10-FY12M3A015SH01-M743F68 [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;![10-FY12M3A015SH01-M743F68](http://pdffile.icpdf.com/pdf2/p00358/img/icpdf/10-FY12M3A01_2195705_icpdf.jpg)
型号: | 10-FY12M3A015SH01-M743F68 |
厂家: | ![]() |
描述: | Easy paralleling;High speed switching;Low switching losses |
文件: | 总28页 (文件大小:9212K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
10-FY12M3A015SH01-M743F68
datasheet
flow3xMNPC 1
1200 V / 15 A
Topology features
flow 1 12 mm housing
● Three-phase Mixed Voltage Neutral Point Clamped Topology (T-
Type)
● Kelvin Emitter for improved switching performance
● Temperature sensor
Component features
● Easy paralleling
● High speed switching
● Low switching losses
Housing features
● Base isolation: Al2O3
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Solder pin
Schematic
Target applications
● Solar Inverters
● UPS
Types
● 10-FY12M3A015SH01-M743F68
Copyright Vincotech
1
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
1200
21
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Turn off safe operating area
Total power dissipation
Tj = Tjmax
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = 150°C, VCE = 1200 V
Tj = Tjmax
45
A
60
A
Ptot
VGES
tSC
Ts = 80 °C
61
W
V
Gate-emitter voltage
±20
10
Short circuit ratings
VGE = 15 V, VCC = 800 V
Tj = 150 °C
µs
°C
Tjmax
Maximum junction temperature
175
Buck Diode
VRRM
Peak repetitive reverse voltage
650
25
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
43
W
°C
Tjmax
Maximum junction temperature
175
Boost Switch
VCES
Collector-emitter voltage
600
22
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
45
A
Ptot
52
W
V
VGES
Gate-emitter voltage
±20
6
tSC
Short circuit ratings
VGE = 15 V, VCC = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
16
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 25 °C
Ts = 80 °C
IFSM
I2t
65
A
Single Half Sine Wave,
tp = 10 ms
21
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
42
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
8,35
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
3
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0005
15
25
5,3
5,8
6,3
V
25
1,78
1,91
2,29
2,42(1)
15
0
V
150
1200
0
25
25
2
µA
nA
Ω
20
120
None
875
75
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
45
VCC = 960 V
15
15
75
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,55
K/W
25
98,28
97,33
97,58
23,43
27,94
28,47
148,05
187,59
196,17
40,42
66,85
73,46
0,42
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 32 Ω
Rgoff = 32 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
15
tf
125
150
25
ns
QrFWD=0,401 µC
QrFWD=0,813 µC
QrFWD=0,926 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
0,615
0,679
0,411
0,631
0,683
mWs
mWs
Eoff
125
150
Copyright Vincotech
4
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,51
1,43
1,39
1,92(1)
0,94
VF
IR
Forward voltage
15
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,23
K/W
25
6,96
9,32
IRM
Peak recovery current
125
150
25
A
9,78
96,37
141,3
156,82
0,401
0,813
0,926
0,065
0,139
0,161
171,02
114,03
91,93
trr
Reverse recovery time
125
150
25
ns
di/dt=634 A/µs
di/dt=567 A/µs
di/dt=532 A/µs
Qr
Recovered charge
±15
350
15
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
5
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,00021 25
5
5,8
6,5
V
25
15
1,1
1,6
1,9(1)
15
0
V
150
1,85
600
0
25
25
0,85
300
µA
nA
Ω
20
None
800
55
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
24
0/15
0
87
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,83
K/W
25
115,11
113,74
113,26
23,13
26,68
27,32
152,66
174,48
179,22
56,26
86,61
95,07
0,5
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 32 Ω
Rgoff = 32 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
15
tf
125
150
25
ns
QrFWD=0,413 µC
QrFWD=0,916 µC
QrFWD=1,1 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
0,626
0,687
0,415
0,568
0,607
mWs
mWs
Eoff
125
150
Copyright Vincotech
6
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
2,37
2,47
2,71(1)
VF
IR
Forward voltage
15
125
150
25
V
2,77(1)
60
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
900
1800
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,24
K/W
25
11,29
13,69
14,71
132,03
245,19
266,33
0,413
0,916
1,1
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=826 A/µs
di/dt=730 A/µs
di/dt=728 A/µs
Qr
Recovered charge
±15
350
15
125
150
25
μC
0,054
0,165
0,2
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
540,08
353,19
330,25
(dirf/dt)max
125
150
Copyright Vincotech
7
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
40
40
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
30
20
10
30
20
10
0
0
0
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
V
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
15,0
10
12,5
10,0
7,5
0
10
-1
10
5,0
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
1,554
25 °C
Tj:
VCE
=
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,01E-01
2,80E-01
8,28E-01
2,19E-01
1,25E-01
1,83E+00
2,37E-01
5,47E-02
5,24E-03
5,32E-04
Copyright Vincotech
9
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,232
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,05E-01
2,43E-01
1,06E+00
4,77E-01
2,72E-01
7,91E-02
2,52E+00
2,26E-01
5,21E-02
1,22E-02
2,29E-03
4,79E-04
Copyright Vincotech
11
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Boost Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
40
40
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
30
20
10
30
20
10
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)
V
CE(V)
tp
VGE
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Short circuit withstand time as a function of VGE
IC = f(VGE
)
tsc = f(VGE)
15,0
13
12
11
10
9
12,5
10,0
7,5
8
5,0
7
2,5
6
0,0
5
10
0
2
4
6
8
10
12
11
12
13
14
15
16
V
GE(V)
V
GE(V)
tp
=
=
VCE
=
250
10
μs
V
At
600
25
V
25 °C
Tj:
VCE
Tj ≤
150 °C
°C
Copyright Vincotech
12
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Boost Switch Characteristics
figure 12.
