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10-FY07BVA075S5-LF45E18 [VINCOTECH]

High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
10-FY07BVA075S5-LF45E18
型号： 10-FY07BVA075S5-LF45E18
厂家： VINCOTECH    VINCOTECH
描述：

High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
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10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
650 V / 75 A  
flow SOL 1 BI (TL)  
Features  
flow 1 12 mm housing  
● Dual Booster with bypass diode + H6.5 Bridge  
● S5 IGBT Chipset for higher efficiency  
● Kelvin emitter for improved switching  
● Integrated DC Link capacitor  
● Integrated NTC  
● Low inductive design  
Press-fit pin  
Solder pin  
Schematic  
Target applications  
● Solar Inverters  
Types  
● 10-FY07BVA075S5-LF45E18  
● 10-PY07BVA075S5-LF45E18Y  
Maximum Ratings  
T
j
= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Low Buck Switch / High Buck Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
650  
58  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
225  
86  
A
W
V
±20  
175  
Maximum junction temperature  
°C  
Copyright Vincotech  
1
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Buck Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
650  
47  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
100  
63  
A
Tj = Tjmax  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Boost Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
650  
58  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
225  
86  
A
W
V
±20  
175  
Maximum junction temperature  
°C  
Low Boost Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
650  
47  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
100  
63  
A
Tj = Tjmax  
W
°C  
Tjmax  
Maximum junction temperature  
175  
High Boost Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
650  
47  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
100  
63  
A
Tj = Tjmax  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
2
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Input Boost Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
650  
58  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
225  
86  
A
W
V
±20  
175  
Maximum junction temperature  
°C  
Input Boost Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
650  
55  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
tp limited by Tjmax  
Tj = Tjmax  
150  
71  
A
W
°C  
Tjmax  
Maximum junction temperature  
175  
ByPass Diode  
VRRM  
IF  
Ptot  
Tjmax  
Peak repetitive reverse voltage  
1600  
75  
V
A
Continuous (direct) forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
95  
W
°C  
Maximum junction temperature  
150  
Input Boost Sw. Protection Diode  
VRRM  
IF  
Ptot  
Tjmax  
Peak repetitive reverse voltage  
Continuous (direct) forward current  
Total power dissipation  
650  
10  
V
A
Tj = Tjmax  
Ts = 80 °C  
33  
W
°C  
Maximum junction temperature  
175  
Capacitor (DC)  
VMAX  
Top  
Maximum DC voltage  
630  
V
Operation Temperature  
-55…+125  
°C  
Copyright Vincotech  
3
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Module Properties  
Thermal Properties  
Storage temperature  
Tstg  
Tjop  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
tp = 2 s  
6000  
2500  
V
Visol  
Isolation voltage  
AC Voltage  
tp = 1 min  
V
Creepage distance  
Clearance  
min. 12,7  
8,16 / 7,93  
> 200  
mm  
mm  
Solder pins / Press-fit pins  
Comparative Tracking Index  
*100 % tested in production  
CTI  
Copyright Vincotech  
4
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Low Buck Switch / High Buck Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,00075 25  
25  
3,2  
4
4,8  
V
V
1,56  
1,56  
1,59  
1,75  
Collector-emitter saturation voltage  
VCEsat  
15  
75  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
50  
µA  
nA  
Ω
20  
100  
none  
4500  
130  
17  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
