10-FY12M3A015SH01-M743F68 [VINCOTECH]

Easy paralleling;High speed switching;Low switching losses;
10-FY12M3A015SH01-M743F68
型号: 10-FY12M3A015SH01-M743F68
厂家: VINCOTECH    VINCOTECH
描述:

Easy paralleling;High speed switching;Low switching losses

文件: 总28页 (文件大小:9212K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
10-FY12M3A015SH01-M743F68  
datasheet  
flow3xMNPC 1  
1200 V / 15 A  
Topology features  
flow 1 12 mm housing  
● Three-phase Mixed Voltage Neutral Point Clamped Topology (T-  
Type)  
● Kelvin Emitter for improved switching performance  
● Temperature sensor  
Component features  
● Easy paralleling  
● High speed switching  
● Low switching losses  
Housing features  
● Base isolation: Al2O3  
● Convex shaped substrate for superior thermal contact  
● Thermo-mechanical push-and-pull force relief  
● Solder pin  
Schematic  
Target applications  
● Solar Inverters  
● UPS  
Types  
● 10-FY12M3A015SH01-M743F68  
Copyright Vincotech  
1
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Buck Switch  
VCES  
Collector-emitter voltage  
1200  
21  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Turn off safe operating area  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = 150°C, VCE = 1200 V  
Tj = Tjmax  
45  
A
60  
A
Ptot  
VGES  
tSC  
Ts = 80 °C  
61  
W
V
Gate-emitter voltage  
±20  
10  
Short circuit ratings  
VGE = 15 V, VCC = 800 V  
Tj = 150 °C  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Buck Diode  
VRRM  
Peak repetitive reverse voltage  
650  
25  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
30  
A
Ptot  
43  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Boost Switch  
VCES  
Collector-emitter voltage  
600  
22  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
45  
A
Ptot  
52  
W
V
VGES  
Gate-emitter voltage  
±20  
6
tSC  
Short circuit ratings  
VGE = 15 V, VCC = 360 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
2
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Boost Diode  
VRRM  
Peak repetitive reverse voltage  
1200  
16  
V
A
IF  
Forward current (DC current)  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 25 °C  
Ts = 80 °C  
IFSM  
I2t  
65  
A
Single Half Sine Wave,  
tp = 10 ms  
21  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
42  
Tjmax  
Maximum junction temperature  
175  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
>12,7  
8,35  
V
tp = 1 min  
V
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
≥ 200  
Copyright Vincotech  
3
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Buck Switch  
Static  
VGE(th)  
VCEsat  
ICES  
IGES  
rg  
Gate-emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
VCE = VGE  
0,0005  
15  
25  
5,3  
5,8  
6,3  
V
25  
1,78  
1,91  
2,29  
2,42(1)  
15  
0
V
150  
1200  
0
25  
25  
2
µA  
nA  
Ω
20  
120  
None  
875  
75  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
45  
VCC = 960 V  
15  
15  
75  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,55  
K/W  
25  
98,28  
97,33  
97,58  
23,43  
27,94  
28,47  
148,05  
187,59  
196,17  
40,42  
66,85  
73,46  
0,42  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
Rgon = 32 Ω  
Rgoff = 32 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
±15  
350  
15  
tf  
125  
150  
25  
ns  
QrFWD=0,401 µC  
QrFWD=0,813 µC  
QrFWD=0,926 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
0,615  
0,679  
0,411  
0,631  
0,683  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
4
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Buck Diode  
Static  
25  
1,51  
1,43  
1,39  
1,92(1)  
0,94  
VF  
IR  
Forward voltage  
15  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
2,23  
K/W  
25  
6,96  
9,32  
IRM  
Peak recovery current  
125  
150  
25  
A
9,78  
96,37  
141,3  
156,82  
0,401  
0,813  
0,926  
0,065  
0,139  
0,161  
171,02  
114,03  
91,93  
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=634 A/µs  
di/dt=567 A/µs  
di/dt=532 A/µs  
Qr  
Recovered charge  
±15  
350  
15  
125  
150  
25  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
5
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Switch  
