10-FY124PA080F2-L589F38 [VINCOTECH]
5us short circuit withstand time;High speed switching;Minimized tail current;型号: | 10-FY124PA080F2-L589F38 |
厂家: | VINCOTECH |
描述: | 5us short circuit withstand time;High speed switching;Minimized tail current |
文件: | 总18页 (文件大小:6792K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-FY124PA080F2-L589F38
datasheet
fastPACK 1
1200 V / 80 A
Topology features
flow 1 12 mm housing
● Kelvin Emitter for improved switching performance
● Open Emitter configuration
● Temperature sensor
Component features
● 5us short circuit withstand time
● High speed switching
● Minimized tail current
Housing features
● Base isolation: Al2O3
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Solder pin
Schematic
Target applications
● Charging Stations
● Power Supply
● UPS
Types
● 10-FY124PA080F2-L589F38
Copyright Vincotech
1
11 Aug. 2022 / Revision 1
10-FY124PA080F2-L589F38
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
76
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
240
186
±20
5
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 600 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
45
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
365
98
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
7,66
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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11 Aug. 2022 / Revision 1
10-FY124PA080F2-L589F38
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,004
80
25
5
6
7
V
V
25
2,18
2,39
2,44
2,6(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
20
20
0
25
25
50
µA
nA
Ω
0
500
None
6400
440
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
160
VCC = 960 V
0/15
80
316
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,51
K/W
25
52,12
52,29
52,37
8,18
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
8,54
8,57
Rgon = 4 Ω
Rgoff = 4 Ω
80,41
104,26
111,39
54,58
97,9
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
55
tf
125
150
25
ns
107,56
0,632
1,32
QrFWD=3,22 µC
QrFWD=4,79 µC
QrFWD=5,61 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
1,58
1,68
Eoff
125
150
3,01
3,43
Copyright Vincotech
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11 Aug. 2022 / Revision 1
10-FY124PA080F2-L589F38
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
2,22
2,31
2,21
2,54(1)
VF
IR
Forward voltage
50
125
150
25
V
2,5(1)
60
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
4400
8800
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,97
K/W
25
151,44
175,74
187,3
37,97
48,67
53,38
3,22
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=8873 A/µs
di/dt=8068 A/µs
di/dt=7568 A/µs
Qr
Recovered charge
±15
600
55
125
150
25
4,79
μC
5,61
1,54
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
2,15
mWs
A/µs
2,46
8057,95
7848,1
7319,99
(dirf/dt)max
125
150
Copyright Vincotech
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11 Aug. 2022 / Revision 1
10-FY124PA080F2-L589F38
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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11 Aug. 2022 / Revision 1
10-FY124PA080F2-L589F38
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
200
200
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
150
100
50
150
100
50
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
80
10
-1
60
40
20
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
59
μs
V
D =
tp / T
0,51
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,69E-02
9,41E-02
2,77E-01
6,79E-02
2,44E-02
3,44E+00
5,98E-01
1,08E-01
1,98E-02
1,61E-03
Copyright Vincotech
6
11 Aug. 2022 / Revision 1
10-FY124PA080F2-L589F38
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
1000
17,5
15,0
12,5
10,0
7,5
100
10
100µs
1ms
10ms
1
100ms
DC
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
50
100
150
200
250
300
350
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
40
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
7
11 Aug. 2022 / Revision 1
10-FY124PA080F2-L589F38
datasheet
Inverter Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
150
125
100
75
10
-1
10
-2
10
50
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
25
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,971
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,69E-02
1,47E-01
4,96E-01
1,74E-01
8,75E-02
3,87E+00
4,68E-01
9,12E-02
2,26E-02
5,01E-03
Copyright Vincotech
8
11 Aug. 2022 / Revision 1
10-FY124PA080F2-L589F38
datasheet
Thermistor Characteristics
figure 9.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
9
11 Aug. 2022 / Revision 1
10-FY124PA080F2-L589F38
datasheet
Inverter Switching Characteristics
figure 10.