15  
520  
75  
164  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,10  
K/W  
Dynamic  
25  
31  
31  
31  
td(on)  
125  
150  
25  
Turn-on delay time  
10  
tr  
Rise time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
10  
11  
110  
126  
132  
10  
Rgon = 4 Ω  
Rgoff = 4 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
-5 / 15  
350  
75  
tf  
25  
32  
0,450  
0,701  
0,758  
0,457  
0,875  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 2,2 μC  
= 4 μC  
= 4,7 μC  
Eon  
Turn-on energy (per pulse)  
mWs  
125  
Eoff  
Turn-off energy (per pulse)  
150  
1,02  
Copyright Vincotech  
5
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Buck Diode  
Static  
25  
1,50  
1,44  
1,42  
1,92  
2,65  
VF  
IR  
125  
150  
Forward voltage  
50  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,50  
K/W  
Dynamic  
25  
86  
110  
117  
IRRM  
125  
150  
25  
Peak recovery current  
A
55  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
87  
101  
ns  
di/dt = 5329 A/μs  
di/dt = 8023 A/μs -5 / 15  
di/dt = 7260 A/μs  
2,18  
4,04  
4,70  
0,381  
0,839  
1,02  
5984  
4040  
4174  
350  
75  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
Copyright Vincotech  
6
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,00075 25  
25  
3,2  
4
4,8  
V
V
1,56  
1,56  
1,59  
1,75  
Collector-emitter saturation voltage  
VCEsat  
15  
75  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
50  
µA  
nA  
Ω
20  
100  
none  
4500  
130  
17  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
15  
520  
75  
164  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,10  
K/W  
Dynamic (T21,D12)  
25  
60  
62  
60  
td(on)  
125  
150  
25  
Turn-on delay time  
11  
tr  
Rise time  
125  
150  
25  
10  
11  
88  
Rgoff = 4 Ω  
Rgon = 4 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
106  
109  
12  
17  
22  
0,661  
0,904  
0,986  
0,604  
1,04  
1,11  
±15  
350  
76  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 2,2 μC  
= 4,1 μC  
= 4,7 μC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
Eoff  
Copyright Vincotech  
7
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Low Boost Diode  
Static  
25  
1,50  
1,44  
1,42  
1,92  
2,65  
VF  
IR  
125  
150  
Forward voltage  
50  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,50  
K/W  
Dynamic  
25  
83  
93  
94  
IRRM  
125  
150  
25  
Peak recovery current  
A
59  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
100  
117  
ns  
di/dt = 6510 A/μs  
di/dt = 4900 A/μs ±15  
di/dt = 6125 A/μs  
2,18  
4,08  
4,73  
0,470  
0,935  
1,10  
5969  
1181  
1324  
350  
76  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
Copyright Vincotech  
8
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,00075 25  
25  
3,2  
4
4,8  
V
V
1,56  
1,56  
1,59  
1,75  
Collector-emitter saturation voltage  
VCEsat  
15  
75  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
50  
µA  
nA  
Ω
20  
100  
none  
4500  
130  
17  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
15  
520  
75  
164  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic (T21,D20)  
Turn-on delay time  
1,10  
K/W  
25  
65  
64  
66  
td(on)  
125  
150  
25  
12  
tr  
Rise time  
125  
150  
25  
11  
13  
87  
Rgoff = 4 Ω  
Rgon = 4 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
105  
110  
14  
21  
31  
0,527  
0,873  
0,855  
0,733  
1,04  
1,29  
±15  
350  
76  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 2,1 μC  
= 4 μC  
= 4,5 μC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
Eoff  
Copyright Vincotech  
9
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
High Boost Diode  
Static  
25  
1,50  
1,44  
1,42  
1,92  
2,65  
VF  
IR  
125  
150  
Forward voltage  
50  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,50  
K/W  
Dynamic  
25  
71  
92  
92  
IRRM  
125  
150  
25  
