10-FY07NBA100S5-M506L58 [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 10-FY07NBA100S5-M506L58 |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总20页 (文件大小：1628K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10ꢀFY07NBA100S5ꢀM506L58
datasheet
650 V / 100 A
flow BOOST1 symmetric
Features
flow 1 12 mm housing
● High efficient and compact symmetric booster
● High switching frequency and low inductive design
● Low losses with TRENCHSTOP™ S5 IGBT
● Integrated temperature sensor
Schematic
Target applications
● Solar
● UPS
● Power Supply
Types
● 10ꢀFY07NBA100S5ꢀM506L58
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collectorꢀemitter voltage
650
90
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gateꢀemitter voltage
tp limited by Tjmax
Tj = Tjmax
300
133
±20
175
A
W
V
Maximum junction temperature
°C
Copyright Vincotech
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10 Jul. 2017 / Revision 1
10ꢀFY07NBA100S5ꢀM506L58
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
650
76
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
200
106
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum Junction Temperature
Boost Sw. Protection Diode
VRRM
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
650
21
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
Ptot
30
A
Tj = Tjmax
40
W
°C
Tjmax
Maximum Junction Temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
ꢀ40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
ꢀ40…(Tjmax ꢀ 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
8,44
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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10ꢀFY07NBA100S5ꢀM506L58
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gateꢀemitter threshold voltage
VGE = VCE
0,001
100
25
3,2
4
4,8
V
V
25
1,39
1,48
1,51
1,75
125
150
VCEsat
Collectorꢀemitter saturation voltage
15
ICES
IGES
rg
Collectorꢀemitter cutꢀoff current
Gateꢀemitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
100
200
µA
nA
ꢁ
20
none
6200
176
24
Cies
Coes
Cres
Qg
Output capacitance
f = 1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
520
100
240
nC
Thermal
phaseꢀchange
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,72
K/W
Dynamic
25
30
30
30
td(on)
125
150
25
Turnꢀon delay time
Rise time
10
tr
125
150
25
125
150
25
11
11
125
142
148
11
Rgoff = 2 ꢁ
Rgon = 2 ꢁ
ns
td(off)
Turnꢀoff delay time
Fall time
15/0
400
102
tf
125
150
25
125
150
25
20
28
1,139
1,538
1,568
0,855
1,410
1,564
Qr
FWD
Qr
FWD
Qr
FWD
= 3,6 ꢂC
= 6,7 ꢂC
= 7,5 ꢂC
Eon
Turnꢀon energy (per pulse)
Turnꢀoff energy (per pulse)
mWs
Eoff
125
150
Copyright Vincotech
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10ꢀFY07NBA100S5ꢀM506L58
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
1,61
1,58
1,57
1,77
5,3
VF
Ir
Forward voltage
100
125
150
V
Reverse leakage current
650
25
µA
Thermal
phaseꢀchange
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,90
K/W
Dynamic
25
124
161
168
IRRM
Peak recovery current
125
150
25
A
46
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
72
81
ns
di/dt = 9576 A/ꢂs
di/dt = 8438 A/ꢂs
di/dt = 7468 A/ꢂs
3,622
6,746
7,455
0,943
1,903
2,125
2891
3415
3241
15/0
400
102
Recovered charge
ꢂC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Boost Sw. Protection Diode
Static
25
125
1,79
1,67
1,87
0,18
VF
Ir
Forward voltage
15
V
Reverse leakage current
650
25
µA
Thermal
phaseꢀchange
material
Rth(j-s)
Thermal resistance junction to sink
2,36
K/W
λ = 3,4 W/mK
Copyright Vincotech
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10ꢀFY07NBA100S5ꢀM506L58
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kꢁ
%
Deviation of R100
Power dissipation
Power dissipation constant
Bꢀvalue
R100 = 1484 ꢁ
ꢀ5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
