-in NTC
Schematic
Target applications
● Motor Drives
● Power Generation
Types
● 10-FU127PA025SC-L159E06
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter\Brake Switch
VCES
IC
Collector-emitter voltage
1200
33
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
75
A
99
W
V
±20
tSC
Tj ≤ 150 °C
VGE = 15 V
10
µs
V
Short circuit ratings
VCC
800
Tjmax
Maximum Junction Temperature
175
°C
Copyright Vincotech
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datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
1200
34
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
50
A
Tj = Tjmax
74
W
°C
Maximum Junction Temperature
Tjmax
175
Brake Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
1200
20
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
20
A
Tj = Tjmax
46
W
°C
Maximum Junction Temperature
Tjmax
175
Brake Sw. Protection Diode
VRRM
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
1200
6
V
A
IF
Tj = Tjmax
Ts = 80°C
Ts = 80°C
IFRM
Ptot
6
A
Tj = Tjmax
25
W
°C
Maximum Junction Temperature
Tjmax
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
Isolation voltage
-40…(Tjmax - 25)
Visol
DC Test Voltage
tp = 2 s
4000
min. 12,7
9,1
V
Creepage distance
mm
mm
Clearance
Comparative Tracking Index
CTI
> 200
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
VGE = VCE
Gate-emitter threshold voltage
0,00085 25
25
5,3
5,8
6,3
V
V
1,58
1,96
2,22
2,28
2,07
VCEsat
125
150
Collector-emitter saturation voltage
15
25
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
0
1200
0
25
25
2,4
µA
nA
Ω
20
120
none
1450
50
Cies
Cres
Input capacitance
f = 1 MHz
0
25
25
pF
Reverse transfer capacitance
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,96
K/W
IGBT Switching
Turn-on delay time
Rise time
25
150
25
150
25
150
25
150
25
150
25
150
66
67
42
td(on)
tr
td(off)
tf
Rgoff = 16 Ω
Rgon = 16 Ω
43
ns
196
264
71
138
2,131
3,149
1,468
2,483
Turn-off delay time
Fall time
±15
600
25
QrFWD = 2,2 μC
QrFWD = 4,5 μC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
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Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
1,90
1,90
1,88
2,05
5,2
VF
Ir
125
150
Forward voltage
25
V
Reverse leakage current
1200
25
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,28
13
K/W
A
FWD Switching
25
IRRM
Peak recovery current
150
25
150
25
150
25
150
25
17
318
524
2,215
4,501
0,859
1,776
115
trr
Qr
Reverse recovery time
Recovered charge
ns
μC
di/dt = 565 A/μs
di/dt = 465 A/μs
±15
600
25
Erec
Reverse recovered energy
mWs
(dirf/dt)max
Peak rate of fall of recovery current
A/µs
150
92
Copyright Vincotech
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Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Brake Switch
Static
VGE(th)
VGE = VCE
Gate-emitter threshold voltage
0,00085 25
25
5,3
5,8
6,3
V
V
1,58
1,96
2,22
2,28
2,07
VCEsat
125
150
Collector-emitter saturation voltage
15
25
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
0
1200
0
25
25
2,4
µA
nA
Ω
20
120
none
1450
50
Cies
Cres
Input capacitance
f = 1 MHz
0
25
25
pF
Reverse transfer capacitance
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,96
K/W
IGBT Switching
25
124
123
124
td(on)
Turn-on delay time
125
150
25
44
Rgoff = 32 Ω
Rgon = 32 Ω
tr
Rise time
125
150
25
46
46
232
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
289
305
66
131
±15
600
25
tf
151
2,000
2,488
2,615
1,522
2,373
2,663
QrFWD = 1,4 μC
QrFWD = 2,6 μC
QrFWD = 2,9 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
Copyright Vincotech
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Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Brake Diode
Static
25
150
1,76
1,68
2,05
2,7
VF
Ir
Forward voltage
10
V