Peak recovery current  
A
57  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
105  
113  
ns  
di/dt = 6622 A/μs  
di/dt = 6272 A/μs ±15  
di/dt = 6687 A/μs  
2,14  
4,02  
4,51  
0,629  
1,05  
1,27  
1089  
1422  
1342  
350  
76  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
Copyright Vincotech  
10  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Input Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,00075 25  
25  
3,2  
4
4,8  
V
V
1,56  
1,56  
1,59  
1,75  
Collector-emitter saturation voltage  
VCEsat  
15  
75  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
50  
µA  
nA  
Ω
20  
100  
none  
4500  
130  
17  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
15  
520  
75  
164  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,10  
K/W  
25  
24  
24  
24  
td(on)  
125  
150  
25  
Turn-on delay time  
11  
tr  
Rise time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
12  
12  
127  
145  
150  
22  
Rgon = 4 Ω  
Rgoff = 4 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
0 / 15  
350  
75  
tf  
30  
36  
0,379  
0,605  
0,681  
0,854  
1,24  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 2,5 μC  
= 4,7 μC  
= 5,4 μC  
Eon  
Turn-on energy (per pulse)  
mWs  
125  
Eoff  
Turn-off energy (per pulse)  
150  
1,36  
Copyright Vincotech  
11  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Input Boost Diode  
Static  
25  
1,53  
1,49  
1,47  
1,92  
3,8  
VF  
IR  
125  
150  
Forward voltage  
75  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,34  
K/W  
25  
92  
116  
123  
IRRM  
125  
150  
25  
Peak recovery current  
A
53  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
84  
94  
ns  
di/dt = 8536 A/μs  
di/dt = 6881 A/μs 0 / 15  
di/dt = 6458 A/μs  
2,49  
4,66  
5,38  
0,672  
1,27  
1,46  
2911  
2634  
2713  
350  
75  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
ByPass Diode  
Static  
25  
125  
1,10  
1,04  
VF  
IR  
Forward voltage  
Reverse leakage current  
Thermal  
75  
V
1600  
25  
50  
µA  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
0,74  
K/W  
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10-PY07BVA075S5-LF45E18Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Input Boost Sw. Protection Diode  
Static  
25  
125  
1,67  
1,56  
1,87  
0,14  
VF  
IR  
Forward voltage  
Reverse leakage current  
Thermal  
10  
V
650  
25  
µA  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
2,87  
100  
K/W  
Capacitor (DC)  
Capacitance  
C
nF  
%
%
Tolerance  
-10  
+10  
2,5  
Dissipation factor  
Thermistor  
Rated resistance  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
22  
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 1484 Ω  
-5  
5
5
mW  
mW/K  
K
1,5  
B(25/50) Tol. ±1 %  
B(25/100) Tol. ±1 %  
3962  
4000  
B-value  
K
Vincotech NTC Reference  
I
Copyright Vincotech  
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10-PY07BVA075S5-LF45E18Y  
datasheet  
Low Buck Switch / High Buck Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
I
I
I
I
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
=
250  
150  
μs  
°C  
VGE  
=
Tj:  
Tj =  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
I
I
I
Z
Z
Z
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
Tj:  
=
1,10  
K/W  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
2,16E-01  
6,30E-01  
1,62E-01  
3,68E-02  
6,02E-02  
4,05E-01  
6,87E-02  
1,13E-02  
2,51E-03  
3,09E-04  
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datasheet  
Low Buck Switch / High Buck Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Gate voltage vs gate charge  
Safe operating area  
VGE = f(Q G  
)
I C = f(VCE)  
I
I
I
I
V
V
V
V
D =  
single pulse  
80 ºC  
I C=  
75  
A
Ts  
=
VGE  
=
±15  
V
Tj =  
Tjmax  
ºC  
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datasheet  
Buck Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
