10-FX074PA075SM-L625F07 [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-FX074PA075SM-L625F07 |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总16页 (文件大小：1179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FX074PA075SM-L625F07
datasheet
fast PACK 0 H C
650 V / 75 A
Features
flow 0 17 mm housing
● High speed H-Bridge
● High efficiency IGBT H5
● Full current fast FWD
● Integrated capacitors
● Thermistor
Schematic
Target applications
● Power Supply
● Solar Inverters
● UPS
● Welding & Cutting
Types
● 10-FX074PA075SM-L625F07
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
H-Bridge Switch
VCES
IC
Collector-emitter voltage
650
53
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
ICRM
Repetitive peak collector current
Turn off safe operating area
Total power dissipation
tp limited by Tjmax
Tj ≤ 175 °C, VCE ≤ 650 V
Tj = Tjmax
225
300
90
A
A
Ptot
VGES
Tjmax
Ts = 80 °C
W
V
Gate-emitter voltage
±20
175
Maximum junction temperature
°C
Copyright Vincotech
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05 Jun. 2018 / Revision 1
10-FX074PA075SM-L625F07
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
H-Bridge Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
55
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
150
71
A
W
°C
Tjmax
Maximum junction temperature
175
Capacitor (DC)
VMAX
Top
Maximum DC voltage
630
V
Operation Temperature
-55…+125
°C
Module Properties
Thermal Properties
Storage temperature
Tstg
Tjop
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
min. 12,7
> 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
H-Bridge Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,00075 25
25
3,3
4
4,7
V
V
1,67
1,84
1,88
2,22
VCEsat
Collector-emitter saturation voltage
15
75
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
120
none
4300
75
Cies
Coes
Cres
Output capacitance
f = 1 Mhz
0
25
25
pF
Reverse transfer capacitance
Thermal
16
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,06
K/W
25
49
49
49
Turn-on delay time
td(on)
125
150
25
10
Rise time
tr
125
150
25
12
13
67
Rgon = 2 Ω
Rgoff = 2 Ω
ns
Turn-off delay time
Fall time
td(off)
125
150
25
125
150
25
125
150
25
79
82
5
7
±15
350
75
tf
8
0,644
0,982
1,08
0,269
0,524
Qr
FWD
Qr
FWD
Qr
FWD
= 2,5 μC
= 4,5 μC
= 5,2 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
0,596
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10-FX074PA075SM-L625F07
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
H-Bridge Diode
Static
25
1,53
1,49
1,47
1,92
3,8
VF
IR
125
150
Forward voltage
75
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,34
K/W
25
90
111
117
IRRM
125
150
25
Peak recovery current
A
51
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
83
93
ns
di/dt = 7979 A/μs
di/dt = 6480 A/μs ±15
di/dt = 6720 A/μs
2,53
4,54
5,21
0,578
1,07
1,24
3574
2005
2114
350
75
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Capacitor (DC)
C
Capacitance
150
nF
%
%
Tolerance
-10
+10
2,5
Dissipation factor
f = 1 kHz
25
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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05 Jun. 2018 / Revision 1
10-FX074PA075SM-L625F07
datasheet
H-Bridge Switch Characteristics
Copyright Vincotech
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05 Jun. 2018 / Revision 1
10-FX074PA075SM-L625F07
datasheet
H-Bridge Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G)
I C = f(VCE)
I
I
I
V
V
V
I
V
D =
single pulse
80 ºC
I C =
75
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
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05 Jun. 2018 / Revision 1
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datasheet
H-Bridge Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,34
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,84E-02
1,57E-01
5,86E-01
3,27E-01
1,27E-01
8,12E-02
3,64E+00
5,25E-01
1,06E-01
2,57E-02
4,84E-03
4,11E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
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05 Jun. 2018 / Revision 1
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datasheet
Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
With an inductive load at
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
350
±15
2
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
75
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
350
±15
2
V
V
Ω
350
±15
75
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
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05 Jun. 2018 / Revision 1
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datasheet
Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
±15
2
°C
V
150
350
±15
75
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
25 °C
At
VCE
=
350
±15
2
V
V
Ω
At
VCE
=
350
V
V
A
25 °C
VGE
R gon
=
=
Tj:
VGE
I C
=
±15
75
Tj:
125 °C
150 °C
125 °C
150 °C
=
Copyright Vincotech
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05 Jun. 2018 / Revision 1
10-FX074PA075SM-L625F07
datasheet
Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
25 °C
350
±15
2
V
V
Ω
350
±15
75
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
25 °C
350
±15
2
V
V
Ω
350
±15
75
V
V
A
At
VCE
=
At
VCE =
25 °C
VGE
=
=
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
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05 Jun. 2018 / Revision 1
10-FX074PA075SM-L625F07
datasheet
Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
d
iF
/
/
dt
dt
di
rr/dt
t
t
t t
t t
t
t
dirr
i
i
i i
i i
i
i
At
VCE
=
350
±15
2
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
75
V
V
A
25 °C
:
Tj
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj
=
=
=
125
°C
Ω
2
2
R gon
R goff
Ω
Copyright Vincotech
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05 Jun. 2018 / Revision 1
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datasheet
Switching Definitions
General conditions
=
=
=
125 °C
2 Ω
2 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
75
V
350
75
V
A
A
79
ns
49
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
t f =
350
75
7
V
VC (100%) =
I C (100%) =
350
75
V
A
A
ns
tr
=
12
ns
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05 Jun. 2018 / Revision 1
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datasheet
Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
Qr
IF
IF
fitted
VF
350
75
V
75
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
4,54
μC
111
83
A
ns
t rr
=
Copyright Vincotech
13
05 Jun. 2018 / Revision 1
10-FX074PA075SM-L625F07
datasheet
Ordering Code & Marking
Version
without thermal paste 17 mm housing with solder pins
with thermal paste 17 mm housing with solder pins
Ordering Code
10-FX074PA075SM-L625F07
10-FX074PA075SM-L625F07-/3/
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
Function
G11
0
22,5
22,5
22,5
22,5
22,5
22,5
22,5
22,5
17,8
15,3
1
2
2,9
S11
DC-1
DC-1
DC+
DC+
S12
3
4
8,3
10,8
19,6
22,1
29,1
32
5
6
7
8
G12
9
33,5
33,5
Ph1
10
Ph1
11
12
13
33,5
33,5
32
7,2
4,7
0
Ph2
Ph2
G14
14
15
16
17
18
19
20
21
22
29,1
22,1
19,6
10,8
8,3
2,9
0
0
0
S14
DC+
0
DC+
0
DC-2
DC-2
S13
0
0
0
G13
0
8
Therm1
Therm2
0
14,5
Copyright Vincotech
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05 Jun. 2018 / Revision 1
10-FX074PA075SM-L625F07
datasheet
Pinout
Identification
ID
Component
IGBT
Voltage
650 V
Current
Function
Comment
T11, T12, T13, T14
D11, D12, D13, D14
75 A
75 A
H-Bridge Switch
H-Bridge Diode
Capacitor (DC)
Thermistor
FWD
650 V
C10, C20
Rt
Capacitor
NTC
630 V
Copyright Vincotech
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05 Jun. 2018 / Revision 1
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datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FX074PA075SM-L625F07-D1-14
05 Jun. 2018
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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05 Jun. 2018 / Revision 1
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