IGBT
figure 11.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
6
5
4
3
2
1
0
5
4
3
2
1
0
Eoff
Eoff
Eon
Eoff
Eon
Eoff
Eoff
Eon
Eon
Eoff
Eon
Eon
0
20
40
60
80
100
120
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
Ω
125 °C
150 °C
600
±15
55
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 12.
FWD
figure 13.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
120
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
55
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
10
11 Aug. 2022 / Revision 1
10-FY124PA080F2-L589F38
datasheet
Inverter Switching Characteristics
figure 14.
IGBT
figure 15.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tf
tf
td(off)
-1
10
-1
10
td(on)
tr
tr
-2
-2
10
10
-3
10
-3
10
0
20
40
60
80
100
120
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
4
°C
V
150
600
±15
55
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 16.
FWD
figure 17.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
120
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
55
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
11
11 Aug. 2022 / Revision 1
10-FY124PA080F2-L589F38
datasheet
Inverter Switching Characteristics
figure 18.
FWD
figure 19.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
9
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
120
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
55
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 20.
FWD
figure 21.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
250
200
150
100
50
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0,0
0
20
40
60
80
100
120
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
55
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
12
11 Aug. 2022 / Revision 1
10-FY124PA080F2-L589F38
datasheet
Inverter Switching Characteristics
figure 22.
FWD
figure 23.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
15000
20000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
20
40
60
80
100
120
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
55
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 24.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
175
IC MAX
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
13
11 Aug. 2022 / Revision 1
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datasheet
Inverter Switching Definitions
figure 25.
IGBT
figure 26.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 27.
IGBT
figure 28.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
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11 Aug. 2022 / Revision 1
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datasheet
Inverter Switching Definitions
figure 29.
FWD
figure 30.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
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11 Aug. 2022 / Revision 1
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datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FY124PA080F2-L589F38
10-FY124PA080F2-L589F38-/7/
10-FY124PA080F2-L589F38-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
not assembled
2
46,3
43,6
43,6
39,2
36,2
33,2
28,8
23,8
19,4
16,4
13,4
9
0
2,7
0
DC-2
3
DC-2
DC-2
4
5
1
G13-a
S13
6
0
7
1
G13-b
Therm2
Therm1
G11-b
S11
8
0
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
1
0
1
G11-a
DC-1
2,7
0
9
DC-1
not assembled
6,3
0
not assembled
9,5
DC-1
0
DC+
DC+
DC+
Ph1
Ph1
Ph1
Ph1
Ph1
0
12,2
0
14,9
0
28,6
2,7
28,6
5,4
28,6
8,1
28,6
10,8
15,25
18,25
21,25
31,35
34,35
37,35
41,8
44,5
47,2
49,9
52,6
52,6
52,6
52,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
14,9
12,2
9,5
G12-a
S12
G12-b
G14-b
S14
G14-a
Ph2
Ph2
Ph2
Ph2
Ph2
DC+
DC+
DC+
not assembled
Copyright Vincotech
16
11 Aug. 2022 / Revision 1
10-FY124PA080F2-L589F38
datasheet
Pinout
DC+
18;19;20;37;38;39
T12-a
T14-a
D11
D13
G12-a
26
G14-a
31
T12-b
T14-b
G12-b
28
G14-b
29
S12
27
S14
30
Ph1
21;22;23;24;25
Ph2
32;33;34;35;36
T11-a
T13-a
D12
D14
G11-a
12
G13-a
05
T11-b
T13-b
G11-b
10
G13-b
07
S11
11
S13
06
Rt
DC-1
13;14;16
DC-2
02;03;04
Therm1
09
Therm2
08
Identification
Component
Voltage
Current
Function
Comment
ID
Parallel devices with separate control.
Values apply to complete device.
T11, T12, T13, T14
IGBT
1200 V
1200 V
80 A
50 A
Inverter Switch
D11, D12, D13, D14
Rt
FWD
Inverter Diode
Thermistor
Thermistor
Copyright Vincotech
17
11 Aug. 2022 / Revision 1
10-FY124PA080F2-L589F38
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FY124PA080F2-L589F38-D1-14
11 Aug. 2022
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
11 Aug. 2022 / Revision 1
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