1,50  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
1,03E-01  
2,05E-01  
6,39E-01  
3,39E-01  
1,71E-01  
4,45E-02  
4,73E+00  
5,53E-01  
8,31E-02  
2,02E-02  
4,42E-03  
1,30E-03  
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datasheet  
Boost Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
I
I
I
I
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
=
250  
150  
μs  
°C  
VGE  
=
Tj:  
Tj =  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
I
I
I
Z
Z
Z
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D
=
tp  
1,10  
IGBT thermal model values  
(K/W)  
/ T  
VCE  
=
Tj:  
R th(j-s)  
=
K/W  
R
τ
(s)  
2,16E-01  
6,30E-01  
1,62E-01  
3,68E-02  
6,02E-02  
4,05E-01  
6,87E-02  
1,13E-02  
2,51E-03  
3,09E-04  
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datasheet  
Boost Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Gate voltage vs gate charge  
Safe operating area  
VGE = f(Q G)  
I C = f(VCE)  
I
I
I
I
V
V
V
V
D =  
single pulse  
80 ºC  
I C=  
75  
A
Ts  
=
VGE  
=
±15  
V
Tj =  
Tjmax  
ºC  
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datasheet  
Low Boost Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
1,50  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
1,03E-01  
2,05E-01  
6,39E-01  
3,39E-01  
1,71E-01  
4,45E-02  
4,73E+00  
5,53E-01  
8,31E-02  
2,02E-02  
4,42E-03  
1,30E-03  
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datasheet  
High Boost Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
1,50  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
1,03E-01  
2,05E-01  
6,39E-01  
3,39E-01  
1,71E-01  
4,45E-02  
4,73E+00  
5,53E-01  
8,31E-02  
2,02E-02  
4,42E-03  
1,30E-03  
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datasheet  
Input Boost Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
I
I
I
I
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
=
250  
150  
μs  
°C  
VGE  
=
Tj:  
Tj =  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
I
I
I
Z
Z
Z
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D
=
tp  
1,10  
IGBT thermal model values  
(K/W)  
/ T  
VCE  
=
Tj:  
R th(j-s)  
=
K/W  
R
τ
(s)  
2,16E-01  
6,30E-01  
1,62E-01  
3,68E-02  
6,02E-02  
4,05E-01  
6,87E-02  
1,13E-02  
2,51E-03  
3,09E-04  
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datasheet  
Input Boost Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Gate voltage vs gate charge  
Safe operating area  
VGE = f(Q G  
)
I C = f(VCE)  
I
I
I
I
V
V
V
V
D =  
single pulse  
I C=  
75  
A
Ts  
=
80  
ºC  
VGE  
=
±15  
Tjmax  
V
Tj =  
ºC  
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datasheet  
Input Boost Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
1,34  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
5,84E-02  
1,57E-01  
5,86E-01  
3,27E-01  
1,27E-01  
8,12E-02  
3,64E+00  
5,25E-01  
1,06E-01  
2,57E-02  
4,84E-03  
4,11E-04  
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datasheet  
ByPass Diode Characteristics  
figure 1.  
Bypass diode  
figure 2.  
Bypass diode  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
100  
Z
Z
Z
Z
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
D =  
R th(j-s)  
tp / T  
0,74  
Tj:  
K/W  
Diode thermal model values  
R (K/W)  
τ
(s)  
6,95E-02  
1,21E-01  
2,75E-01  
2,24E-01  
3,60E-02  
1,01E-02  
7,08E+00  
1,15E+00  
1,52E-01  
5,48E-02  
4,07E-03  
1,33E-03  
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datasheet  
Input Boost Sw. Protection Diode Characteristics  
figure 1.  
Prot. Diode  
figure 2.  
Prot. Diode  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
D =  
R th(j-s)  
tp / T  
2,87  
Tj:  
K/W  
Prot. Diode thermal model values  
R (K/W)  
τ
(s)  
6,53E-02  
1,48E-01  
1,31E+00  
7,32E-01  
4,04E-01  
2,11E-01  
3,94E+00  
4,48E-01  
5,96E-02  
1,36E-02  
2,79E-03  
5,37E-04  
Thermistor Characteristics  
Typical Thermistor resistance values  
figure 1.  
