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10-FY07BVA050S5-LF44E18 [VINCOTECH]

High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
10-FY07BVA050S5-LF44E18
型号： 10-FY07BVA050S5-LF44E18
厂家： VINCOTECH    VINCOTECH
描述：

High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
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10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Low Buck / High Buck Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
650  
50  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
150  
73  
A
W
V
±20  
175  
Maximum junction temperature  
°C  
Copyright Vincotech  
1
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Buck Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
650  
33  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
tp limited by Tjmax  
Tj = Tjmax  
60  
A
50  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Boost Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
650  
50  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
150  
73  
A
W
V
±20  
175  
Maximum junction temperature  
°C  
Low Boost Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
650  
33  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
tp limited by Tjmax  
Tj = Tjmax  
60  
A
50  
W
°C  
Tjmax  
Maximum junction temperature  
175  
High Boost Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
650  
33  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
tp limited by Tjmax  
Tj = Tjmax  
60  
A
50  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
2
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Input Boost Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
650  
50  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
150  
73  
A
W
V
±20  
175  
Maximum junction temperature  
°C  
Input Boost Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
650  
47  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
tp limited by Tjmax  
Tj = Tjmax  
100  
63  
A
W
°C  
Tjmax  
Maximum junction temperature  
175  
ByPass Diode  
VRRM  
IF  
IFSM  
I2t  
Ptot  
Tjmax  
Peak repetitive reverse voltage  
1600  
88  
V
A
Continuous (direct) forward current  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
600  
1800  
105  
150  
A
50 Hz Single Half Sine Wave  
tp = 10 ms  
A2s  
W
°C  
Total power dissipation  
Tj = Tjmax  
Maximum junction temperature  
Input Boost Sw. Protection Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
650  
14  
V
A
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
tp limited by Tjmax  
Tj = Tjmax  
20  
A
33  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
3
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Capacitor (DC)  
VMAX  
Top  
Maximum DC voltage  
630  
V
Operation Temperature  
-55…+125  
°C  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
tp = 2 s  
6000  
2500  
V
Visol  
Isolation voltage  
AC Voltage  
tp = 1 min  
V
Creepage distance  
Clearance  
min. 12,7  
8,16 / 7,93  
> 200  
mm  
mm  
Solder pins / Press-fit pins  
Comparative Tracking Index  
*100 % tested in production  
CTI  
Copyright Vincotech  
4
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
Vr [V] IF [A]  
Min  
Max  
Low Buck / High Buck Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0005 25  
25  
3,2  
4
4,8  
V
V
1,35  
1,41  
1,43  
1,75  
VCEsat  
Collector-emitter saturation voltage  
15  
50  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
50  
µA  
nA  
Ω
20  
100  
none  
3100  
12  
Cies  
Cres  
Qg  
f = 1 Mhz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
15  
650  
50  
120  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,29  
K/W  
Dynamic  
25  
64  
65  
66  
Turn-on delay time  
td(on)  
125  
150  
25  
8
Rise time  
tr  
125  
150  
25  
10  
10  
81  
Rgon = 8 Ω  
Rgoff = 8 Ω  
ns  
Turn-off delay time  
Fall time  
td(off)  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
95  
99  
12  
20  
±15  
350  
50  
tf  
23  
0,689  
0,887  
0,874  
0,456  
0,732  
0,764  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 2,2 μC  
= 3,4 μC  
= 3,9 μC  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
Eon  
mWs  
Eoff  
Copyright Vincotech  
5
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
Vr [V] IF [A]  
Min  
Max  
Buck Diode  
Static  
25  
125  
150  
1,52  
1,46  
1,44  
1,92  
1,6  
Forward voltage  
VF  
IR  
30  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,92  
K/W  
Dynamic  
25  
70  
77  
78  
IRRM  
Peak recovery current  
125  
150  
25  
A
59  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
100  
111  
ns  
di/dt = 6812 A/μs  
di/dt = 5829 A/μs ±15  
di/dt = 5655 A/μs  
2,25  
3,43  
3,88  
0,608  
0,922  
1,04  
5343  
4706  
4865  
350  
50  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
Copyright Vincotech  
6
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
Vr [V] IF [A]  
Min  
Max  
Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0005 25  
25  
3,2  
4
4,8  
V
V
1,35  
1,41  
1,43  
1,75  
VCEsat  
Collector-emitter saturation voltage  
15  
50  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
50  
µA  
nA  
Ω
20  
100  
none  
3100  
12  
Cies  
Cres  
Qg  
f = 1 Mhz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
15  
650  
50  
120  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic (T21-D12)  
Turn-on delay time  
1,29  
K/W  
25  
65  
65  
66  
td(on)  
125  
150  
25  
11  
Rise time  
tr  
125  
150  
25  
12  
11  
80  
Rgon = 8 Ω  
Rgoff = 8 Ω  
ns  
Turn-off delay time  
Fall time  
td(off)  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
96  
101  
11  
20  
24  
0,429  
0,578  
0,650  
0,450  
0,714  
0,787  
±15  
350  
50  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 1,5 μC  
= 2,5 μC  
= 2,9 μC  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
Eon  
mWs  
Eoff  
Copyright Vincotech  
7
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
Vr [V] IF [A]  
Min  
Max  
Low Boost Diode  
Static  
25  
125  
150  
1,52  
1,46  
1,44  
1,92  
1,6  
Forward voltage  
VF  
IR  
30  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,92  
K/W  
Dynamic (T21-D12)  
25  
48  
57  
60  
IRRM  
125  
150  
25  
Peak recovery current  
A
63  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
102  
113  
ns  
di/dt = 5070 A/μs  
di/dt = 3762 A/μs  
di/dt = 3712 A/μs  
1,47  
2,52  
2,87  
0,423  
0,686  
0,779  
2718  
739  
Recovered charge  
±15  
350  
50  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
888  
Copyright Vincotech  
8
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
Vr [V] IF [A]  
Min  
Max  
Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0005 25  
25  
3,2  
4
4,8  
V
V
1,35  
1,41  
1,43  
1,75  
VCEsat  
Collector-emitter saturation voltage  
15  
50  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
50  
µA  
nA  
Ω
20  
100  
none  
3100  
12  
Cies  
Cres  
Qg  
f = 1 Mhz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
15  
650  
50  
120  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,29  
K/W  
Dynamic (T21-D20)  
25  
61  
66  
66  
Turn-on delay time  
td(on)  
125  
150  
25  
9
Rise time  
tr  
125  
150  
25  
11  
11  
79  
Rgon = 8 Ω  
Rgoff = 8 Ω  
ns  
Turn-off delay time  
Fall time  
td(off)  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
96  
100  
9
19  
23  
0,493  
0,568  
0,556  
0,362  
0,688  
0,784  
±15  
350  
50  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 1,4 μC  
= 2,5 μC  
= 2,9 μC  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
Eon  
mWs  
Eoff  
Copyright Vincotech  
9
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
Vr [V] IF [A]  
Min  
Max  
High Boost Diode  
Static  
25  
125  
150  
1,52  
1,46  
1,44  
1,92  
1,6  
Forward voltage  
VF  
IR  
30  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,92  
K/W  
Dynamic (T21-D20)  
25  
52  
59  
63  
IRRM  
125  
150  
25  
Peak recovery current  
A
60  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
105  
115  
ns  
di/dt = 4573 A/μs  
di/dt = 4041 A/μs  
di/dt = 4075 A/μs  
1,444  
2,475  
2,932  
0,362  
0,682  
0,811  
3629  
771  
Recovered charge  
±15  
350  
50  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
814  
Copyright Vincotech  
10  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
Vr [V] IF [A]  
Min  
Max  
Input Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0005 25  
25  
3,2  
4
4,8  
V
V
1,35  
1,41  
1,43  
1,75  
VCEsat  
Collector-emitter saturation voltage  
15  
50  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
50  
µA  
nA  
Ω
20  
100  
none  
3100  
12  
Cies  
Cres  
Qg  
f = 1 Mhz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
15  
650  
50  
120  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,29  
K/W  
25  
26  
25  
25  
Turn-on delay time  
td(on)  
125  
150  
25  
9
Rise time  
tr  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
10  
11  
137  
156  
160  
12  
Rgon = 8 Ω  
Rgoff = 8 Ω  
ns  
Turn-off delay time  
Fall time  
td(off)  
0 / 15  
400  
50  
tf  
17  
21  
1,07  
1,48  
1,37  
0,513  
0,813  
0,902  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 1,6 μC  
= 3,2 μC  
= 3,6 μC  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
Eon  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
11  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
Vr [V] IF [A]  
Min  
Max  
Input Boost Diode  
Static  
25  
125  
150  
1,50  
1,44  
1,42  
1,92  
2,65  
Forward voltage  
VF  
IR  
50  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,50  
K/W  
Dynamic  
25  
47  
63  
66  
IRRM  
125  
150  
25  
Peak recovery current  
A
58  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
91  
98  
ns  
di/dt = 6127 A/μs  
di/dt = 5448 A/μs  
di/dt = 5124 A/μs  
1,61  
3,20  
3,61  
0,424  
0,884  
0,993  