Static  
VGE(th)  
VCEsat  
ICES  
IGES  
rg  
Gate-emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
VCE = VGE  
0,00021 25  
5
5,8  
6,5  
V
25  
15  
1,1  
1,6  
1,9(1)  
15  
0
V
150  
1,85  
600  
0
25  
25  
0,85  
300  
µA  
nA  
Ω
20  
None  
800  
55  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
24  
0/15  
0
87  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,83  
K/W  
25  
115,11  
113,74  
113,26  
23,13  
26,68  
27,32  
152,66  
174,48  
179,22  
56,26  
86,61  
95,07  
0,5  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
Rgon = 32 Ω  
Rgoff = 32 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
±15  
350  
15  
tf  
125  
150  
25  
ns  
QrFWD=0,413 µC  
QrFWD=0,916 µC  
QrFWD=1,1 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
0,626  
0,687  
0,415  
0,568  
0,607  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
6
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Diode  
Static  
25  
2,37  
2,47  
2,71(1)  
VF  
IR  
Forward voltage  
15  
125  
150  
25  
V
2,77(1)  
60  
Reverse leakage current  
Thermal  
Vr = 1200 V  
µA  
150  
900  
1800  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
2,24  
K/W  
25  
11,29  
13,69  
14,71  
132,03  
245,19  
266,33  
0,413  
0,916  
1,1  
IRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=826 A/µs  
di/dt=730 A/µs  
di/dt=728 A/µs  
Qr  
Recovered charge  
±15  
350  
15  
125  
150  
25  
μC  
0,054  
0,165  
0,2  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
540,08  
353,19  
330,25  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
7
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
22  
kΩ  
%
R100 = 1484 Ω  
100  
25  
-5  
5
130  
1,5  
mW  
mW/K  
K
d
25  
B(25/50)  
Tol. ±1 %  
Tol. ±1 %  
3962  
4000  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
I
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
8
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Buck Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
40  
40  
VGE  
:
7 V  
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
30  
20  
10  
30  
20  
10  
0
0
0
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
V
CE(V)  
VCE(V)  
tp  
=
=
tp  
=
250  
15  
μs  
250  
150  
μs  
°C  
25 °C  
Tj:  
VGE  
Tj =  
V
150 °C  
VGE from 7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
1
15,0  
10  
12,5  
10,0  
7,5  
0
10  
-1  
10  
5,0  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
2,5  
-3  
0,0  
0,0  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
2,5  
5,0  
7,5  
10,0  
12,5  
10  
10  
tp(s)  
V
GE(V)  
tp  
=
250  
10  
μs  
V
D =  
tp / T  
1,554  
25 °C  
Tj:  
VCE  
=
150 °C  
Rth(j-s) =  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
1,01E-01  
2,80E-01  
8,28E-01  
2,19E-01  
1,25E-01  
1,83E+00  
2,37E-01  
5,47E-02  
5,24E-03  
5,32E-04  
Copyright Vincotech  
9
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Buck Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
IC = f(VCE  
)
100  
10µs  
10  
1
100µs  
1ms  
10ms  
0,1  
0,01  
100ms  
DC  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
10  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Buck Diode Characteristics  
figure 6.  
FWD  
figure 7.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
40  
30  
20  
10  
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
2,232  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
1,05E-01  
2,43E-01  
1,06E+00  
4,77E-01  
2,72E-01  
7,91E-02  
2,52E+00  
2,26E-01  
5,21E-02  
1,22E-02  
2,29E-03  
4,79E-04  
Copyright Vincotech  
11  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Boost Switch Characteristics  
figure 8.  
IGBT  
figure 9.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
40  
40  
VGE  
:
7 V  
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
30  
20  
10  
30  
20  
10  
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)  
V
CE(V)  
tp  
VGE  
=
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
Tj:  
Tj =  
150 °C  
VGE from 7 V to 17 V in steps of 1 V  
figure 10.  
IGBT  
figure 11.  
IGBT  
Typical transfer characteristics  