Thermistor  
Typical NTC characteristic as a function of temperature  
as a function of temperature  
R = f(T)  
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datasheet  
Buck Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
E
E
E
E
E
E
E
E
25 °C  
With an inductive load at  
With an inductive load at  
25 °C  
350  
V
V
Ω
Ω
350  
-5 / 15  
75  
V
V
A
VCE  
VGE  
=
=
=
=
Tj:  
VCE  
VGE  
I C  
=
=
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
-5 / 15  
R gon  
R goff  
4
4
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
E
E
E
E
E
E
E
E
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
350  
-5 / 15  
4
V
V
Ω
350  
-5 / 15  
75  
V
V
A
VCE  
VGE  
=
=
=
Tj:  
VCE  
VGE  
I C  
=
=
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
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datasheet  
Buck Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
350  
-5 / 15  
4
°C  
V
150  
350  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
-5 / 15  
75  
V
Ω
Ω
A
4
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
25 °C  
At  
VCE  
=
350  
-5 / 15  
4
V
V
Ω
At  
VCE  
=
350  
V
V
A
25 °C  
VGE  
R gon  
=
=
Tj:  
VGE  
I C  
=
-5 / 15  
75  
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
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datasheet  
Buck Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
25 °C  
350  
V
V
Ω
350  
-5 / 15  
75  
V
V
A
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
25 °C  
=
-5 / 15  
4
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
I
I
I I  
I I  
I
I
25 °C  
At  
VCE  
=
350  
V
V
Ω
At  
VCE  
=
350  
-5 / 15  
75  
V
V
A
25 °C  
-5 / 15  
4
VGE  
=
=
Tj:  
VGE  
I C  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
=
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datasheet  
Buck Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon  
)
diF/dt  
diF  
/
dt  
t
t
t
t
t
t
t
t
di  
rr/dt  
i
i
i
i
dir r  
/dt  
i
i
i
i
At  
VCE  
=
350  
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
350  
V
V
A
25 °C  
-5 / 15  
4
:
Tj  
-5 / 15  
75  
:
Tj  
125 °C  
150 °C  
VGE  
=
=
=
R gon  
=
Buck Switching Characteristics  
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
I
I
I
IC MAX  
I
I
I
I
I
I
I
I
I
V
V
V
V
At  
175  
°C  
Ω
Tj  
=
=
=
4
4
R gon  
R goff  
Ω
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datasheet  
Buck Switching Definitions  
General conditions  
=
=
=
125 °C  
4 Ω  
4 Ω  
T j  
Rgon  
R goff  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff  
=
integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VCE  
VGE  
tEoff  
VCE  
tEon  
VGE (0%) =  
-5  
V
VGE (0%) =  
-5  
V
V
V
A
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
350  
75  
V
350  
75  
A
126  
ns  
31  
ns  
t doff  
=
tdon  
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
VC (100%) =  
I C (100%) =  
350  
75  
V
VC (100%) =  
I C (100%) =  
350  
75  
V
A
A
t f  
=
25  
ns  
tr  
=
10  
ns  
Copyright Vincotech  
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04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Buck Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr  
=
integrating time for Qr)  
Qr  
IF  
fitted  
IF  
VF  
350  
75  
V
75  
A
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
I F (100%) =  
Q r (100%) =  
A
4,04  
μC  
110  
87  
A
t rr  
=
ns  
Copyright Vincotech  
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04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Buck Switching measurement circuit  
Copyright Vincotech  
32  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Low Boost Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g  
)
E = f(I C  
)
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
350  
±15  
4
V
V
Ω
Ω
j
:
350  
±15  
76  
V
V
A
VCE  
VGE  
=
=
=
=
T
VCE  
VGE  
I C  
=
=
=
Tj:  
R gon  
R goff  
4
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c  
)
Erec = f(R g)  
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
350  
±15  
4
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
350  
±15  
76  
V
V
A
:
Tj  
VCE  