564  
642  
635  
Recovered charge  
0 / 15  
400  
50  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
ByPass Diode  
Static  
25  
125  
150  
1,14  
1,09  
1,08  
Forward voltage  
VF  
IR  
65  
V
Reverse leakage current  
1600  
25  
50  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
0,67  
K/W  
Copyright Vincotech  
12  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
Vr [V] IF [A]  
Min  
Max  
Input Boost Sw. Protection Diode  
Static  
25  
125  
1,67  
1,56  
1,87  
0,14  
VF  
IR  
Forward voltage  
Reverse leakage current  
Thermal  
10  
V
650  
25  
µA  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
2,87  
100  
K/W  
Capacitor (DC)  
Capacitance  
C
nF  
%
%
Tolerance  
-10  
+10  
2,5  
Dissipation factor  
Thermistor  
Rated resistance  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
22  
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 1484 Ω  
-5  
5
5
mW  
mW/K  
K
1,5  
B(25/50) Tol. ±1 %  
B(25/100) Tol. ±1 %  
3962  
4000  
B-value  
K
Vincotech NTC Reference  
I
Copyright Vincotech  
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10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Low Buck / High Buck Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
Tj  
=
=
250  
150  
μs  
°C  
VGE  
=
Tj:  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
IC = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
Tj:  
=
1,29  
K/W  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
2,09E-01  
6,00E-01  
3,10E-01  
1,08E-01  
6,63E-02  
5,36E-01  
8,05E-02  
1,69E-02  
4,25E-03  
5,30E-04  
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10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Low Buck / High Buck Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Gate voltage vs gate charge  
Safe operating area  
VGE = f(Q G  
)
I C = f(VCE)  
I
V
D =  
single pulse  
IC  
=
50  
A
Ts  
=
80  
ºC  
VGE  
=
±15  
Tjmax  
V
Tj =  
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10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Buck Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
= f(  
)
= f( )  
tp  
I F  
VF  
Z th(j-s)  
101  
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
=
250  
μs  
25 °C  
125 °C  
150 °C  
=
/
tp  
D
tp  
T
:
Tj  
1,92  
K/W  
R th(j-s)  
FWD thermal model values  
(K/W)  
R
τ
(s)  
9,41E-02  
3,44E-01  
8,56E-01  
3,61E-01  
1,37E-01  
1,27E-01  
2,25E+00  
2,12E-01  
5,84E-02  
9,83E-03  
2,89E-03  
4,79E-04  
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10-FY07BVA050S5-LF44E18  
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datasheet  
Boost Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
Tj  
=
=
250  
150  
μs  
°C  
VGE  
=
Tj:  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
IC = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
Tj:  
=
1,29  
K/W  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
2,09E-01  
6,00E-01  
3,10E-01  
1,08E-01  
6,63E-02  
5,36E-01  
8,05E-02  
1,69E-02  
4,25E-03  
5,30E-04  
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10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Boost Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Gate voltage vs gate charge  
Safe operating area  
VGE = f(Q G  
)
I C = f(VCE)  
I
V
D =  
single pulse  
IC  
=
50  
A
Ts  
=
80  
ºC  
VGE  
=
±15  
Tjmax  
V
Tj =  
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datasheet  
Low / High Boost Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
= f(  
)
= f( )  
tp  
I F  
VF  
Z th(j-s)  
101  
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
=
250  
μs  
25 °C  
125 °C  
150 °C  
=
/
tp  
D
tp  
T
:
Tj  
1,92  
K/W  
R th(j-s)  
FWD thermal model values  
(K/W)  
R
τ
(s)  
9,41E-02  
3,44E-01  
8,56E-01  
3,61E-01  
1,37E-01  
1,27E-01  
2,25E+00  
2,12E-01  
5,84E-02  
9,83E-03  
2,89E-03  
4,79E-04  
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13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Input Boost Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
Tj  
=
=
250  
150  
μs  
°C  
VGE  
=
Tj:  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
IC = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
Tj:  
=
1,29  
K/W  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
2,09E-01  
6,00E-01  
3,10E-01  
1,08E-01  
6,63E-02  
5,36E-01  
8,05E-02  
1,69E-02  
4,25E-03  
5,30E-04  
Copyright Vincotech  
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13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Input Boost Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Gate voltage vs gate charge  
Safe operating area  
VGE = f(Q G  
)
I C = f(VCE)  
I
V
D =  
single pulse  
IC  
=
50  
A
Ts  
=
80  
ºC  
VGE  
=
±15  
Tjmax  
V
Tj =  
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10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Input Boost Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