Reverse leakage current
1200
25
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
FWD Switching
2,07
9
K/W
25
IRRM
Peak recovery current
A
125
150
25
11
12
349
Reverse recovery time
Recovered charge
trr
Qr
125
150
25
125
150
25
125
150
25
542
576
ns
μC
di/dt = 422 A/μs
di/dt = 355 A/μs ±15
di/dt = 386 A/μs
1,424
2,577
2,854
0,554
1,069
1,189
26
600
25
Reverse recovered energy
Erec
mWs
125
23
(dirf/dt)max
Peak rate of fall of recovery current
A/µs
150
23
Brake Sw. Protection Diode
Static
25
150
1,65
1,51
1,6
VF
Ir
Forward voltage
3
V
Reverse leakage current
1200
25
250
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
2,80
K/W
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
21,5
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1486 Ω
-4,5
4,5
210
3,5
mW
mW/K
K
B(25/50)
3884
3964
B-value
B(25/100)
K
Vincotech NTC Reference
F
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datasheet
Inverter\Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
IGBT
Transient Thermal Impedance as function of Pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,96
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
9,34E-02
3,42E-01
3,61E-01
1,15E-01
5,33E-02
8,35E-01
1,19E-01
4,14E-02
7,70E-03
9,80E-04
Copyright Vincotech
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datasheet
Inverter\Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
V
V
At
single pulse
80
D =
Ts
VGE
Tj
=
ºC
V
=
±15
=
Tjmax
Copyright Vincotech
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datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
1,34
T j:
K/W
FWD thermal model values
R (K/W)
τ
(s)
4,04E-02
1,06E-01
3,22E-01
5,22E-01
2,45E-01
1,04E-01
4,68E+00
7,88E-01
1,34E-01
4,32E-02
9,75E-03
1,99E-03
Copyright Vincotech
10
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10-FU127PA025SC-L159E06
datasheet
Brake Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
150 °C
tp / T
2,07
T j:
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,0880E-02
1,5540E-01
7,7510E-01
5,3250E-01
3,5430E-01
1,9740E-01
4,2620E+00
5,0290E-01
7,8890E-02
2,6820E-02
5,0280E-03
9,0910E-04
Copyright Vincotech
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datasheet
Brake Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
150 °C
tp / T
2,80
T j:
K/W
FWD thermal model values
R (K/W)
τ
(s)
7,82E-02
1,95E-01
9,84E-01
6,58E-01
5,09E-01
3,7090E-01
2,45E+00
2,65E-01
4,77E-02
1,23E-02
2,70E-03
5,9830E-04
Copyright Vincotech
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datasheet
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R = f(T)
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(rg)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
150 °C
25 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
16
V
V
Ω
Ω
j
:
600
±15
25
V
V
A
VCE
VGE
=
=
=
=
T
VCE
VGE
I C
=
=
=
T j:
R gon
R goff
16
Figure 3.
FWD
Figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(r g )
E
E
E
E
E
E
E
E
25 °C
150 °C
25 °C
150 °C
With an inductive load at
With an inductive load at
:
T j
600
±15
16
V
:
600
±15
25
V
V
A
VCE
VGE
=
=
=
T j
VCE
VGE
I C
=
=
=
V
R gon
Ω
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(r g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
±15
16
°C
V
150
600
±15
25
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
16
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon)
t
t
t
t
t
t
t
t
600
V
25 °C
150 °C
600
±15
25
V
V
A
25 °C
150 °C
At
VCE
=
At
VCE
VGE
I C
=
:
:
Tj
±15
16
V
VGE
R gon
=
=
Tj
=
Ω
=
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon
)
Q
Q
Q
Q
Q
Q
Q
Q
600
±15
16
V
V
Ω
25 °C
150 °C
600
V
V
A
25 °C
150 °C
At
VCE
=
At
VCE=
:
:
VGE
R gon
=
T j
VGE
=
±15
25
T j
=
I C=
Figure 11.