Short circuit withstand time as a function of VGE  
IC = f(VGE  
)
tsc = f(VGE)  
15,0  
13  
12  
11  
10  
9
12,5  
10,0  
7,5  
8
5,0  
7
2,5  
6
0,0  
5
10  
0
2
4
6
8
10  
12  
11  
12  
13  
14  
15  
16  
V
GE(V)  
V
GE(V)  
tp  
=
=
VCE  
=
250  
10  
μs  
V
At  
600  
25  
V
25 °C  
Tj:  
VCE  
Tj ≤  
150 °C  
°C  
Copyright Vincotech  
12  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Boost Switch Characteristics  
figure 12.  
IGBT  
figure 13.  
IGBT  
Transient thermal impedance as a function of pulse width  
Typical short circuit current as a function of VGE  
ISC = f(VGE  
)
Zth(j-s) = f(tp)  
1
10  
275  
250  
225  
200  
175  
150  
125  
100  
75  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
0
1
2
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
10  
10  
10  
10  
10  
tp(s)  
V
GE(V)  
VCE  
=
At  
400  
150  
V
D =  
tp / T  
1,834  
Tj ≤  
°C  
Rth(j-s) =  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
8,30E-02  
3,76E-01  
8,46E-01  
2,81E-01  
1,16E-01  
1,32E-01  
1,29E+00  
1,56E-01  
5,15E-02  
8,16E-03  
2,04E-03  
3,43E-04  
figure 14.  
IGBT  
figure 15.  
IGBT  
Safe operating area  
Gate voltage vs gate charge  
IC = f(VCE  
)
VGE = f(Qg)  
100  
17,5  
15,0  
12,5  
10,0  
7,5  
10µs  
10  
1
100µs  
1ms  
10ms  
5,0  
100ms  
DC  
0,1  
0,01  
2,5  
0,0  
1
10  
100  
1000  
10000  
0
20  
40  
60  
80  
100  
V
CE(V)  
Qg(μC)  
D =  
IC  
=
single pulse  
15  
25  
A
Ts =  
Tj =  
80  
15  
°C  
V
°C  
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
13  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Boost Diode Characteristics  
figure 16.  
FWD  
figure 17.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
40  
30  
20  
10  
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0
1
2
3
4
5
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
2,237  
25 °C  
Tj:  
125 °C  
Rth(j-s) =  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
7,47E-02  
1,66E-01  
9,90E-01  
4,45E-01  
3,36E-01  
2,26E-01  
2,62E+00  
3,82E-01  
7,20E-02  
1,82E-02  
3,41E-03  
6,98E-04  
Copyright Vincotech  
14  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Thermistor Characteristics  
figure 18.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
25000  
20000  
15000  
10000  
5000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
15  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Buck Switching Characteristics  
figure 19.  
IGBT  
figure 20.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eon  
Eoff  
Eoff  
Eon  
Eoff  
Eoff  
0
5
10  
15  
20  
25  
30  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
32  
V
V
Ω
Ω
125 °C  
150 °C  
350  
±15  
15  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Rgon  
Rgoff  
32  
figure 21.  
FWD  
figure 22.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
0,225  
0,200  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
5
10  
15  
20  
25  
30  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
32  
V
V
Ω
125 °C  
150 °C  
350  
±15  
15  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
16  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Buck Switching Characteristics  
figure 23.  
IGBT  
figure 24.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(off)  
td(on)  
td(off)  
td(on)  
tf  
-1  
10  
-1  
10  
tf  
tr  
tr  
-2  
10  
-2  
10  
0
5
10  
15  
20  
25  
30  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
350  
±15  
32  
°C  
V
150  
350  
±15  
15  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
32  
figure 25.  
FWD  
figure 26.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,225  
0,200  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,225  
0,200  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
5
10  
15  
20  
25  
30  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
32  
V
V
Ω
125 °C  
150 °C  
350  
±15  
15  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
17  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Buck Switching Characteristics  
figure 27.  
FWD  
figure 28.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,2  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