VGE  
=
=
=
R gon  
Copyright Vincotech  
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04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Low Boost Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
350  
±15  
4
°C  
V
150  
350  
±15  
76  
°C  
V
Tj  
VCE  
=
=
=
=
=
Tj  
VCE  
VGE  
I C  
=
=
=
=
VGE  
V
V
Ω
Ω
A
R gon  
R goff  
4
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
350  
A
t
VCE  
=
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
=
350  
V
V
A
25 °C  
125 °C  
150 °C  
±15  
4
:
Tj  
VGE  
I C  
=
±15  
76  
:
Tj  
VGE  
R gon  
=
=
=
Copyright Vincotech  
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04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Low Boost Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
350  
±15  
4
V
V
Ω
25 °C  
125 °C  
150 °C  
350  
±15  
76  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
:
Tj  
:
Tj  
=
=
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
I
I
I I  
I I  
I
I
At  
VCE  
=
350  
±15  
4
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
=
350  
±15  
76  
V
V
A
25 °C  
125 °C  
150 °C  
:
Tj  
:
Tj  
VGE  
=
=
VGE  
I C  
=
R gon  
=
Copyright Vincotech  
35  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Low Boost Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon  
)
diF/dt  
diF  
/
dt  
t
t
t
t
t
t
t
t
di  
rr/dt  
i
i
i
i
dir r  
/dt  
i
i
i
i
350  
At  
VCE  
=
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
350  
±15  
76  
V
V
A
25 °C  
±15  
4
:
Tj  
:
Tj  
125 °C  
150 °C  
VGE  
=
=
=
R gon  
=
Boost Switching Characteristics  
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
I
I
I
I
IC MAX  
I
I
I
I
I
I
I
I
V
V
V
V
At  
175  
°C  
Ω
Tj  
=
=
=
4
4
R gon  
R goff  
Ω
Copyright Vincotech  
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04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Low Boost Switching Definitions  
General conditions  
=
=
=
125 °C  
4 Ω  
T j  
Rgon  
R goff  
4 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff  
=
integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
VGE (0%) =  
-15  
15  
V
VGE (0%) =  
-15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
350  
76  
V
350  
76  
V
A
A
106  
ns  
62  
ns  
t doff  
=
tdon  
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
VC (100%) =  
I C (100%) =  
350  
76  
V
VC (100%) =  
I C (100%) =  
350  
76  
V
A
A
t f  
=
17  
ns  
tr  
=
10  
ns  
Copyright Vincotech  
37  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Low Boost Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr  
=
integrating time for Qr)  
Qr  
IF  
fitted  
IF  
VF  
350  
76  
V
76  
A
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
I F (100%) =  
Q r (100%) =  
A
4,08  
μC  
93  
A
t rr  
=
100  
ns  
Copyright Vincotech  
38  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Low Boost Switching measurement circuit  
Copyright Vincotech  
39  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
High Boost Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g  
)
E = f(I C  
)
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
350  
±15  
4
V
V
Ω
Ω
j
:
350  
±15  
76  
V
V
A
VCE  
VGE  
=
=
=
=
T
VCE  
VGE  
I C  
=
=
=
Tj:  
R gon  
R goff  
4
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c  
)
Erec = f(R g)  
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
350  
±15  
4
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
350  
±15  
76  
V
V
A
:
Tj  
VCE  
VGE  
=
=
=
R gon  
Copyright Vincotech  
40  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
High Boost Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
350  
±15  
4
°C  
V
150  
350  
±15  
76  
°C  
V
Tj  
VCE  
=
=
=
=
=
Tj  
VCE  
VGE  
I C  
=
=
=
=
VGE  
V
V
Ω
Ω
A
R gon  
R goff  
4
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
350  
A
t
VCE  
=
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
=
350  
V
V
A
25 °C  
125 °C  
150 °C  
±15  
4
:
Tj  
VGE  
I C  
=
±15  
76  
:
Tj  
VGE  
R gon  
=
=
=
Copyright Vincotech  
41  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
