10-FY07HVA100S502-L986F18 [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 10-FY07HVA100S502-L986F18 |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总37页 (文件大小：4818K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
flowPACK 1 H6.5
650 V / 100 A
Features
flow 1 12 mm housing
● Innovative H6.5 topology
● Fast IGBT S5
● Optimized for wide range of load conditions
● LVRT (Low voltage ride through) capability
● Integrated temperature sensor
Schematic
Target applications
● Solar Inverters
● Special Application
Types
● 10-FY07HVA100S502-L986F18
● 10-PY07HVA100S502-L986F18Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Low Buck Switch / High Buck switch
Collector-emitter voltage
650
82
V
A
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
300
117
±20
175
A
tp limited by Tjmax
Tj = Tjmax
W
V
Maximum junction temperature
°C
1
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
Peak repetitive reverse voltage
650
55
V
A
VRRM
IF
IFRM
Ptot
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
150
71
A
tp limited by Tjmax
Tj = Tjmax
W
°C
Maximum junction temperature
175
Tjmax
Boost Switch
Collector-emitter voltage
650
58
V
A
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
225
86
A
tp limited by Tjmax
Tj = Tjmax
W
V
±20
175
Maximum junction temperature
°C
Low Boost Diode
Peak repetitive reverse voltage
650
55
V
A
VRRM
IF
IFRM
Ptot
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
150
71
A
tp limited by Tjmax
Tj = Tjmax
W
°C
Maximum junction temperature
175
Tjmax
High Boost Diode
Peak repetitive reverse voltage
650
55
V
A
VRRM
IF
IFRM
Ptot
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
150
71
A
tp limited by Tjmax
Tj = Tjmax
W
°C
Maximum junction temperature
175
Tjmax
2
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Storage temperature
-40…+125
°C
°C
Tstg
Tjop
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
6000
2500
V
tp = 2 s
Isolation voltage
Visol
AC Voltage
V
tp = 1 min
Creepage distance
Clearance
min. 12,7
7,85
mm
mm
mm
With Solder pins
Clearance
With Press-fit pins
8,17
Comparative Tracking Index
*100 % tested in production
CTI
> 200
3
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
Min
Max
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Low Buck Switch / High Buck switch
Static
Gate-emitter threshold voltage
0,001
100
25
3,2
4
4,8
V
V
VGE(th)
VGE = VCE
25
1,39
1,48
1,51
1,75
Collector-emitter saturation voltage
15
125
150
VCEsat
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
100
200
µA
nA
Ω
ICES
IGES
rg
20
none
6200
176
24
Cies
Coes
Cres
Qg
Output capacitance
0
25
25
25
pF
f = 1 Mhz
Reverse transfer capacitance
Gate charge
15
520
100
240
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink
0,81
K/W
Rth(j-s)
Dynamic
25
44
42
44
Turn-on delay time
125
150
25
td(on)
10
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
9
10
123
143
148
13
tr
Rgon = 4 Ω
Rgoff = 4 Ω
ns
Turn-off delay time
Fall time
td(off)
-5 / 15
350
75
20
29
tf
0,851
1,40
1,20
0,589
0,854
1,21
Qr
FWD
Qr
FWD
Qr
FWD
= 2,5 μC
= 4,6 μC
= 5,2 μC
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Eon
mWs
125
150
Eoff
4
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
Min
Max
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Buck Diode
Static
25
1,53
1,49
1,47
1,92
3,8
Forward voltage
75
125
150
V
VF
IR
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink
1,34
K/W
Rth(j-s)
Dynamic
25
79
126
129
Peak recovery current
125
150
25
A
IRRM
52
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
74
85
ns
trr
Qr
di/dt = 6740 A/μs
di/dt = 8546 A/μs
di/dt = 7991 A/μs
2,52
4,58
5,16
0,602
0,981
1,28
1298
3491
2842
-5 / 15
350
75
Recovered charge
μC
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
Erec
(dirf/dt)max
5
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
Min
Max
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Boost Switch
Static
Gate-emitter threshold voltage
0,00075 25
25
3,2
4
4,8
V
V
VGE(th)
VGE = VCE
1,44
1,52
1,59
1,75
Collector-emitter saturation voltage
15
75
125
150
VCEsat
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
ICES
IGES
rg
20
100
none
4500
130
17
Cies
Coes
Cres
Qg
Output capacitance
0
25
25
25
pF
f = 1 Mhz
Reverse transfer capacitance
Gate charge
15
520
75
164
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink
1,10
K/W
Rth(j-s)
Dynamic (T21,D12)
25
60
62
60
Turn-on delay time
125
150
25
td(on)
11
Rise time
125
150
25
10
11
88
tr
Rgoff = 4 Ω
Rgon = 4 Ω
ns
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
106
109
12
17
22
0,661
0,904
0,986
0,604
1,04
1,11
td(off)
±15
350
76
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 2,2 μC
= 4,1 μC
= 4,7 μC
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Eon
mWs
Eoff
6
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
Min
Max
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Low Boost Diode
Static
25
1,53
1,49
1,47
1,92
3,8
Forward voltage
75
125
150
V
VF
IR
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink
1,34
K/W
Rth(j-s)
Dynamic (T21,D12)
25
83
93
94
Peak recovery current
125
150
25
A
IRRM
59
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
100
117
ns
trr
Qr
di/dt = 6510 A/μs
di/dt = 4900 A/μs
di/dt = 6125 A/μs
2,18
4,08
4,73
0,470
0,935
1,10
5969
1181
1324
±15
350
76
Recovered charge
μC
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
Erec
(dirf/dt)max
7
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
Min
Max