5
10  
15  
20  
25  
30  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
32  
V
V
Ω
125 °C  
150 °C  
350  
±15  
15  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
figure 29.  
FWD  
figure 30.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
15,0  
12,5  
10,0  
7,5  
25  
20  
15  
10  
5
IRM  
IRM  
IRM  
5,0  
IRM  
IRM  
IRM  
2,5  
0,0  
0
0
5
10  
15  
20  
25  
30  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
32  
V
V
Ω
125 °C  
150 °C  
350  
±15  
15  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
18  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Buck Switching Characteristics  
figure 31.  
FWD  
figure 32.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
700  
2500  
2000  
1500  
1000  
500  
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
600  
500  
400  
300  
200  
100  
0
0
0
5
10  
15  
20  
25  
30  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
32  
V
V
Ω
125 °C  
150 °C  
350  
±15  
15  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 33.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
35  
IC MAX  
30  
25  
20  
15  
10  
5
0
0
250  
500  
750  
1000  
1250  
1500  
V
CE(V)  
Tj =  
At  
150  
°C  
Ω
Rgon  
Rgoff  
=
=
32  
32  
Ω
Copyright Vincotech  
19  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Boost Switching Characteristics  
figure 34.  
IGBT  
figure 35.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
0
5
10  
15  
20  
25  
30  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
32  
V
V
Ω
Ω
125 °C  
150 °C  
350  
±15  
15  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
32  
figure 36.  
FWD  
figure 37.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
5
10  
15  
20  
25  
30  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
32  
V
V
Ω
125 °C  
150 °C  
350  
±15  
15  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
20  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Boost Switching Characteristics  
figure 38.  
IGBT  
figure 39.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(off)  
td(on)  
td(off)  
td(on)  
tf  
-1  
-1  
10  
10  
tf  
tr  
tr  
-2  
10  
-2  
10  
0
5
10  
15  
20  
25  
30  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
350  
±15  
32  
°C  
V
150  
350  
±15  
15  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
32  
figure 40.  
FWD  
figure 41.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,40  
0,35  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
trr  
trr  
trr  
trr  
trr  
trr  
0
5
10  
15  
20  
25  
30  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
32  
V
V
Ω
125 °C  
150 °C  
350  
±15  
15  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
21  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Boost Switching Characteristics  
figure 42.  
FWD  
figure 43.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
5
10  
15  
20  
25  
30  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
32  
V
V
Ω
125 °C  
150 °C  
350  
±15  
15  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 44.  
FWD  
figure 45.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
17,5  
15,0  
12,5  
10,0  
7,5  
35  
30  
25  
20  
15  
10  
5
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
5,0  
2,5  
0,0  
0
0
5
10  
15  
20  
25  
30  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
32  
V
V
Ω
125 °C  
150 °C  
350  
±15  
15  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
22  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Boost Switching Characteristics  
figure 46.  
FWD  
figure 47.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
1200  
3500  
3000  
2500  
2000  
1500  
1000  
500  
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
1000  
800  
600  
400  
200  
0
0
0
5
10  
15  
20  
25  
30  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
32  
V
V
Ω
125 °C  
150 °C  
350  
±15  
15  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 48.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
35  
IC MAX  
30  
25  
20  
15  
10  
5
0
0
100  
200  
300  