High Boost Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
350  
±15  
4
V
V
Ω
25 °C  
125 °C  
150 °C  
350  
±15  
76  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
:
Tj  
:
Tj  
=
=
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
I
I
I I  
I I  
I
I
At  
VCE  
=
350  
±15  
4
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
=
350  
±15  
76  
V
V
A
25 °C  
125 °C  
150 °C  
:
Tj  
:
Tj  
VGE  
=
=
VGE  
I C  
=
R gon  
=
Copyright Vincotech  
42  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
High Boost Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon  
)
diF/dt  
diF  
/
dt  
t
t
t
t
t
t
t
t
di  
rr/dt  
i
i
i
i
dir r  
/dt  
i
i
i
i
350  
At  
VCE  
=
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
350  
±15  
76  
V
V
A
25 °C  
±15  
4
:
Tj  
:
Tj  
125 °C  
150 °C  
VGE  
=
=
=
R gon  
=
Boost Switching Characteristics  
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
I
I
I
I
IC MAX  
I
I
I
I
I
I
I
I
V
V
V
V
At  
175  
°C  
Ω
Tj  
=
=
=
4
4
R gon  
R goff  
Ω
Copyright Vincotech  
43  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
High Boost Switching Definitions  
General conditions  
=
=
=
125 °C  
4 Ω  
T j  
Rgon  
R goff  
4 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff  
=
integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
VGE  
VGE  
IC  
VCE  
tEoff  
VCE  
tEon  
-15  
15  
V
-15  
V
VGE (0%) =  
VGE (0%) =  
V
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
VGE (100%) =  
VC (100%) =  
I C (100%) =  
350  
76  
V
350  
76  
V
A
A
105  
ns  
64  
ns  
t doff  
=
tdon  
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
VC (100%) =  
I C (100%) =  
350  
76  
V
VC (100%) =  
I C (100%) =  
350  
76  
V
A
A
21  
ns  
11  
ns  
t f  
=
tr =  
Copyright Vincotech  
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04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
High Boost Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr  
=
integrating time for Qr)  
Qr  
IF  
fitted  
IF  
VF  
350  
76  
V
76  
A
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
I F (100%) =  
Q r (100%) =  
A
4,02  
μC  
92  
A
t rr  
=
105  
ns  
Copyright Vincotech  
45  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
High Boost Switching measurement circuit  
Copyright Vincotech  
46  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Input Boost Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g  
)
E = f(I C  
)
E
E
E
E
E
E
E
E
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
350  
0 / 15  
4
V
V
Ω
Ω
350  
0 / 15  
75  
V
V
A
VCE  
VGE  
=
=
=
=
Tj:  
VCE  
VGE  
I C  
=
=
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
R goff  
4
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c  
)
Erec = f(R g)  
E
E
E
E
E
E
E
E
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
350  
0 / 15  
4
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
350  
0 / 15  
75  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
Copyright Vincotech  
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04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Input Boost Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
350  
0 / 15  
4
°C  
V
150  
°C  
V
Tj =  
Tj =  
350  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
0 / 15  
75  
V
Ω
Ω
A
4
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
350  
V
V
Ω
350  
V
V
A
At  
VCE  
=
At  
VCE =  
25 °C  
25 °C  
0 / 15  
4
0 / 15  
75  
VGE  
R gon  
=
=
Tj:  
VGE  
I C  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
Copyright Vincotech  
48  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Input Boost Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
At  
VCE  
VGE  
R gon  
=
350  
0 / 15  
4
V
V
Ω
At  
VCE  
VGE  
I C  
=
350  
0 / 15  
75  
V
V
A
25 °C  
25 °C  
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
I
I
I I  
I I  
I
I
At  
VCE  
=
350  
0 / 15  
4
V
V
Ω
At  
VCE  
=
350  
0 / 15  
75  
V
V
A
25 °C  
25 °C  
VGE  
=
=
Tj:  
VGE  
I C  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
=
Copyright Vincotech  