tp / T  
1,50  
Tj:  
R th(j-s)  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
1,03E-01  
2,05E-01  
6,39E-01  
3,39E-01  
1,71E-01  
4,45E-02  
4,73E+00  
5,53E-01  
8,31E-02  
2,02E-02  
4,42E-03  
1,30E-03  
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10-FY07BVA050S5-LF44E18  
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datasheet  
ByPass Diode Characteristics  
figure 1.  
Bypass diode  
figure 2.  
Bypass diode  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
100  
200  
Z
150  
100  
50  
10-1  
0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10-2  
0
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp (s)  
0
0,5  
1
1,5  
2
VF (V)  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
tp / T  
0,67  
Tj:  
R th(j-s)  
K/W  
Diode thermal model values  
R (K/W)  
τ
(s)  
4,15E-02  
7,27E-02  
1,99E-01  
2,89E-01  
4,54E-02  
2,21E-02  
9,04E+00  
1,12E+00  
1,91E-01  
6,88E-02  
7,76E-03  
1,16E-03  
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10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Input Boost Sw. Protection Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
D =  
tp / T  
2,87  
Tj:  
R th(j-s)  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
6,53E-02  
1,48E-01  
1,31E+00  
7,32E-01  
4,04E-01  
2,11E-01  
3,94E+00  
4,48E-01  
5,96E-02  
1,36E-02  
2,79E-03  
5,37E-04  
Thermistor Characteristics  
Typical Thermistor resistance values  
figure 1.  
Thermistor  
Typical NTC characteristic as a function of temperature  
as a function of temperature  
R = f(T)  
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10-FY07BVA050S5-LF44E18  
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datasheet  
Low Buck / High Buck Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
E
E
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
=
350  
±15  
8
V
V
Ω
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
350  
±15  
50  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
R goff  
8
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
E
E
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
350  
±15  
8
V
V
Ω
350  
±15  
50  
V
V
A
VCE  
VGE  
=
=
=
Tj:  
VCE  
VGE  
I C  
=
=
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
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datasheet  
Low Buck / High Buck Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C)  
t = f(R g)  
t
t
With an inductive load at  
With an inductive load at  
150  
350  
±15  
8
°C  
V
150  
350  
±15  
50  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
VGE  
R gon  
R goff  
VGE  
I C  
Ω
Ω
A
8
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
350  
At  
VCE  
=
V
V
Ω
At  
VCE  
=
350  
V
V
A
25 °C  
25 °C  
±15  
8
±15  
50  
VGE  
R gon  
=
=
Tj:  
VGE  
I C  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
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13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Low Buck / High Buck Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
350  
±15  
8
V
V
Ω
350  
±15  
50  
V
V
A
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
25 °C  
25 °C  
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon)  
I
I
350  
±15  
8
V
V
Ω
350  
±15  
50  
V
V
A
At  
VCE  
=
At  
VCE  
VGE  
I C  
=
25 °C  
25 °C  
VGE  
=
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
=
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10-FY07BVA050S5-LF44E18  
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datasheet  
Low Buck / High Buck Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon)  
diF/  
dt  
diF/dt  
t
i
t
dirr  
/
dt  
dirr/dt  
i
350  
At  
VCE  
=
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
350  
±15  
50  
V
25 °C  
125 °C  
150 °C  
±15  
8
:
Tj  
V
A
:
VGE  
=
=
Tj  
R gon  
=
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
IC MAX  
I
I
I
V
At  
Tj =  
175  
°C  
Ω
8
8
R gon  
R goff  
=
=
Ω
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datasheet  
Low Buck / High Buck Switching Definitions  
General conditions  
=
=
=
125 °C  
8 Ω  
8 Ω  
T j  
Rgon  
R goff  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
VGE  
IC  
VGE  
VCE  
tEoff  
VCE  
tEon  
VGE (0%) =  
-15  
V
VGE (0%) =  
-15  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
V
350  
50  
V
350  
50  
V
A
A
95  
ns  
65  
ns  
t doff  
=
tdon  
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
350  
50  
V
350  
50  
V
VC (100%) =  
I C (100%) =  
t f =  
VC (100%) =  
I C (100%) =  
A
A
20  
ns  
tr  
=
10  
ns  
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datasheet  
Low Buck / High Buck Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
fitted  
IF  
VF  
350  
50  
V
50  
A
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
I F (100%) =  
Q r (100%) =  
A
3,43  
μC  
77  
A
t rr  
=
100  
ns  
Low Buck / High Buck Measurement circuits  
figure 1.  