400  
500  
600  
700  
V
CE(V)  
Tj =  
At  
150  
32  
°C  
Ω
Rgon  
Rgoff  
=
=
32  
Ω
Copyright Vincotech  
23  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Switching Definitions  
figure 49.  
IGBT  
figure 50.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 51.  
IGBT  
figure 52.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
24  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Switching Definitions  
figure 53.  
FWD  
figure 54.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
25  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Ordering Code  
Version  
Ordering Code  
Without thermal paste  
10-FY12M3A015SH01-M743F68  
10-FY12M3A015SH01-M743F68-/7/  
10-FY12M3A015SH01-M743F68-/3/  
With thermal paste (5,2 W/mK, PTM6000HV)  
With thermal paste (3,4 W/mK, PSX-P7)  
Marking  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
0
Function  
+DC  
GND  
G3  
52,2  
46,2  
47  
2
0
3
3
4
40,9  
44  
0
GND  
S3  
5
3
6
34,9  
34,9  
28,9  
25,9  
22,9  
22,9  
16,9  
16,9  
10,9  
10,9  
6
0
-DC  
-DC  
GND  
S7  
7
3
8
0
9
2
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
0
GND  
G7  
3
0
+DC  
+DC  
GND  
G11  
GND  
S11  
-DC  
S12  
G12  
S10  
G10  
G6  
3
0
3
0
7,9  
3
0
0
4,75  
1,75  
13,25  
13,25  
21,25  
21,25  
30,4  
33,4  
40,15  
40,15  
50,45  
50,45  
0
8,9  
7,9  
13,7  
10,7  
10,7  
13,7  
9,7  
9,7  
11,2  
8,2  
10,7  
13,7  
16,35  
19,35  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
S6  
S8  
G8  
S4  
G4  
S2  
G2  
NTC  
NTC  
OUT3  
OUT3  
G9  
0
5,45  
8,25  
11,25  
14,25  
23  
S9  
S5  
26  
G5  
29  
OUT2  
OUT2  
OUT1  
OUT1  
G1  
31,8  
40,4  
43,2  
46,2  
49,2  
S1  
Copyright Vincotech  
26  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Pinout  
DC+  
12,13  
DC+  
1
T1  
T5  
38  
T9  
D1  
D5  
D9  
35  
G9  
43  
44  
G5  
S5  
G1  
S1  
S9  
36  
29  
30  
37  
S2  
G2  
D2  
T2  
GND  
GND  
GND  
OUT1  
41,42  
2,4  
D3  
5
3
24  
23  
T3  
S3  
G3  
S6  
G6  
D6  
T6  
OUT2  
39,40  
8,10  
D7  
9
21  
22  
T7  
S7  
G7  
S10  
G10  
11  
D10  
T10  
OUT3  
33,34  
14,16  
D11  
17  
15  
T11  
S11  
G11  
T4  
T8  
T12  
20  
D4  
D8  
D12  
28  
27  
26  
25  
NTC  
G4  
S4  
G8  
S8  
G12  
S12  
19  
31  
NTC1  
32  
NTC2  
DC-  
6,7  
18  
DC-  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T1, T4, T5, T8, T9, T12  
IGBT  
1200 V  
15 A  
Buck Switch  
D2, D3, D6, D7, D10,  
FWD  
IGBT  
650 V  
600 V  
15 A  
15 A  
15 A  
Buck Diode  
D11  
T3, T2, T7, T6, T11,  
Boost Switch  
T10  
D1, D4, D5, D8, D9,  
FWD  
1200 V  
Boost Diode  
Thermistor  
D12  
NTC  
Thermistor  
Copyright Vincotech  
27  
31 Jul. 2022 / Revision 1  
10-FY12M3A015SH01-M743F68  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 1 packages see vincotech.com website.  
Package data  
Package data for flow 1 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-FY12M3A015SH01-M743F68-D1-14  
31 Jul. 2022  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
28  
31 Jul. 2022 / Revision 1  

相关型号:

10-FY12M3A025SH-M746F08

Easy paralleling;High speed switching;Low switching losses
VINCOTECH

10-FY12NMA160SH-M420F

Common collector neutral connection
VINCOTECH

10-FY12NMA160SH-M420F-3

Common collector neutral connection
VINCOTECH

10-FY12NMA160SH01-M820F18

Easy paralleling;High speed switching;Low switching losses
VINCOTECH

10-FY12NMA160SH09-M820F98

Easy paralleling;High speed switching;Low switching losses
VINCOTECH

10-FY12PMA015M7-P587A78

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH

10-FY12PMA025I7-P588A98

Easy paralleling;Low collector emitter saturation voltage;Low turn-off losses;Positive temperature coefficient
VINCOTECH

10-FY12PMA025M7-P588A78

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH

10-FY12PMA025M701-P588A788

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH

10-FY12PMA025SH01-P589A81

Easy paralleling;High speed switching;Low switching losses
VINCOTECH

10-FY12PMA035M7-P589A78

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH

10-FY12PMA050M7-P580A78

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH