10-FX062TA099FS-P980D57 [VINCOTECH]
Easy to use / drive;Extremly low losses;Very high commutation ruggedness;
| 型号： | 10-FX062TA099FS-P980D57 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy to use / drive;Extremly low losses;Very high commutation ruggedness |
| 文件： | 总22页 (文件大小：7654K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FX062TA099FS-P980D57
datasheet
flowPFC 0
600 V / 99 mΩ
Features
flow 0 17 mm housing
● Compact and low inductance design
● Suitable for Interleaved topology
● Suitable for current sensing in source
● C6 series CoolMos™ and SiC boost diode
Schematic
Target applications
● Power Supply
● Welding & Cutting
Types
● 10-FX062TA099FS-P980D57
Copyright Vincotech
1
12 Sep. 2021 / Revision 2
10-FX062TA099FS-P980D57
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Switch
VDSS
Drain-source voltage
600
19
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
112
88
A
Ptot
Total power dissipation
Gate-source voltage
W
V
VGSS
±20
150
Tjmax
Maximum Junction Temperature
°C
PFC Diode
VRRM
Peak repetitive reverse voltage
600
15
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
46
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
90
A
Tj = Tjmax
35
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Thyristor
VRRM
ITRMSM
ITSM
Repetitive peak reverse voltage
1200
26
V
A
Maximum RMS on-state current
Surge on-state current
I2t value
Tj = Tjmax
Ts = 80 °C
Tj = 125 °C
Tj = 125 °C
Ts = 80 °C
Single Half Sine Wave,
tp = 10 ms
320
510
60
A
Single Half Sine Wave,
tp = 8,3 ms
I2t
A2s
W
°C
Ptot(AV)
Tjmax
Mean total power loss
Maximum Junction Temperature
Tj = Tjmax
150
Copyright Vincotech
2
12 Sep. 2021 / Revision 2
10-FX062TA099FS-P980D57
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
47
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
280
390
59
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
PFC Shunt
I
DC current
Tc = 70 °C
Tc = 70 °C
26
7
A
Ptot
Power dissipation
W
Capacitor (DC)
VMAX
Maximum DC voltage
500
V
Top
Operation Temperature
-55 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
4000
2500
V
tp = 1 min
V
>12,7
>12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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12 Sep. 2021 / Revision 2
10-FX062TA099FS-P980D57
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Switch
Static
25
99
99(1)
rDS(on)
VGS(th)
IGSS
IDSS
rg
Drain-source on-state resistance
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
10
0
18,1
mΩ
V
125
199
0,00121 25
2,4
3
3,6
100
5
20
0
0
25
25
nA
µA
Ω
600
1,6
119
2660
154
0,9
Qg
VDD = 480 V
f = 1 Mhz
0/10
18,1
0
25
25
25
nC
Ciss
Short-circuit input capacitance
Short-circuit output capacitance
Diode forward voltage
0
0
100
pF
V
Coss
VSD
18,1
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,8
K/W
25
19,8
19,4
3,6
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
125
25
3,8
Rgon = 2 Ω
Rgoff = 2 Ω
90,2
92,4
3,07
3,58
0,053
0,063
0,015
0,023
td(off)
Turn-off delay time
Fall time
ns
125
25
0/10
400
18
tf
ns
125
25
QrFWD=0,06 µC
QrFWD=0,051 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Diode
Static
25
1,49
1,69
1,78
10
1,8(1)
VF
IR
Forward voltage
10
125
150
25
V
50
Reverse leakage current
Thermal
Vr = 600 V
µA
150
20
200
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,75
K/W
25
18,12
15,58
6,94
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
μC
125
25
7,44
0,06
di/dt=5949 A/µs
di/dt=4798 A/µs
Qr
0/10
400
18
125
0,051
2,7x10
-3
25
Erec
Reverse recovered energy
mWs
A/µs
1,535x10-3
125
25
8682
5922
(dirf/dt)max
Peak rate of fall of recovery current
125
Copyright Vincotech
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12 Sep. 2021 / Revision 2
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Thyristor
Static
25
1,39
1,41
1,33
1,32
VT
VT(TO)
rT
On-state voltage
44
V
V
125
On-state threshold voltage
On-state slope resistance
Direct reverse current
Holding current
44
44
125
125
0,9
9
mΩ
µA
mA
25
10
2
IRD
Vr = 1200 V
tp = 10 μs IG
125
IH
6
25
25
50
90
=
IL
Latching current
0,2 A diG/dt =
mA
A/μs
VGT
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Thermal
6
25
1,3
28
0,2
1
V
IGT
6
25
11
mA
V
VGD
2/3 VDRM
125
25
IGD
mA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,16
K/W
Rectifier Diode
Static
25
1,24
1,24
1,3(1)
1,33(1)
20
VF
IR
Forward voltage
50
V
125
25
Reverse leakage current
Vr = 1600 V
µA
150
1500
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,2
K/W
Copyright Vincotech
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12 Sep. 2021 / Revision 2