Vd  
125uH  
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30  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Low Boost Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
E
E
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
=
350  
±15  
8
V
V
Ω
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
350  
±15  
50  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
R goff  
8
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
E
E
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
350  
±15  
8
V
V
Ω
350  
±15  
50  
V
V
A
VCE  
VGE  
=
=
=
Tj:  
VCE  
VGE  
I C  
=
=
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
Copyright Vincotech  
31  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Low Boost Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C)  
t = f(R g)  
t
t
With an inductive load at  
With an inductive load at  
150  
350  
±15  
8
°C  
V
150  
350  
±15  
50  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
V
Ω
Ω
A
8
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
350  
At  
VCE  
=
V
V
Ω
At  
VCE  
=
350  
V
V
A
25 °C  
25 °C  
VGE  
R gon  
=
=
±15  
8
Tj:  
VGE  
I C  
=
±15  
50  
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
Copyright Vincotech  
32  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Low Boost Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
350  
±15  
8
V
V
Ω
350  
±15  
50  
V
V
A
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
25 °C  
25 °C  
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon)  
I
I
350  
±15  
8
V
V
Ω
350  
±15  
50  
V
V
A
At  
VCE  
=
At  
VCE  
VGE  
I C  
=
25 °C  
25 °C  
VGE  
=
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
=
Copyright Vincotech  
33  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Low Boost Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon)  
diF/  
dt  
diF/dt  
t
i
t
i
dirr/dt  
dirr  
/
dt  
350  
At  
VCE  
=
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
350  
±15  
50  
V
25 °C  
125 °C  
150 °C  
±15  
8
:
Tj  
V
A
:
VGE  
=
=
=
Tj  
R gon  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
IC MAX  
I
I
I
V
At  
Tj =  
175  
°C  
Ω
8
8
R gon  
R goff  
=
=
Ω
Copyright Vincotech  
34  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Low Boost Switching Definitions  
General conditions  
=
=
=
125 °C  
8 Ω  
8 Ω  
T j  
Rgon  
R goff  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
VGE  
VGE  
IC  
VCE  
tEoff  
VCE  
tEon  
VGE (0%) =  
-15  
V
VGE (0%) =  
-15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
350  
50  
V
350  
50  
V
A
A
96  
ns  
65  
ns  
t doff  
=
tdon  
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
350  
50  
V
350  
50  
V
VC (100%) =  
I C (100%) =  
t f =  
VC (100%) =  
I C (100%) =  
A
A
20  
ns  
tr  
=
12  
ns  
Copyright Vincotech  
35  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Low Boost Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
fitted  
IF  
VF  
350  
50  
V
50  
A
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
I F (100%) =  
Q r (100%) =  
A
2,52  
μC  
57  
A
t rr  
=
102  
ns  
Low Boost Measurement circuits  
figure 1.  