FWD
Figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
600
600
±15
16
V
V
Ω
25 °C
150 °C
V
V
A
25 °C
150 °C
At
VCE
=
At
VCE
VGE
I C
=
:
:
VGE
=
=
T j
=
±15
25
T j
R gon
=
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
t
t
t
t
t
t
i
i
i
i
i
i
i
i
600
25 °C
150 °C
25 °C
150 °C
V
V
600
±15
25
V
V
A
At
VCE
=
At
VCE
VGE
I C
=
:
:
±15
16
VGE
=
=
T j
=
T j
R gon
Ω
=
Figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
175
°C
Ω
Tj
=
16
16
R gon =
R goff =
Ω
Copyright Vincotech
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datasheet
Inverter Switching Definitions
General conditions
=
=
=
150 °C
16 Ω
T j
Rgon
R goff
16 Ω
Figure 1.
IGBT
Figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VCE
VCE
IC
VGE
VGE
tEoff
tEon
-15
V
-15
15
V
VGE (0%) =
VGE (0%) =
15
V
V
VGE (100%) =
VC (100%) =
I C (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
600
25
V
600
25
V
A
A
0,264
0,675
μs
μs
0,067
0,370
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
Figure 3.
IGBT
Figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
VCE
IC
IC
VCE
tr
tf
600
25
V
600
25
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
0,138
μs
0,043
μs
tr
=
Copyright Vincotech
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datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eoff
Pon
Poff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
15,00
2,48
0,67
kW
mJ
μs
P on (100%) =
Eon (100%) =
15,00
3,15
0,37
kW
mJ
μs
t Eoff
=
tEon =
Figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
Id
Vd
fitted
600
25
V
Vd (100%) =
I d (100%) =
I RRM (100%) =
A
-17
0,524
A
μs
t rr
=
Copyright Vincotech
19
30 Aug. 2016 / Revision 1
10-FU127PA025SC-L159E06
datasheet
Inverter Switching Definitions
Figure 8.
FWD
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Qrr
Id
Erec
tErec
Prec
I d (100%) =
25
A
P rec (100%) =
Erec (100%) =
15,00
kW
4,50
1,00
μC
μs
1,78
1,00
mJ
μs
Q rr (100%) =
t Qrr
=
tErec =
Copyright Vincotech
20
30 Aug. 2016 / Revision 1
10-FU127PA025SC-L159E06
datasheet
Brake Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(rg)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
32
V
V
Ω
Ω
j
:
600
±15
25
V
V
A
VCE
VGE
=
=
=
=
T
VCE
VGE
I C
=
=
=
T j:
R gon
R goff
32
Figure 3.
FWD
Figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(r g )
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
:
T j
600
±15
32
V
V
Ω
:
600
±15
25
V
V
A
VCE
VGE
=
=
=
T j
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
21
30 Aug. 2016 / Revision 1
10-FU127PA025SC-L159E06
datasheet
Brake Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(r g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
±15
32
°C
V
150
600
±15
25
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
32
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
600
600
V
V
Ω
25 °C
125 °C
150 °C
V
V
A
25 °C
125 °C
150 °C
A
t
VCE
=
At
VCE =
:
:
Tj
±15
32
±15
25
VGE
R gon
=
=
Tj
VGE
I C
=
=
Copyright Vincotech
22
30 Aug. 2016 / Revision 1
10-FU127PA025SC-L159E06
datasheet
Brake Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
600
±15
32
V
V
Ω
25 °C
125 °C
150 °C
600
±15
25
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
:
T j
=
T j
=
=
=
Figure 11.