IGBT
figure 13.
IGBT
Transient thermal impedance as a function of pulse width
Typical short circuit current as a function of VGE
ISC = f(VGE
)
Zth(j-s) = f(tp)
1
10
275
250
225
200
175
150
125
100
75
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
0
1
2
12
13
14
15
16
17
18
19
20
21
10
10
10
10
10
tp(s)
V
GE(V)
VCE
=
At
400
150
V
D =
tp / T
1,834
Tj ≤
°C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,30E-02
3,76E-01
8,46E-01
2,81E-01
1,16E-01
1,32E-01
1,29E+00
1,56E-01
5,15E-02
8,16E-03
2,04E-03
3,43E-04
figure 14.
IGBT
figure 15.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
17,5
15,0
12,5
10,0
7,5
10µs
10
1
100µs
1ms
10ms
5,0
100ms
DC
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
20
40
60
80
100
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
15
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Boost Diode Characteristics
figure 16.
FWD
figure 17.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,237
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
7,47E-02
1,66E-01
9,90E-01
4,45E-01
3,36E-01
2,26E-01
2,62E+00
3,82E-01
7,20E-02
1,82E-02
3,41E-03
6,98E-04
Copyright Vincotech
14
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Thermistor Characteristics
figure 18.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
15
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Buck Switching Characteristics
figure 19.
IGBT
figure 20.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,0
0,8
0,6
0,4
0,2
0,0
Eon
Eon
Eon
Eon
Eoff
Eoff
Eon
Eoff
Eoff
Eon
Eoff
Eoff
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
32
V
V
Ω
Ω
125 °C
150 °C
350
±15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
32
figure 21.
FWD
figure 22.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
32
V
V
Ω
125 °C
150 °C
350
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
16
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Buck Switching Characteristics
figure 23.
IGBT
figure 24.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
tf
-1
10
-1
10
tf
tr
tr
-2
10
-2
10
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
32
°C
V
150
350
±15
15
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
32
figure 25.
FWD
figure 26.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
32
V
V
Ω
125 °C
150 °C
350
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
17
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Buck Switching Characteristics
figure 27.
FWD
figure 28.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
32
V
V
Ω
125 °C
150 °C
350
±15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 29.
FWD
figure 30.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
15,0
12,5
10,0
7,5
25
20
15
10
5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
2,5
0,0
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
32
V
V
Ω
125 °C
150 °C
350
±15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
18
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Buck Switching Characteristics
figure 31.
FWD
figure 32.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
700
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
600
500
400
300
200
100
0
0
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
32
V
V
Ω
125 °C
150 °C
350
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 33.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
35
IC MAX
30
25
20
15
10
5
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
32
32
Ω
Copyright Vincotech
19
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Boost Switching Characteristics
figure 34.
IGBT
figure 35.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
32
V
V
Ω
Ω
125 °C
150 °C
350
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
32
figure 36.
FWD
figure 37.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,25
0,20
0,15
0,10
0,05
0,00
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
32
V
V
Ω
125 °C
150 °C
350
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
20
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Boost Switching Characteristics
figure 38.
IGBT
figure 39.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
tf
-1
-1
10
10
tf
tr
tr
-2
10
-2
10
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
32
°C
V
150
350
±15
15
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
32
figure 40.
FWD
figure 41.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
32
V
V
Ω
125 °C
150 °C
350
±15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
21
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Boost Switching Characteristics
figure 42.
FWD
figure 43.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
32
V
V
Ω
125 °C
150 °C
350
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 44.
FWD
figure 45.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
17,5
15,0
12,5
10,0
7,5
35
30
25
20
15
10
5
IRM
IRM
IRM
IRM
IRM
IRM
5,0
2,5
0,0
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
32
V
V
Ω
125 °C
150 °C
350
±15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
22
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Boost Switching Characteristics
figure 46.