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Boost Switch
Static
Gate-emitter threshold voltage
0,00075 25
25
3,2
4
4,8
V
V
VGE(th)
VGE = VCE
1,44
1,52
1,59
1,75
Collector-emitter saturation voltage
15
75
125
150
VCEsat
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
ICES
IGES
rg
20
100
none
4500
130
17
Cies
Coes
Cres
Qg
Output capacitance
0
25
25
25
pF
f = 1 Mhz
Reverse transfer capacitance
Gate charge
15
520
75
164
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink
1,10
K/W
Rth(j-s)
Dynamic (T21,D20)
25
65
64
66
Turn-on delay time
125
150
25
td(on)
12
Rise time
125
150
25
11
13
87
tr
Rgoff = 4 Ω
Rgon = 4 Ω
ns
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
105
110
14
21
31
0,527
0,873
0,855
0,733
1,04
1,29
td(off)
±15
350
76
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 2,1 μC
= 4 μC
= 4,5 μC
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Eon
mWs
Eoff
8
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
Min
Max
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
High Boost Diode
Static
25
1,53
1,49
1,47
1,92
3,8
Forward voltage
75
125
150
V
VF
IR
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink
1,34
K/W
Rth(j-s)
Dynamic (T21,D20)
25
71
92
92
Peak recovery current
125
150
25
A
IRRM
57
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
105
113
ns
trr
Qr
di/dt = 6622 A/μs
di/dt = 6272 A/μs
di/dt = 6687 A/μs
2,14
4,02
4,51
0,629
1,05
1,27
1089
1422
1342
±15
350
76
Recovered charge
μC
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
Erec
(dirf/dt)max
Thermistor
Rated resistance
25
100
25
25
25
25
22
kΩ
%
R
ΔR/R
P
-5
5
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
5
mW
mW/K
K
1,5
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/50)
B-value
K
B(25/100)
Vincotech NTC Reference
I
9
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Low Buck Switch / High Buck switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
V
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,81
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,67E-02
8,18E-02
3,18E-01
2,26E-01
8,12E-02
2,54E-02
3,27E-02
3,86E+00
7,09E-01
1,25E-01
4,22E-02
5,84E-03
5,78E-04
1,79E-04
10
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Low Buck Switch / High Buck switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
V
D =
single pulse
80 ºC
I C
=
100
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
11
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,34
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
5,84E-02
1,57E-01
5,86E-01
3,27E-01
1,27E-01
8,12E-02
3,64E+00
5,25E-01
1,06E-01
2,57E-02
4,84E-03
4,11E-04
12
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
V
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
1,10
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,16E-01
6,30E-01
1,62E-01
3,68E-02
6,02E-02
4,05E-01
6,87E-02
1,13E-02
2,51E-03
3,09E-04
13
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
V
D =
single pulse
80 ºC
I C=
75
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
ºC
14
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Low Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,34
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
5,84E-02
1,57E-01
5,86E-01
3,27E-01
1,27E-01
8,12E-02
3,64E+00
5,25E-01
1,06E-01
2,57E-02
4,84E-03
4,11E-04
15
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
High Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,34
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
5,84E-02
1,57E-01
5,86E-01
3,27E-01
1,27E-01
8,12E-02
3,64E+00
5,25E-01
1,06E-01
2,57E-02
4,84E-03
4,11E-04
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
16
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
With an inductive load at
25 °C
With an inductive load at
VCE
VGE
=
=
=
=
350
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
-5 / 15
75
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
-5 / 15
R gon
R goff
4
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
350
-5 / 15
4
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
-5 / 15
75
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
17
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
350
-5 / 15
4
°C
V
Tj =
150
350
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
-5 / 15
75
V
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
350
25 °C
At
VCE
=
V
V
Ω
At
VCE
=
350
-5 / 15
75
V
V
A
25 °C
VGE
=
=
-5 / 15
4
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
18
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
25 °C
At
VCE
VGE
R gon
=
350
-5 / 15
4
V
V
Ω
At
VCE
VGE
I C
=
350
-5 / 15
75
V
V
A
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
25 °C
At
VCE
=
350
-5 / 15
4
V
V
Ω
At
VCE
VGE
I C
=
350
-5 / 15
75
V
V
A
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
19
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dirr/dt
diF/dt
dir r/dt
t
t
i
i
350
At
VCE
=
V
V
Ω
25 °C
At
VCE
VGE
I C
=
350
-5 / 15
75
V
V
A
25 °C
125 °C
150 °C
VGE
R gon
=
=
-5 / 15
4
125 °C
=
Tj:
Tj:
150 °C
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
4
4
Ω
20
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Buck Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
4 Ω
4 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-5
V
VGE (0%) =
-5
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
350
75
V
350
75
V
A
A
tdoff
=
143
ns
tdon
=
42
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
350
75
V
VC (100%) =
I C (100%) =
350
75
9
V
A
A
20
ns
tr
=
ns
21
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
350
75
V
I F (100%) =
Q r (100%) =
75
A
A
4,58
μC
126
74
A
trr
=
ns
22
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Low Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
350
±15
4
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
76
V
V
A
Tj:
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
350
±15
4
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
76
V
V
A
Tj:
R gon
23
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Low Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
350
±15
4
°C
V
Tj =
150
350
±15
76
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
350
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
350
V
V
A
25 °C
125 °C
150 °C
VGE
=
=
±15
VGE
I C
=
±15
Tj:
Tj:
R gon
4
=
76
24
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Low Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
At
VCE
VGE
R gon
=
350
±15
4
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
76
V
V
A
25 °C
125 °C
150 °C
=
=
Tj:
Tj:
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
350
±15
4
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
76
V
V
A
25 °C
125 °C
150 °C
VGE
=
=
=
Tj:
Tj:
R gon
=
25
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Low Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
350
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
76
V
V
A
25 °C
VGE
R gon
=
=
±15
=
125 °C
Tj:
Tj:
4
=
150 °C
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
4
4
Ω
26
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Low Boost Switching Definitions
General conditions
T j
R gon
=
=
=
125 °C
4 Ω
4 Ω
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
76
V
350
76
V
A
A
tdoff
=
106
ns
tdon
=
62
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
350
76
V
VC (100%) =
I C (100%) =
350
76
V
A
A
17
ns
tr
=
10
ns
27
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Low Boost Switching Characteristics
Low Boost Switching measurement circuit
28
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
High Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
350
±15
4
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
76
V
V
A
Tj:
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
350
±15
4
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
76
V
V
A
Tj:
R gon
29
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
High Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
350
±15
4
°C
V
Tj =
150
350
±15
76
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
350
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
350
V
V
A
25 °C
125 °C
150 °C
VGE
=
=
±15
VGE
I C
=
±15
Tj:
Tj:
R gon
4
=
76
30
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
High Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
At
VCE
VGE
R gon
=
350
±15
4
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
76
V
V
A
25 °C
125 °C
150 °C
=
=
Tj:
Tj:
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
350
±15
4
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
76
V
V
A
25 °C
125 °C
150 °C
VGE
=
=
=
Tj:
Tj:
R gon
=
31
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
High Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
At
VCE
=
350
±15
4
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
76
V
V
A
25 °C
VGE
=
=
=
125 °C
Tj:
Tj:
R gon
=
150 °C
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
4
4
Ω
32
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
High Boost Switching Definitions
General conditions
T j
R gon
=
=
=
125 °C
4 Ω
4 Ω
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
VGE
IC
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
76
V
350
76
V
A
A
tdoff
=
105
ns
tdon
=
64
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
350
76
V
VC (100%) =
I C (100%) =
350
76
V
A
A
21
ns
tr
=
11
ns
33
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
High Boost Switching Characteristics
High Boost Switching measurement circuit
34
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
without thermal paste 12 mm housing with Press-fit pins
with thermal paste 12 mm housing with solder pins
with thermal paste 12 mm housing with Press-fit pins
Ordering Code
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
10-FY07HVA100S502-L986F18-/3/
10-PY07HVA100S502-L986F18Y-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
0
0
Function
G14
52,2
49,2
1
2
S14
3
4
Not assembled
26,1
0
0
Therm2
5
23,1
Therm1
S12
6
3
0
0
0
0
0
7
0
G12
8
8
DC+
9
10,5
17,7
DC+
10
DC-1
11
12
13
0
0
3
20,2
28,2
28,2
DC-1
G11
S11
14
15
16
17
18
19
20
21
22
10
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
G21
S21
Ph2
Ph2
Ph1
Ph1
S22
G22
S13
13
20,35
22,85
29,35
31,85
39,2
42,2
49,2
23
24
25
26
27
28
52,2
52,2
52,2
52,2
52,2
26,1
28,2
20,2
17,7
10,5
8
G13
DC-2
DC-2
DC+
DC+
A20
22,1
35
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12, T13, T14
IGBT
650 V
100 A
75 A
75 A
75 A
75 A
Low Buck Switch / High Buck switch
D21, D22
T21, T22
D12, D14
D20
FWD
IGBT
FWD
FWD
NTC
650 V
650 V
650 V
650 V
Buck Diode
Boost Switch
Low Boost Diode
High Boost Diode
Thermistor
Rt
36
Copyright Vincotech
25 Feb. 2020 / Revision 2
10-FY07HVA100S502-L986F18
10-PY07HVA100S502-L986F18Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-xY07HVA100S502-L986F18x-D2-14
25 Feb. 2020
Press-fit version added
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
37
Copyright Vincotech
25 Feb. 2020 / Revision 2
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