FWD
Figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
600
±15
32
V
V
Ω
25 °C
125 °C
150 °C
600
±15
25
V
V
A
25 °C
125 °C
150 °C
A
t
VCE
=
At
VCE =
:
:
T j
VGE
=
=
T j
VGE
I C
=
R gon
=
Copyright Vincotech
23
30 Aug. 2016 / Revision 1
10-FU127PA025SC-L159E06
datasheet
Brake Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
diF/dt
t
t
t
t
t
t
t
t
diF/dt
dir r/dt
i
i
i
i
dirr/dt
i
i
i
i
600
25 °C
125 °C
150 °C
V
V
Ω
600
±15
25
V
V
A
At
VCE
=
At
VCE
VGE
I C
=
:
±15
32
VGE
=
=
T j
=
R gon
=
Figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
175
°C
Ω
Tj
=
32
32
R gon =
R goff =
Ω
Copyright Vincotech
24
30 Aug. 2016 / Revision 1
10-FU127PA025SC-L159E06
datasheet
Brake Switching Definitions
General conditions
=
=
=
125 °C
32 Ω
T j
Rgon
R goff
32 Ω
Figure 1.
IGBT
Figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
IC
tdoff
VCE
VCE
VGE
IC
VGE
tEoff
tEon
-15
-15
V
V
VGE (0%) =
VGE (0%) =
15
V
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
600
25
V
600
25
V
A
A
0,289
0,687
μs
μs
0,123
0,415
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
Figure 3.
IGBT
Figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
VCE
IC
VCE
tr
tf
600
V
600
25
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
25
A
A
0,130
μs
0,046
μs
tr
=
Copyright Vincotech
25
30 Aug. 2016 / Revision 1
10-FU127PA025SC-L159E06
datasheet
Brake Switching Definitions
Figure 5.
IGBT
Figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Poff
Eoff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
14,94
kW
mJ
μs
P on (100%) =
Eon (100%) =
14,94
kW
mJ
μs
2,37
0,69
2,49
0,41
t Eoff
=
tEon =
Figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
Id
Vd
fitted
600
V
Vd (100%) =
I d (100%) =
I RRM (100%) =
25
A
-11
A
0,542
μs
t rr
=
Copyright Vincotech
26
30 Aug. 2016 / Revision 1
10-FU127PA025SC-L159E06
datasheet
Brake Switching Definitions
Figure 8.
FWD
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Erec
Id
Qrr
tErec
Prec
I d (100%) =
25
A
P rec (100%) =
Erec (100%) =
14,94
kW
mJ
μs
2,58
1,08
μC
μs
1,07
1,08
Q rr (100%) =
t Qrr
=
tErec =
Copyright Vincotech
27
30 Aug. 2016 / Revision 1
10-FU127PA025SC-L159E06
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste 12mm housing with solder pins
10-FU127PA025SC-L159E06
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
SSSS
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
Outline
Pin table [mm]
Pin
1
X
Y
22,5
22,5
19,5
22,5
19,5
22,5
19,5
22,5
11
Function
0
BRCE
BRCG
GI6
2
3
3
13,5
13,5
23,5
23,5
33,5
33,5
33,5
33,5
33,5
25
4
EI6
5
GI5
6
EI5
7
GI4
8
EI4
9
INV+
GI1
10
11
12
13
14
15
16
17
18
19
3
0
U
3
GI2
25
0
V
16,5
16,5
3
3
GI3
0
W
0
NTC1
NTC2
BRC+
INV+
0
0
7,9
0
9,3
11
Copyright Vincotech
28
30 Aug. 2016 / Revision 1
10-FU127PA025SC-L159E06
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
TI1,TI2,TI3
TI4,TI5,TI6
IGBT
1200 V
25 A
25 A
Inverter Switch
Inverter Diode
DI1,DI2,DI3
DI4,DI5,DI6
FWD
1200 V
TB
IGBT
FWD
1200 V
1200 V
1200 V
25 A
10 A
3 A
Brake Switch
Brake diode
DB2
DB1
NTC
FWD
Brake Sw. Protection Diode
Thermistor
Thermistor
Copyright Vincotech
29
30 Aug. 2016 / Revision 1
10-FU127PA025SC-L159E06
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data for flow 0 packages see vincotech.com website.
Package data
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FU127PA025SC-L159E06-D1-14
30 Aug. 2016
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
30
30 Aug. 2016 / Revision 1
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