10-FX062TA099FS-P980D57
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
PFC Shunt
Static
R
Resistance
10
50
mΩ
%
Tolerance
-1
1
Temperature coeficient
tc
ppm/K
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
270
nF
%
Tolerance
-20
20
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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12 Sep. 2021 / Revision 2
10-FX062TA099FS-P980D57
datasheet
PFC Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
40
40
VGS
:
-4 V
-2 V
0 V
30
20
2 V
30
20
10
0
4 V
6 V
8 V
10
10 V
12 V
14 V
16 V
18 V
20 V
0
-10
-20
-30
-40
0,0
2,5
5,0
7,5
10,0
12,5
-5,0
-2,5
0,0
2,5
5,0
7,5
10,0
12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
10
μs
V
250
125
μs
°C
25 °C
Tj:
VGS
Tj =
125 °C
VGS from -4 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
17,5
10
15,0
12,5
10,0
7,5
-1
10
-2
10
0,5
5,0
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
2,5
-4
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
1
2
3
4
5
6
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
0,795
25 °C
Tj:
VDS
125 °C
Rth(j-s) =
K/W
MOSFET thermal model values
R (K/W)
τ (s)
6,19E-02
1,10E-01
4,12E-01
1,04E-01
5,73E-02
4,98E-02
2,26E+00
4,08E-01
9,23E-02
2,31E-02
5,67E-03
8,49E-04
Copyright Vincotech
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12 Sep. 2021 / Revision 2
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datasheet
PFC Switch Characteristics
figure 5.
MOSFET
figure 6.
MOSFET
Safe operating area
Gate voltage vs gate charge
ID = f(VDS
)
VGS = f(Qg)
1000
12
10
8
100
10
6
1
4
0,1
0,01
2
0
1
10
100
1000
10000
0
25
50
75
100
125
V
DS(V)
Qg(μC)
D =
ID
=
single pulse
18.1
25
A
Ts =
Tj =
80
10
°C
V
°C
VGS
=
Tj =
Tjmax
Copyright Vincotech
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12 Sep. 2021 / Revision 2
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datasheet
PFC Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,746
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,62E-02
2,31E-01
1,19E+00
6,92E-01
4,41E-01
1,19E-01
8,00E+00
4,59E-01
6,16E-02
1,36E-02
3,29E-03
6,68E-04
Copyright Vincotech
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datasheet
Rectifier Thyristor Characteristics
figure 9.
Thyristor
figure 10.
Thyristor
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
50
40
30
20
10
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,165
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Thyristor thermal model values
R (K/W)
τ (s)
1,32E-01
4,51E-01
4,32E-01
1,06E-01
4,49E-02
9,48E-01
1,25E-01
4,22E-02
5,61E-03
1,42E-03
Copyright Vincotech
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datasheet
Rectifier Diode Characteristics
figure 11.
Rectifier
figure 12.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
150
125
100
75
10
0
10
-1
10
-2
10
50
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
25
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
10
10
10
10
VF(V)
tp(s)
tp
=
250
μs
D =
tp / T
1,195
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
4,87E-02
1,57E-01
7,33E-01
1,69E-01
7,37E-02
1,39E-02
6,80E+00
6,29E-01
9,05E-02
3,10E-02
4,76E-03
1,53E-02
Copyright Vincotech
12
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datasheet
Thermistor Characteristics
figure 13.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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datasheet
PFC Switching Characteristics
figure 14.
MOSFET
figure 15.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
0,125
0,100
0,075
0,050
0,025
0,000
0,10
0,08
0,06
0,04
0,02
0,00
Eon
Eon
Eon
Eoff
Eon
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
35
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
400
0/10
2
V
V
Ω
Ω
125 °C
400
0/10
18
V
V
A
125 °C
Rgon
Rgoff
2
figure 16.
FWD
figure 17.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,012
0,010
0,008
0,006
0,004
0,002
0,000
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
35
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
400
0/10
2
V
V
Ω
125 °C
400
0/10
18
V
V
A
125 °C
Rgon
Copyright Vincotech
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datasheet
PFC Switching Characteristics
figure 18.
MOSFET
figure 19.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
td(on)
td(on)
-2
10
-2
tf
10
tr
tf
tr
-3
10
-3
10
0
5
10
15
20
25
30
35
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
400
0/10
2
°C
125
400
0/10
18
°C
V
VDS
=
=
=
=
VDS
=
=
=
V
V
Ω
Ω
VGS
Rgon
Rgoff
VGS
ID
V
A
2
figure 20.