49  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Input Boost Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon  
)
diF/dt  
diF  
/
dt  
t
t
t
t
t
t
t
t
di  
rr/dt  
i
i
i
i
dir r  
/dt  
i
i
i
i
350  
At  
VCE  
=
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
350  
V
V
A
25 °C  
0 / 15  
4
:
Tj  
0 / 15  
75  
:
Tj  
125 °C  
150 °C  
VGE  
=
=
=
R gon  
=
Input Boost Switching Characteristics  
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
IC MAX  
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At  
175  
°C  
Ω
Tj  
=
=
=
4
4
R gon  
R goff  
Ω
Copyright Vincotech  
50  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Input Boost Switching Definitions  
General conditions  
=
=
=
125 °C  
4 Ω  
4 Ω  
T j  
Rgon  
R goff  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff  
=
integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
VGE  
IC  
VGE  
VCE  
tEoff  
VCE  
tEon  
VGE (0%) =  
0
V
VGE (0%) =  
0
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
350  
75  
145  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
350  
75  
24  
V
V
V
A
A
ns  
ns  
t doff  
=
tdon  
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
VC (100%) =  
I C (100%) =  
t f =  
350  
75  
V
VC (100%) =  
I C (100%) =  
350  
75  
V
A
A
30  
ns  
tr  
=
12  
ns  
Copyright Vincotech  
51  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Input Boost Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr  
=
integrating time for Qr)  
Qr  
IF  
fitted  
IF  
VF  
350  
75  
V
75  
A
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
I F (100%) =  
Q r (100%) =  
A
4,66  
μC  
116  
84  
A
t rr  
=
ns  
Copyright Vincotech  
52  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Ordering Code & Marking  
Version  
without thermal paste 12 mm housing with solder pins  
without thermal paste 12 mm housing with press-fit pins  
Ordering Code  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
Name  
Text  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVVWWYY UL  
VIN LLLLL SSSS  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table  
Pin  
1
X
Y
9
6
3
0
0
0
0
3
6
Function  
G22  
52,3  
52,3  
52,3  
49,3  
46,8  
30,75  
28,25  
25,25  
25,25  
2
S14  
G14  
Ph2  
Ph2  
Ph1  
Ph1  
G12  
S12  
3
4
5
6
7
8
9
10  
11  
12  
13  
25,25  
19,75  
19,75  
12,6  
9
0
G21  
Boost2  
Boost2  
DC+In2  
2,5  
0
14  
15  
16  
17  
18  
19  
20  
21  
22  
12,6  
7,1  
7,1  
0
2,5  
0
DC+In2  
DC+In1  
2,5  
0
DC+In1  
Boost1  
0
2,5  
15,1  
17,6  
26  
Boost1  
11,1  
11,1  
11,1  
11,1  
DC+Boost  
DC+Boost  
DC-Boost  
DC-Boost  
28,3  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
0
28,3  
28,3  
28,3  
28,3  
28,3  
28,3  
28,3  
28,3  
28,3  
28,3  
17,7  
17,7  
11,2  
8,7  
G25  
S25  
3
19,2  
22,2  
26,4  
31,3  
36,8  
41,9  
47,4  
52,3  
40,85  
37,85  
39,35  
39,35  
52,3  
S27  
G27  
G11  
S11  
Therm1  
Therm2  
S13  
G13  
DC-2  
DC-1  
DC+  
DC+  
A20  
17,3  
Copyright Vincotech  
53  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
T13, T14  
IGBT  
650 V  
75 A  
75 A  
50 A  
75 A  
50 A  
50 A  
75 A  
75 A  
75 A  
10 A  
Low Buck Switch  
High Buck Switch  
Buck Diode  
T12, T14  
D21, D22  
T21, T22  
D12, D14  
D20  
IGBT  
FWD  
650 V  
650 V  
650 V  
650 V  
650 V  
650 V  
650 V  
650 V  
1600 V  
630 V  
IGBT  
Boost Switch  
FWD  
Low Boost Diode  
High Boost Diode  
Input Boost Switch  
Input Boost Diode  
ByPass Diode  
FWD  
T25, T27  
D25, D27  
D26, D28  
D45, D47  
C10  
IGBT  
FWD  
Rectifier  
Prot. Diode  
Capacitor  
NTC  
Input Boost Sw. Protection Diode  
Capacitor (DC)  
Rt  
Thermistor  
Copyright Vincotech  
54  
04 May. 2018 / Revision 2  
10-FY07BVA075S5-LF45E18  
10-PY07BVA075S5-LF45E18Y  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 1 packages see vincotech.com website.  
Package data  
Package data for flow 1 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-xY07BVA075S5-LF45E18x-D2-14  
04 May. 2018  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
55  
04 May. 2018 / Revision 2  

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