Bꢀvalue
K
Vincotech NTC Reference
I
Copyright Vincotech
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10ꢀFY07NBA100S5ꢀM506L58
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
ꢂs
V
25 °C
125 °C
150 °C
tp
=
250
150
7 V to 17 V in steps of 1 V
ꢂs
VGE
=
Tj:
Tj =
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10ꢀ1
10ꢀ2
10ꢀ5
10ꢀ4
10ꢀ3
10ꢀ2
10ꢀ1
100
101
tp(s)
102
tp
=
100
10
ꢂs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,72
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
7,52Eꢀ02
1,31Eꢀ01
3,01Eꢀ01
1,21Eꢀ01
4,30Eꢀ02
4,35Eꢀ02
1,73E+00
2,44Eꢀ01
6,32Eꢀ02
1,39Eꢀ02
3,50Eꢀ03
3,33Eꢀ04
Copyright Vincotech
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10ꢀFY07NBA100S5ꢀM506L58
datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G)
I C = f(VCE)
I
I
I
I
V
V
V
V
D =
single pulse
80 ºC
IC=
100
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
ºC
Copyright Vincotech
7
10 Jul. 2017 / Revision 1
10ꢀFY07NBA100S5ꢀM506L58
datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10ꢀ1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10ꢀ2
10ꢀ4
=
10ꢀ3
10ꢀ2
10ꢀ1
100
101
102
D =
R th(j-s)
tp
=
250
ꢂs
25 °C
125 °C
150 °C
tp / T
0,90
Tj:
K/W
FWD thermal model values
R
(K/W)
τ
(s)
7,42Eꢀ02
1,41Eꢀ01
3,41Eꢀ01
1,94Eꢀ01
9,09Eꢀ02
5,85Eꢀ02
3,64E+00
5,85Eꢀ01
1,04Eꢀ01
2,64Eꢀ02
6,04Eꢀ03
5,72Eꢀ04
Copyright Vincotech
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10 Jul. 2017 / Revision 1
10ꢀFY07NBA100S5ꢀM506L58
datasheet
Boost Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10ꢀ1
0,1
0,05
0,02
0,01
0,005
0,000
10ꢀ2
10ꢀ4
=
10ꢀ3
10ꢀ2
10ꢀ1
100
101
102
D =
R th(j-s)
tp
=
250
ꢂs
25 °C
125 °C
tp / T
2,36
T j:
K/W
FWD thermal model values
R (K/W)
τ
(s)
9,10Eꢀ02
2,66Eꢀ01
8,25Eꢀ01
5,40Eꢀ01
4,23Eꢀ01
2,13Eꢀ01
3,90E+00
3,08Eꢀ01
6,57Eꢀ02
1,54Eꢀ02
3,41Eꢀ03
5,87Eꢀ04
Copyright Vincotech
9
10 Jul. 2017 / Revision 1
10ꢀFY07NBA100S5ꢀM506L58
datasheet
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R = f(T)
Copyright Vincotech
10
10 Jul. 2017 / Revision 1
10ꢀFY07NBA100S5ꢀM506L58
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
400
15/0
2
V
V
ꢁ
ꢁ
T
j
:
VCE
VGE
I C
=
=
=
400
15/0
102
V
V
A
Tj:
VCE
VGE
=
=
=
=
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
400
15/0
2
V
V
ꢁ
:
400
15/0
102
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
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10 Jul. 2017 / Revision 1
10ꢀFY07NBA100S5ꢀM506L58
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
400
15/0
2
°C
V
150
400
15/0
102
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
ꢁ
ꢁ
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
400
At
VCE
=
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
=
400
V
V
A
25 °C
125 °C
150 °C
15/0
2
:
VGE
I C
=
15/0
102
:
Tj
VGE
R gon
=
=
Tj
=
Copyright Vincotech
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10 Jul. 2017 / Revision 1
10ꢀFY07NBA100S5ꢀM506L58
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
400
15/0
2
V
V
ꢁ
25 °C
125 °C
150 °C
400
15/0
102
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
At
VCE
=
400
15/0
2
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
=
400
15/0
102
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
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10 Jul. 2017 / Revision 1
10ꢀFY07NBA100S5ꢀM506L58
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF
/
dt
diF/dt
t
t
t
t
dirr/dt
dirr
/dt
t
t
t
t
i
i
i
i
i
i
i
i
At
VCE
=
400
15/0
2
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
400
15/0
102
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
ꢁ
R gon
R goff
=
=
2
2
ꢁ
Copyright Vincotech
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datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
2 ꢁ
T j
Rgon
R goff
2 ꢁ
figure 1.