FWD
figure 21.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn off gate resistor
trr = f(ID)
trr = f(Rgoff)
0,009
0,008
0,007
0,006
0,005
0,004
0,003
0,002
0,001
0,000
0,012
0,010
0,008
0,006
0,004
0,002
0,000
trr
trr
trr
trr
0
5
10
15
20
25
30
35
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgoff(Ω)
VDS
=
=
=
VDS
=
=
=
At
400
0/10
2
V
V
Ω
At
400
0/10
18
V
25 °C
25 °C
Tj:
Tj:
VGS
VGS
ID
125 °C
V
A
125 °C
Rgon
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datasheet
PFC Switching Characteristics
figure 22.
FWD
figure 23.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn off gate resistor
Qr = f(ID)
Qr = f(Rgoff)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0,09
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
35
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
0/10
2
V
V
At
400
V
V
A
25 °C
25 °C
Tj:
Tj:
125 °C
0/10
18
125 °C
Rgon
Ω
figure 24.
FWD
figure 25.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(ID)
IRM = f(Rgoff)
22,5
20,0
17,5
15,0
12,5
10,0
7,5
25
20
15
10
5
IRM
IRM
IRM
IRM
5,0
2,5
0,0
0
0
5
10
15
20
25
30
35
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
0/10
2
V
V
At
400
V
V
A
25 °C
25 °C
Tj:
Tj:
125 °C
0/10
18
125 °C
Rgon
Ω
Copyright Vincotech
16
12 Sep. 2021 / Revision 2
10-FX062TA099FS-P980D57
datasheet
PFC Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgoff)
12000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
5
10
15
20
25
30
35
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
V
V
Ω
At
400
0/10
18
V
25 °C
25 °C
Tj:
Tj:
0/10
2
125 °C
V
A
125 °C
Rgon
figure 28.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
40
ID MAX
35
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V
DS(V)
Tj =
At
125
2
°C
Ω
Rgon
Rgoff
=
=
2
Ω
Copyright Vincotech
17
12 Sep. 2021 / Revision 2
10-FX062TA099FS-P980D57
datasheet
PFC Switching Definitions
figure 29.
MOSFET
figure 30.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 31.
MOSFET
figure 32.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
18
12 Sep. 2021 / Revision 2
10-FX062TA099FS-P980D57
datasheet
PFC Switching Definitions
figure 33.
FWD
figure 34.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 35.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
19
12 Sep. 2021 / Revision 2
10-FX062TA099FS-P980D57
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FX062TA099FS-P980D57
10-FX062TA099FS-P980D57-/7/
10-FX062TA099FS-P980D57-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
Rt1
Rt2
Sa
33,5
33,5
29,5
29,5
26,7
23,9
21,05
14,85
2
2,8
2,8
0
3
4
Sb
5
0
-DC
-DC
G1
6
0
7
0
8
0
S1
9
not assembled
0 G2
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
12,05
9,5
12,05
0
-PFC1
G3
8,2
6,7
12,05
0
-PFC2
S2
3,9
not assembled
1,1
0
0
G4
22,7
PFC2
7,1
22,7
20,2
22,7
22,7
22,7
22,7
22,7
18,55
16,05
8,7
+PFC
+PFC
PFC1
GT2
+DC
+DC
GT1
L1
7,1
14,2
20,7
23,5
26
28,8
33,5
33,5
33,5
31
L1
L2
8,7
L2
Copyright Vincotech
20
12 Sep. 2021 / Revision 2
10-FX062TA099FS-P980D57
datasheet
Pinout
PFC+
18,19
+DC
22,23
GT1
TH1
GT2
TH2
24
21
D1
D2
PFC1
PFC2
17
20
L1
L2
25,26
27,28
C1
C2
T1
T2
G2
S1
G4
S2
10
8
16
14
13
G1
G3
D6
D5
7
12
R1
-DC
-PFC1
11
-PFC2
5,6
3
4
Sa
Sb
Rt
1
2
Rt1
Rt2
Identification
Component
Voltage
Current
Function
Comment
ID
T1, T2
D1, D2
TH1, TH2
D6, D5
R1
MOSFET
FWD
600 V
600 V
90 mΩ
10 A
PFC Switch
PFC Diode
Thyristor
Rectifier
Shunt
1200 V
1600 V
26 A
Rectifier Thyristor
Rectifier Diode
PFC Shunt
50 A
C1, C2
Rt
Capacitor
NTC
500 V
Capacitor (DC)
Thermistor
Copyright Vincotech
21
12 Sep. 2021 / Revision 2
10-FX062TA099FS-P980D57
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format, module is unchanged
Correct R/tau values of Rectifier Thyristor and Rectifier
Diode thermal characteristics
10-FX062TA099FS-P980D57-D2-14
12 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
22
12 Sep. 2021 / Revision 2
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