Copyright Vincotech  
36  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
High Boost Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
E
E
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
=
350  
±15  
8
V
V
Ω
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
350  
±15  
50  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
R goff  
8
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
E
E
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
350  
±15  
8
V
V
Ω
350  
±15  
50  
V
V
A
VCE  
VGE  
=
=
=
Tj:  
VCE  
VGE  
I C  
=
=
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
Copyright Vincotech  
37  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
High Boost Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C)  
t = f(R g)  
t
t
With an inductive load at  
With an inductive load at  
150  
350  
±15  
8
°C  
V
150  
350  
±15  
50  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
VGE  
R gon  
R goff  
VGE  
I C  
Ω
Ω
A
8
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
350  
At  
VCE  
=
V
V
Ω
At  
VCE  
=
350  
V
V
A
25 °C  
25 °C  
±15  
8
±15  
50  
VGE  
R gon  
=
=
Tj:  
VGE  
I C  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
Copyright Vincotech  
38  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
High Boost Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
350  
±15  
8
V
V
Ω
350  
±15  
50  
V
V
A
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
25 °C  
25 °C  
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon)  
I
I
350  
±15  
8
V
V
Ω
350  
±15  
50  
V
V
A
At  
VCE  
=
At  
VCE  
VGE  
I C  
=
25 °C  
25 °C  
VGE  
=
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
=
Copyright Vincotech  
39  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
High Boost Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon)  
diF/dt  
diF/  
dt  
t
i
t
i
dirr/dt  
dirr  
/
dt  
350  
At  
VCE  
=
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
350  
±15  
50  
V
25 °C  
125 °C  
150 °C  
±15  
8
:
Tj  
V
A
:
VGE  
=
=
Tj  
R gon  
=
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
IC MAX  
I
I
I
V
At  
Tj =  
175  
°C  
Ω
8
8
R gon  
R goff  
=
=
Ω
Copyright Vincotech  
40  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Hihg Boost Switching Definitions  
General conditions  
=
=
=
125 °C  
8 Ω  
8 Ω  
T j  
Rgon  
R goff  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
VGE  
IC  
VGE  
VCE  
tEoff  
VCE  
tEon  
VGE (0%) =  
-15  
V
VGE (0%) =  
-15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
350  
50  
V
350  
50  
V
A
A
96  
ns  
66  
ns  
t doff  
=
tdon  
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
350  
50  
V
350  
50  
V
VC (100%) =  
I C (100%) =  
t f =  
VC (100%) =  
I C (100%) =  
A
A
19  
ns  
tr  
=
11  
ns  
Copyright Vincotech  
41  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
High Boost Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
fitted  
IF  
VF  
350  
50  
V
50  
A
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
I F (100%) =  
Q r (100%) =  
A
2,48  
μC  
59  
A
t rr  
=
105  
ns  
High Boost Measurement circuits  
figure 1.  
Copyright Vincotech  
42  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Input Boost Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
E
E
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
=
400  
0 / 15  
8
V
V
Ω
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
400  
0 / 15  
50  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
R goff  
8
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
E
E
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
400  
0 / 15  
8
V
V
Ω
400  
0 / 15  
50  
V
V
A
VCE  
VGE  
=
=
=
Tj:  
VCE  
VGE  
I C  
=
=
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
Copyright Vincotech  
43  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Input Boost Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C)  
t = f(R g)  
t
t
With an inductive load at  
With an inductive load at  
150  
400  
0 / 15  
8
°C  
V
150  
400  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
0 / 15  
50  
V
Ω
Ω
A
8
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
400  
At  
VCE  
=
V
V
Ω
At  
VCE  
=
400  
V
V
A
25 °C  
25 °C  
VGE  
R gon  
=
=
0 / 15  
8
Tj:  
VGE  
I C  
=
0 / 15  
50  
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
Copyright Vincotech  