FWD
figure 47.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
1200
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
1000
800
600
400
200
0
0
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
32
V
V
Ω
125 °C
150 °C
350
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 48.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
35
IC MAX
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
150
32
°C
Ω
Rgon
Rgoff
=
=
32
Ω
Copyright Vincotech
23
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Switching Definitions
figure 49.
IGBT
figure 50.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 51.
IGBT
figure 52.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
24
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Switching Definitions
figure 53.
FWD
figure 54.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
25
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FY12M3A015SH01-M743F68
10-FY12M3A015SH01-M743F68-/7/
10-FY12M3A015SH01-M743F68-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
+DC
GND
G3
52,2
46,2
47
2
0
3
3
4
40,9
44
0
GND
S3
5
3
6
34,9
34,9
28,9
25,9
22,9
22,9
16,9
16,9
10,9
10,9
6
0
-DC
-DC
GND
S7
7
3
8
0
9
2
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
0
GND
G7
3
0
+DC
+DC
GND
G11
GND
S11
-DC
S12
G12
S10
G10
G6
3
0
3
0
7,9
3
0
0
4,75
1,75
13,25
13,25
21,25
21,25
30,4
33,4
40,15
40,15
50,45
50,45
0
8,9
7,9
13,7
10,7
10,7
13,7
9,7
9,7
11,2
8,2
10,7
13,7
16,35
19,35
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
S6
S8
G8
S4
G4
S2
G2
NTC
NTC
OUT3
OUT3
G9
0
5,45
8,25
11,25
14,25
23
S9
S5
26
G5
29
OUT2
OUT2
OUT1
OUT1
G1
31,8
40,4
43,2
46,2
49,2
S1
Copyright Vincotech
26
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Pinout
DC+
12,13
DC+
1
T1
T5
38
T9
D1
D5
D9
35
G9
43
44
G5
S5
G1
S1
S9
36
29
30
37
S2
G2
D2
T2
GND
GND
GND
OUT1
41,42
2,4
D3
5
3
24
23
T3
S3
G3
S6
G6
D6
T6
OUT2
39,40
8,10
D7
9
21
22
T7
S7
G7
S10
G10
11
D10
T10
OUT3
33,34
14,16
D11
17
15
T11
S11
G11
T4
T8
T12
20
D4
D8
D12
28
27
26
25
NTC
G4
S4
G8
S8
G12
S12
19
31
NTC1
32
NTC2
DC-
6,7
18
DC-
Identification
Component
Voltage
Current
Function
Comment
ID
T1, T4, T5, T8, T9, T12
IGBT
1200 V
15 A
Buck Switch
D2, D3, D6, D7, D10,
FWD
IGBT
650 V
600 V
15 A
15 A
15 A
Buck Diode
D11
T3, T2, T7, T6, T11,
Boost Switch
T10
D1, D4, D5, D8, D9,
FWD
1200 V
Boost Diode
Thermistor
D12
NTC
Thermistor
Copyright Vincotech
27
31 Jul. 2022 / Revision 1
10-FY12M3A015SH01-M743F68
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FY12M3A015SH01-M743F68-D1-14
31 Jul. 2022
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
28
31 Jul. 2022 / Revision 1
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00361/img/page/10-FY12PMA01_2209679_files/10-FY12PMA01_2209679_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00361/img/page/10-FY12PMA01_2209679_files/10-FY12PMA01_2209679_2.jpg)
10-FY12PMA015M7-P587A78
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00370/img/page/10-FY12PMA02_2258367_files/10-FY12PMA02_2258367_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00370/img/page/10-FY12PMA02_2258367_files/10-FY12PMA02_2258367_2.jpg)
10-FY12PMA025I7-P588A98
Easy paralleling;Low collector emitter saturation voltage;Low turn-off losses;Positive temperature coefficient
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00367/img/page/10-FY12PMA02_2243150_files/10-FY12PMA02_2243150_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00367/img/page/10-FY12PMA02_2243150_files/10-FY12PMA02_2243150_2.jpg)
10-FY12PMA025M7-P588A78
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-FY12PMA02_2196151_files/10-FY12PMA02_2196151_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-FY12PMA02_2196151_files/10-FY12PMA02_2196151_2.jpg)
10-FY12PMA025M701-P588A788
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-PY12PMA03_2194872_files/10-PY12PMA03_2194872_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-PY12PMA03_2194872_files/10-PY12PMA03_2194872_2.jpg)
10-FY12PMA035M7-P589A78
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00369/img/page/10-FY12PMA05_2252365_files/10-FY12PMA05_2252365_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00369/img/page/10-FY12PMA05_2252365_files/10-FY12PMA05_2252365_2.jpg)
10-FY12PMA050M7-P580A78
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
©2020 ICPDF网 联系我们和版权申明