IGBT
figure 2.
IGBT
Turnꢀoff Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff)
Turnꢀon Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
IC
tEoff
VCE
VGE
VCE
tEon
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
400
100
0,142
0,216
V
400
V
A
100
A
ꢂs
ꢂs
0,030
0,096
ꢂs
ꢂs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turnꢀoff Switching Waveforms & definition of tf
Turnꢀon Switching Waveforms & definition of tr
IC
VCE
tr
VCE
IC
tf
400
V
400
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
100
A
100
A
0,020
µs
0,011
µs
tr
=
Copyright Vincotech
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datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turnꢀoff Switching Waveforms & definition of tEoff
Turnꢀon Switching Waveforms & definition of tEon
Pon
Eon
Poff
Eoff
tEoff
tEon
P off (100%) =
Eoff (100%) =
40,16
1,41
0,22
kW
mJ
ꢂs
P on (100%) =
Eon (100%) =
40,16
1,54
0,10
kW
mJ
ꢂs
t Eoff
=
tEon =
figure 7.
FWD
Turnꢀoff Switching Waveforms & definition of trr
IF
VF
fitted
VF (100%) =
I F (100%) =
I RRM (100%) =
400
V
100
A
ꢀ161
0,072
A
ꢂs
t rr
=
Copyright Vincotech
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10ꢀFY07NBA100S5ꢀM506L58
datasheet
Boost Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turnꢀon Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turnꢀon Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec
)
Qr
Erec
IF
tErec
Prec
100
A
40,16
1,90
0,14
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
6,75
0,14
ꢂC
ꢂs
mJ
ꢂs
t Qr
=
tErec =
Copyright Vincotech
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10 Jul. 2017 / Revision 1
10ꢀFY07NBA100S5ꢀM506L58
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
with thermal paste 12 mm housing with solder pins
Ordering Code
10ꢀFY07NBA100S5ꢀM506L58
10ꢀFY07NBA100S5ꢀM506L58ꢀ/3/
Name
Date code
UL & VIN
Lot
Serial
NNꢀNNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NNꢀNNNNNNNNNNNNNNꢀTTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table
Pin
X
Y
Function
GND+
GND+
GND+
GND+
GNDꢀ
GNDꢀ
GNDꢀ
GNDꢀ
DCꢀ
0
2,8
1
2
0
5,4
3
0
8
4
0
10,6
17,6
20,2
22,8
25,4
28,2
28,2
28,2
28,2
28,2
28,2
20,5
20,5
17,9
17,9
10,4
10,4
7,8
5
0
6
0
7
0
8
0
9
16,6
19,2
21,8
24,4
44,2
52,2
49,6
52,2
49,6
52,2
49,6
52,2
49,6
52,2
10
11
12
13
14
15
16
17
18
19
20
21
22
DCꢀ
DCꢀ
DCꢀ
NTC1
NTC2
Bꢀ
Bꢀ
Bꢀ
Bꢀ
B+
B+
B+
7,8
B+
23
24
25
26
27
28
29
30
24,4
21,8
19,2
16,6
21,8
21,8
8,4
0
0
DC+
DC+
DC+
DC+
E2
0
0
18,3
15,5
12,7
9,9
G2
G1
E1
8,4
Copyright Vincotech
18
10 Jul. 2017 / Revision 1
10ꢀFY07NBA100S5ꢀM506L58
datasheet
Pinout
Identification
ID
Component
IGBT
Voltage
650 V
Current
Function
Comment
T1 , T2
D4 , D3
D2 , D1
NTC
100 A
100 A
15 A
Boost Switch
Boost Diode
FWD
650 V
FWD
650 V
Boost Sw. Protection Diode
Thermistor
NTC
Copyright Vincotech
19
10 Jul. 2017 / Revision 1
10ꢀFY07NBA100S5ꢀM506L58
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10ꢀFY07NBA100S5ꢀM506L58ꢀD1ꢀ14
10 Jul. 2017
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
20
10 Jul. 2017 / Revision 1
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