44  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Input Boost Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
400  
0 / 15  
8
V
V
Ω
400  
V
V
A
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
25 °C  
25 °C  
0 / 15  
50  
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon)  
I
I
400  
0 / 15  
8
V
V
Ω
400  
V
V
A
At  
VCE  
=
At  
VCE  
VGE  
I C  
=
25 °C  
25 °C  
0 / 15  
50  
VGE  
=
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
=
Copyright Vincotech  
45  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Input Boost Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon)  
diF/dt  
diF/  
dt  
t
i
t
i
dirr/dt  
dirr  
/
dt  
400  
At  
VCE  
=
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
400  
0 / 15  
50  
V
25 °C  
125 °C  
150 °C  
0 / 15  
8
:
Tj  
V
A
:
VGE  
=
=
Tj  
R gon  
=
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
IC MAX  
I
I
I
V
At  
Tj =  
175  
°C  
Ω
8
8
R gon  
R goff  
=
=
Ω
Copyright Vincotech  
46  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Input Boost Switching Definitions  
General conditions  
=
=
=
125 °C  
8 Ω  
8 Ω  
T j  
Rgon  
R goff  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
VGE  
IC  
VGE  
VCE  
tEoff  
VCE  
tEon  
VGE (0%) =  
0
V
VGE (0%) =  
0
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
400  
50  
V
400  
50  
V
A
A
156  
ns  
25  
ns  
t doff  
=
tdon  
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
400  
50  
V
400  
50  
V
VC (100%) =  
I C (100%) =  
t f =  
VC (100%) =  
I C (100%) =  
A
A
17  
ns  
tr  
=
10  
ns  
Copyright Vincotech  
47  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Input Boost Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
fitted  
IF  
VF  
400  
50  
V
50  
A
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
I F (100%) =  
Q r (100%) =  
A
3,20  
μC  
63  
A
t rr  
=
91  
ns  
Copyright Vincotech  
48  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Ordering Code & Marking  
Version  
without thermal paste 12 mm housing with solder pins  
without thermal paste 12 mm housing with press-fit pins  
Ordering Code  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
Name  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
Date code  
WWYY  
Serial  
UL & VIN  
UL VIN  
Lot  
Serial  
Text  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table  
Pin  
1
X
Y
9
6
3
0
0
0
0
3
6
9
Function  
G22  
S14  
52,3  
2
52,3  
3
52,3  
G14  
Ph2  
4
49,3  
5
46,8  
Ph2  
6
30,75  
28,25  
25,25  
25,25  
25,25  
Ph1  
7
Ph1  
8
G12  
S12  
9
10  
G21  
11  
12  
13  
19,75  
19,75  
12,6  
0
2,5  
0
Boost2  
Boost2  
DC+In2  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
12,6  
7,1  
2,5  
0
DC+In2  
DC+In1  
DC+In1  
Boost1  
Boost1  
DC+Boost  
DC+Boost  
DC-Boost  
DC-Boost  
G25  
7,1  
2,5  
0
0
0
2,5  
11,1  
11,1  
11,1  
11,1  
0
15,1  
17,6  
26  
28,3  
28,3  
28,3  
28,3  
28,3  
28,3  
28,3  
28,3  
28,3  
28,3  
28,3  
17,7  
17,7  
11,2  
8,7  
3
S25  
19,2  
22,2  
26,4  
31,3  
36,8  
41,9  
47,4  
52,3  
40,85  
37,85  
39,35  
39,35  
52,3  
S27  
G27  
G11  
S11  
Therm1  
Therm2  
S13  
G13  
DC-2  
DC-1  
DC+  
DC+  
17,3  
A20  
Copyright Vincotech  
49  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Pinout  
Identification  
ID  
Component  
IGBT  
Voltage  
650 V  
Current  
50 A  
Function  
Low Buck Switch  
Comment  
T11, T13  
T12, T14  
D21, D22  
T21, T22  
D12, D14  
D20  
IGBT  
FWD  
650 V  
650 V  
650 V  
650 V  
650 V  
650 V  
650 V  
1600 V  
650 V  
630 V  
50 A  
30 A  
50 A  
30 A  
30 A  
50 A  
50 A  
65 A  
10 A  
High Buck Switch  
Buck Diode  
IGBT  
Boost Switch  
FWD  
Low Boost Diode  
High Boost Diode  
Input Boost Switch  
Input Boost Diode  
ByPass Diode  
FWD  
T25, T27  
D25, D27  
D26, D28  
D45, D47  
C10  
IGBT  
FWD  
Rectifer  
FWD  
Input Boost Sw. Protection Diode  
Capacitor (DC)  
Capacitor  
NTC  
Rt  
Thermistor  
Copyright Vincotech  
50  
13 Mar. 2019 / Revision 3  
10-FY07BVA050S5-LF44E18  
10-PY07BVA050S5-LF44E18Y  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 1 packages see vincotech.com website.  
Package data  
Package data for flow 1 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-xY07BVA050S5-LF44E18x-D3-14  
13 Mar. 2019  
Correction of Ic/If values  
1,2,3  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
51  
13 Mar. 2019 / Revision 3  

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